A Comparative Characterization Study of Molybdenum Oxide Thin Films Grown Using Femtosecond and Nanosecond Pulsed Laser Deposition

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2585-2590 ◽  
Author(s):  
Harsha K. Puppala ◽  
Anthony T. Pelton ◽  
Robert A. Mayanovic

ABSTRACTGroup 6 transition metal oxide thin films are in large demand for photocatalysis, heterogeneous catalysis, fuel cell, battery and electronic applications. Pulsed laser deposition offers an inexpensive method for the preparation of nanostructured thin films that may be suitable for heterogeneous catalysis. We have synthesized molybdenum oxide thin films using two types of pulsed laser deposition (PLD). The first method utilizes femtosecond laser-based PLD (f-PLD) while the second method uses an excimer (nanosecond) laser-based PLD (n-PLD). The PLD films have been deposited using f-PLD and, separately, n-PLD on glass and silicon substrates and subsequently annealed to 450 °C for up to 20 hours in air using a Linkam stage. SEM, XRD and Raman spectroscopic characterization shows that the f-PLD films are substantially more textured and partially crystalline prior to annealing whereas the n-PLD-grown thin films are much smoother and predominantly amorphous. A 3-dimensional nano-crystalline structure is evident in the post-annealed f-PLD synthesized thin films, which is desirable for catalytic applications. XPS elemental analysis shows that the stoichiometry of the f-PLD and n-PLD thin films is consistent with the presence of MoO2 and MoO3. Our results are discussed in terms of thin film growth models suitable for f-PLD vs n-PLD.

2009 ◽  
Vol 98 (3) ◽  
pp. 609-615 ◽  
Author(s):  
M. F. Al-Kuhaili ◽  
S. M. A. Durrani ◽  
I. A. Bakhtiari

Vacuum ◽  
2021 ◽  
Vol 194 ◽  
pp. 110613
Author(s):  
Jakub Holovský ◽  
Eva Horynová ◽  
Lukáš Horák ◽  
Katarína Ridzoňová ◽  
Zdeněk Remeš ◽  
...  

2021 ◽  
pp. 126323
Author(s):  
Joseph A. De Mesa ◽  
Angelo P. Rillera ◽  
Melvin John F. Empizo ◽  
Nobuhiko Sarukura ◽  
Roland V. Sarmago ◽  
...  

1996 ◽  
Vol 69 (14) ◽  
pp. 2027-2029 ◽  
Author(s):  
M. A. El Khakani ◽  
M. Chaker ◽  
E. Gat

1996 ◽  
Vol 4 (4) ◽  
pp. 347 ◽  
Author(s):  
G. A. Hirata ◽  
J. McKittrick ◽  
L. E. Shea ◽  
O. A. Lopez ◽  
M. Avalos-Borja

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.


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