scholarly journals Modeling of Thermal, Electronic, Hydrodynamic, and Dynamic Deposition Processes for Pulsed-Laser Deposition of Thin Films

1994 ◽  
Vol 354 ◽  
Author(s):  
C. L. Liu ◽  
J. N. Leboeuf ◽  
R. F. Wood ◽  
D. B. Geohegan ◽  
J. M. Donate ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Cell Model ◽  
Pulsed Laser ◽  
Nonequilibrium Thermodynamic ◽  
Laser Deposition ◽  
Computational Techniques ◽  
Special Focus ◽  
Rapid Phase

AbstractVarious physical processes during laser ablation of solids for pulsed-laser deposition (PLD) are studied using a variety of computational techniques. In the course of our combined theoretical and experimental effort, we have been trying to work on as many aspects of PLD processes as possible, but with special focus on the following areas: (a) the effects of collisional interactions between the particles in the plume and in the background on the evolving flow field and on thin film growth, (b) interactions between the energetic particles and the growing thin films and their effects on film quality, (c) rapid phase transformations through the liquid and vapor phases under possibly nonequilibrium thermodynamic conditions induced by laser-solid interactions, (d) breakdown of the vapor into a plasma in the early stages of ablation through both electronic and photoionization processes, (c) hydrodynamic behavior of the vapor/plasma during and after ablation. The computational techniques used include finite difference (FD) methods, particle-in-cell model, and atomistic simulations using molecular dynamics (MD) techniques.

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Sapphire Substrates

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
T.W. Noh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Narrow Range ◽  
Pulsed Laser ◽  
Growth Behavior ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Deposition Parameters

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

scholarly journals Challenges for Pulsed Laser Deposition of FeSe Thin Films

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1224
Author(s):  
Yukiko Obata ◽  
Igor A. Karateev ◽  
Ivan Pavlov ◽  
Alexander L. Vasiliev ◽  
Silvia Haindl
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Mechanical Strain ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Properties ◽  
Surface Protection ◽  
Sensor Applications ◽  
Interface Control

Anti-PbO-type FeSe shows an advantageous dependence of its superconducting properties with mechanical strain, which could be utilized as future sensor functionality. Although superconducting FeSe thin films can be grown by various methods, ultrathin films needed in potential sensor applications were only achieved on a few occasions. In pulsed laser deposition, the main challenges can be attributed to such factors as controlling film stoichiometry (i.e., volatile elements during the growth), nucleation, and bonding to the substrate (i.e., film/substrate interface control) and preventing the deterioration of superconducting properties (i.e., by surface oxidization). In the present study, we address various technical issues in thin film growth of FeSe by pulsed laser deposition, which pose constraints in engineering and reduce the application potential for FeSe thin films in sensor devices. The results indicate the need for sophisticated engineering protocols that include interface control and surface protection from chemical deterioration. This work provides important actual limitations for pulsed laser deposition (PLD) of FeSe thin films with the thicknesses below 30 nm.

A Comparative Characterization Study of Molybdenum Oxide Thin Films Grown Using Femtosecond and Nanosecond Pulsed Laser Deposition

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2585-2590 ◽  
Author(s):  
Harsha K. Puppala ◽  
Anthony T. Pelton ◽  
Robert A. Mayanovic
Keyword(s):  
Thin Films ◽  
Heterogeneous Catalysis ◽  
Pulsed Laser Deposition ◽  
Molybdenum Oxide ◽  
Film Growth ◽  
Growth Models ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
Oxide Thin Films

ABSTRACTGroup 6 transition metal oxide thin films are in large demand for photocatalysis, heterogeneous catalysis, fuel cell, battery and electronic applications. Pulsed laser deposition offers an inexpensive method for the preparation of nanostructured thin films that may be suitable for heterogeneous catalysis. We have synthesized molybdenum oxide thin films using two types of pulsed laser deposition (PLD). The first method utilizes femtosecond laser-based PLD (f-PLD) while the second method uses an excimer (nanosecond) laser-based PLD (n-PLD). The PLD films have been deposited using f-PLD and, separately, n-PLD on glass and silicon substrates and subsequently annealed to 450 °C for up to 20 hours in air using a Linkam stage. SEM, XRD and Raman spectroscopic characterization shows that the f-PLD films are substantially more textured and partially crystalline prior to annealing whereas the n-PLD-grown thin films are much smoother and predominantly amorphous. A 3-dimensional nano-crystalline structure is evident in the post-annealed f-PLD synthesized thin films, which is desirable for catalytic applications. XPS elemental analysis shows that the stoichiometry of the f-PLD and n-PLD thin films is consistent with the presence of MoO2 and MoO3. Our results are discussed in terms of thin film growth models suitable for f-PLD vs n-PLD.

Structure and Properties Of III-N Semiconductor Thin Films Grown at Low Temperatures by N-Radical-Assisted Pulsed Laser Deposition

1997 ◽  
Vol 482 ◽  
Author(s):  
F. E. Fernandez ◽  
M. Pumarol ◽  
A. Martinez ◽  
V. Pantojas ◽  
M. Garcia
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitride Semiconductors ◽  
Semiconductor Thin Films ◽  
Substrate Temperatures ◽  
Growth Methods ◽  
Gan Film

AbstractThin films of nitride semiconductors are usually grown by means requiring high substrate temperatures. Deposition techniques providing higher kinetic energies of incident species offer an alternative route which might allow growth of good quality films at lower temperatures. Pulsed Laser Deposition can provide higher kinetic energies than most thin film growth methods. However, III-nitride thin films grown by PLD are often nitrogen deficient. We have been able to obtain good stoichiometry for aluminum nitride films even at room temperature by providing atomic nitrogen at low (thermal) energies during growth. Very good orientation can be obtained on (001) sapphire substrates at moderate temperatures (∼ 500 C). AIN films were grown from either AIN or Al targets. We also report on preliminary work by the same method with GaN film growth from a liquid Ga target.

Pulsed Laser Deposition

MRS Bulletin ◽  
1992 ◽  
Vol 17 (2) ◽  
pp. 26-29 ◽  
Author(s):  
Graham K. Hubler
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
High Temperature Superconductivity ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Original Research ◽  
High Quality ◽  
Binary Compounds

Research on materials grown by pulsed laser deposition, or PLD, has experienced phenomenal growth since late 1987 when T. Venkatesan (one of the authors for this issue) and co-workers pointed out that extreme nonequilibrium conditions created by pulsed laser melting of YBaCuO allowed in-situ preparation of thin films of this high transition temperature (Tc) superconducting material. Since then, PLD has emerged as the primary means for high throughput deposition of high-quality superconducting thin films for research and devices. This probably came as no surprise to J.T. Cheung (another of this issue's authors), who performed original research in this area and tirelessly labored during the 1980s to convince a skeptical audience of the advantages of PLD.Along with the success of PLD in the arena of high-temperature superconductivity, however, is the explosion of activity in the deposition of many other materials, made possible by the unique features of pulsed laser deposition, materials previously not amenable to in-situ thin film growth. Creative minds reasoned that since PLD can deposit a demanding, complex material such as the perovskite structure Y1Ba2Cu3O7-δ, why not other perovskites or multicomponent oxide materials? It also turns out that the range of properties of multicomponent oxides is virtually limitless. They can be metallic, insulating, semiconducting, biocompatable, superconducting, ferroelectric, piezoelectric, and so on. One is not limited to the properties of elements or binary compounds on which the electronics and microelectronics industries are based. Indeed, in a recent review of hybrid ferromagnetic- semiconductor structures, G. Prinz states, “… there has been little work devoted to incorporating magnetic materials into planar integrated electronic (or photonic) circuitry there are potential applications that have no analog in vacuum electronics but that remain unrealized, awaiting the development of appropriate materials and processing procedures.” In pulsed laser deposition, we may well have in hand the “appropriate processing procedure” to deposit sequential epitaxial layers of high quality materials that possess profoundly different properties.

scholarly journals Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa2O4 Films by Pulsed Laser Deposition

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 782
Author(s):  
Liu Wang ◽  
Wenrui Zhang ◽  
Ningtao Liu ◽  
Tan Zhang ◽  
Zilong Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Pulsed Laser Deposition ◽  
High Performance ◽  
Film Growth ◽  
Growth Parameters ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Stoichiometry Control ◽  
Ultraviolet Photodetectors

ZnGa2O4 is a promising semiconductor for developing high-performance deep-ultraviolet photodetectors owing to a number of advantageous fundamental characteristics. However, Zn volatilization during the ZnGa2O4 growth is a widely recognized problem that seriously degrades the film quality and the device performance. In this study, we report the synthesis of epitaxial ZnGa2O4 thin films by pulsed laser deposition using a non-stoichiometric Zn1+xGa2O4 target. It is found that supplementing excessive Zn concentration from the target is highly effective to stabilize stochiometric ZnGa2O4 thin films during the PLD growth. The influence of various growth parameters on the phase formation, crystallinity and surface morphology is systematically investigated. The film growth behavior further impacts the resulting optical absorption and thermal conductivity. The optimized epitaxial ZnGa2O4 film exhibits a full width at half maximum value of 0.6 degree for a 120 nm thickness, a surface roughness of 0.223 nm, a band gap of 4.79 eV and a room-temperature thermal conductivity of 40.137 W/(m⋅K). This study provides insights into synthesizing epitaxial ZnGa2O4 films for high performance optoelectronic devices.

Evolution and Dynamics of Excimer Laser Vaporized YBa2Cu3O7−δ

1992 ◽  
Vol 285 ◽  
Author(s):  
R. C. Dye ◽  
R. Brainard ◽  
S. R. Foltyn ◽  
R. E. Muenchausen ◽  
X. D. Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Excimer Laser ◽  
Film Growth ◽  
Pulsed Laser ◽  
Spot Size ◽  
Laser Deposition ◽  
Time Resolved ◽  
Plume Dynamics ◽  
Time Resolved Imaging

ABSTRACTPulsed laser deposition of thin films is a technology whose fundamental processes are often poorly understood. Because of the difficulty of monitoring in real time either the ablation process itself (the laser-solid interaction), or thin film growth (plume-substrate interaction), studies have largely relied on diagnostic studies of the ablated plume and the resulting film to infer details about other steps in the process. Information gained from this approach has helped improve the production of high-temperature superconducting thin films.We have studied plume dynamics during the in-situ pulsed laser deposition of YBa2Cu3O7−δ thin films. The 248 and 308 nm lines of an excimer laser were used to generate a plume from a bulk YBa2Cu3O7−δ target. Both fast intensified CCD imaging and spectral diagnostics were used to monitor plume dynamics. Variations in the plume distribution as a function of processing gas, pressure, fluence, energy, and spot size were monitored by film composition and spectral-and time-resolved imaging.

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes
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