Structure and Properties Of III-N Semiconductor Thin Films Grown at Low Temperatures by N-Radical-Assisted Pulsed Laser Deposition

1997 ◽  
Vol 482 ◽  
Author(s):  
F. E. Fernandez ◽  
M. Pumarol ◽  
A. Martinez ◽  
V. Pantojas ◽  
M. Garcia
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitride Semiconductors ◽  
Semiconductor Thin Films ◽  
Substrate Temperatures ◽  
Growth Methods ◽  
Gan Film

AbstractThin films of nitride semiconductors are usually grown by means requiring high substrate temperatures. Deposition techniques providing higher kinetic energies of incident species offer an alternative route which might allow growth of good quality films at lower temperatures. Pulsed Laser Deposition can provide higher kinetic energies than most thin film growth methods. However, III-nitride thin films grown by PLD are often nitrogen deficient. We have been able to obtain good stoichiometry for aluminum nitride films even at room temperature by providing atomic nitrogen at low (thermal) energies during growth. Very good orientation can be obtained on (001) sapphire substrates at moderate temperatures (∼ 500 C). AIN films were grown from either AIN or Al targets. We also report on preliminary work by the same method with GaN film growth from a liquid Ga target.

scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

P-Type II-VI Compound Semiconductor Thin Films Grown by Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
W. P. Shen ◽  
H. S. Kwok
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Type Ii ◽  
New Approach ◽  
Li Doping ◽  
Semiconductor Thin Films ◽  
In Doping ◽  
P Type

AbstractIn this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Sapphire Substrates

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
T.W. Noh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Narrow Range ◽  
Pulsed Laser ◽  
Growth Behavior ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Deposition Parameters

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

Pulsed laser deposition of wide-bandgap semiconductor thin films

2003 ◽  
Author(s):  
Donagh O'Mahony ◽  
Eduardo de Posada ◽  
James G. Lunney ◽  
Jean-Paul Mosnier ◽  
Enda McGlynn
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Wide Bandgap ◽  
Laser Deposition ◽  
Wide Bandgap Semiconductor ◽  
Semiconductor Thin Films

scholarly journals Modeling of Thermal, Electronic, Hydrodynamic, and Dynamic Deposition Processes for Pulsed-Laser Deposition of Thin Films

1994 ◽  
Vol 354 ◽  
Author(s):  
C. L. Liu ◽  
J. N. Leboeuf ◽  
R. F. Wood ◽  
D. B. Geohegan ◽  
J. M. Donate ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Cell Model ◽  
Pulsed Laser ◽  
Nonequilibrium Thermodynamic ◽  
Laser Deposition ◽  
Computational Techniques ◽  
Special Focus ◽  
Rapid Phase

AbstractVarious physical processes during laser ablation of solids for pulsed-laser deposition (PLD) are studied using a variety of computational techniques. In the course of our combined theoretical and experimental effort, we have been trying to work on as many aspects of PLD processes as possible, but with special focus on the following areas: (a) the effects of collisional interactions between the particles in the plume and in the background on the evolving flow field and on thin film growth, (b) interactions between the energetic particles and the growing thin films and their effects on film quality, (c) rapid phase transformations through the liquid and vapor phases under possibly nonequilibrium thermodynamic conditions induced by laser-solid interactions, (d) breakdown of the vapor into a plasma in the early stages of ablation through both electronic and photoionization processes, (c) hydrodynamic behavior of the vapor/plasma during and after ablation. The computational techniques used include finite difference (FD) methods, particle-in-cell model, and atomistic simulations using molecular dynamics (MD) techniques.

scholarly journals Challenges for Pulsed Laser Deposition of FeSe Thin Films

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1224
Author(s):  
Yukiko Obata ◽  
Igor A. Karateev ◽  
Ivan Pavlov ◽  
Alexander L. Vasiliev ◽  
Silvia Haindl
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Mechanical Strain ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Properties ◽  
Surface Protection ◽  
Sensor Applications ◽  
Interface Control

Anti-PbO-type FeSe shows an advantageous dependence of its superconducting properties with mechanical strain, which could be utilized as future sensor functionality. Although superconducting FeSe thin films can be grown by various methods, ultrathin films needed in potential sensor applications were only achieved on a few occasions. In pulsed laser deposition, the main challenges can be attributed to such factors as controlling film stoichiometry (i.e., volatile elements during the growth), nucleation, and bonding to the substrate (i.e., film/substrate interface control) and preventing the deterioration of superconducting properties (i.e., by surface oxidization). In the present study, we address various technical issues in thin film growth of FeSe by pulsed laser deposition, which pose constraints in engineering and reduce the application potential for FeSe thin films in sensor devices. The results indicate the need for sophisticated engineering protocols that include interface control and surface protection from chemical deterioration. This work provides important actual limitations for pulsed laser deposition (PLD) of FeSe thin films with the thicknesses below 30 nm.

Pulsed Laser Deposition of High Quality ZnO Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
S. Amirhaghi ◽  
V. Craciun ◽  
F. Beech ◽  
M. Vickers ◽  
S. Tarling ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Visible Region ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Krf Excimer Laser ◽  
Substrate Temperatures ◽  
532 Nm

ABSTRACTThin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

Influence of Substrate Temperature in Plasma Assisted Pulsed Laser Deposition of Hydroxyapatite Thin Films

2006 ◽  
Vol 514-516 ◽  
pp. 1029-1033
Author(s):  
Eugenio Luís Solla ◽  
Jacinto P. Borrajo ◽  
Pio González ◽  
Julia Serra ◽  
Stefano Chiussi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Rf Discharge ◽  
Rf Plasma ◽  
X Ray Diffraction ◽  
Influence Of Substrate ◽  
Substrate Temperatures

The bioactive properties of hydroxyapatite (HA) are well known in the implant industry and coatings of HA have been used to enhance the adhesion of living tissue to metal prostheses. Pulsed laser deposition (PLD) in a water vapour atmosphere is an appropriate method for the production of crystalline HA coatings. In this work the effect of RF plasma on thin films of HA grown by PLD at different substrate temperatures has been studied. The physicochemical properties of the films were studied by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS), showing that the incorporation of RF discharge in the deposition chamber can lead to changes in the crystallinity and deposition rate of the films but substrate temperature still plays the most important role.

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