Characteristics of Excimer-Laser-Crystallized Polysilicon Films by Line Beam Scanning Method

1994 ◽  
Vol 354 ◽  
Author(s):  
Young Min Jhon ◽  
Dong Hwan Kim ◽  
Hong Chu ◽  
Chang Woo Lee ◽  
Sang Sam Choi
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
Scanning Method ◽  
Gaussian Profile ◽  
Polysilicon Films ◽  
Amorphous States

AbstractCharacteristics of polysilicon films, crystallized by excimer laser annealing, have been investigated. The entire amorphous silicon film of 50 mm X 50 mm has been crystallized by scanning a line shape excimer laser beam, which basically reduces the nonuniformity in the beam overlap region of the 2-dimensional scanning method. The laser beam had a Gaussian profile in the scanning direction, which ensured good crystallization by the reversible transitions between the crystalline and amorphous states and was expected to give step annealing effect The laser energy density and substrate temperature were varied.

The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Effects of Excimer Laser Annealing Process on the Ni-Sputtered Amorphous Silicon Film

2010 ◽  
Vol 13 (10) ◽  
pp. H346 ◽  
Author(s):  
Moojin Kim ◽  
GuangHai Jin ◽  
Hoonkee Min ◽  
HoKyoon Chung ◽  
Sangsoo Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Annealing Process ◽  
Excimer Laser Annealing ◽  
Amorphous Silicon Film

Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si

2003 ◽  
Vol 765 ◽  
Author(s):  
G. Fortunato ◽  
L. Mariucci ◽  
V. Privitera ◽  
A. La Magna ◽  
S. Whelan ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Pulses ◽  
Low Energy ◽  
Excimer Laser Annealing ◽  
High Resolution Tem ◽  
Ultra Shallow Junctions ◽  
Dopant Redistribution ◽  
Melt Duration

AbstractFormation of ultra-shallow junctions by excimer laser annealing (ELA) of ultra-low energy (1keV –250 eV) B implanted in Si has been investigated. High resolution TEM has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been studied as a function of the laser energy density (melt depth), the implant dose and the number of laser pulses (melt duration). Under appropriate ELA conditions, ultra-shallow profiles, extending to a depth as low as 35 nm with an abrupt profile (2.5 nm/dec), have been achieved. A significant amount of the implanted dopant was lost from the sample following ELA. However, the dopant that was retained in crystal material was fully activated following rapid re-solidification. We developed a theoretical model, that considers the dopant redistribution during melting and regrowth, showing that the fraction of the implanted dopant not activated during ELA was lost from the sample through out diffusion. The lateral distribution of the implanted B following laser annealing has been studied with 2-D measurements, using selective etching and cross-section TEM on samples where the implanted dopant was confined by using test structures including windows opened in silicon dioxide masks and patterned gate stack structures.

Fast-Pulse Excimer-Laser-Induced Processes in a-Si:H

1989 ◽  
Vol 164 ◽  
Author(s):  
K. Winer ◽  
R.Z. Bachrach ◽  
R.I. Johnson ◽  
S.E. Ready ◽  
G.B. Anderson ◽  
...  
Keyword(s):  
Energy Density ◽  
Excimer Laser ◽  
Impurity Concentration ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Excimer Laser Annealing ◽  
Near Surface ◽  
Pulse Excimer Laser ◽  
Fast Pulse

AbstractThe effects of fast-pulse excimer laser annealing of a-Si:H were investigated by measurements of electronic transport properties and impurity concentration depth profiles as a function of incident laser energy density. The dc dark conductivity of laser-annealed, highly-doped a-Si:H increases by a factor of ∼350 above a sharp laser energy density threshold whose magnitude increases with decreasing impurity concentration and which correlates with the onset of hydrogen evolution from and crystallization of the near-surface layer. The similarities between the preparation and properties of laser-crystallized a-Si:H and pc-Si:H are discussed.

Melting and resolidification dynamics of a-Si and poly-Si thin films during excimer laser annealing

1999 ◽  
Vol 558 ◽  
Author(s):  
Mutsuko Hatano ◽  
Seungjae Moon ◽  
Minghong Lee ◽  
Kenkichi Suzuki ◽  
Costas P. Grigoropoulos
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Electrical Conductance ◽  
Temperature History ◽  
Maximum Temperature ◽  
Excimer Laser Annealing ◽  
Complete Melting ◽  
In Situ Experiments ◽  
Melting Regime

ABSTRACTThe liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in-situ experiments combining time-resolved (∼Ins) electrical conductance, optical reflectance/transmittance at visible and near-IR wavelength, and thermal emission measurements. The existence of partial and complete melting regimes is elucidated. In the partial melting regime, the maximum temperature remains close to the melting point of aSi, since the laser energy is consumed on the latent heat of phase-change. In the complete melting regime, substantial supercooling, followed by homogeneous nucleation is observed. These phase transformations are consistent with the recrystallized poly-Si morphologies.

2-Dimensional Controlled Large Lateral Grain Growth on the Floating Amorphous Silicon Film by Excimer Laser Recrystallization

2003 ◽  
Vol 762 ◽  
Author(s):  
In-Hyuk Song ◽  
Su-Hyuk Kang ◽  
Woo-Jin Nam ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Excimer Laser ◽  
Thermal Gradient ◽  
Laser Annealing ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
Active Structure ◽  
Current Path ◽  
Laser Recrystallization

AbstractWe have successfully obtained large lateral grains with well-controlled grain boundary. The proposed excimer laser annealing (ELA) method produces 2-dimensionally controlled grain growth because the temperature gradient is induced in two directions. Along the channel direction, the floating active structure produces large thermal gradient due to very low thermal conductivity of the air-gap. Along the perpendicular direction to the channel, the surface tension effect also produces thermal gradient. The proposed ELA method can control the grain boundary perpendicular and parallel to current path with only one laser irradiation.

Observation and Annealing of Incomplete Recrystallized Junction Defects due to the Excimer Laser Beam Diffraction at the Gate Edge in Poly-Si TFT

2003 ◽  
Vol 762 ◽  
Author(s):  
Woo-Jin Nam ◽  
Kee-Chan Park ◽  
Sang-Hoon Jung ◽  
Soo-Jeong Park ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Irradiation Intensity ◽  
Transmission Electron ◽  
Electrode Edge ◽  
Beam Diffraction ◽  
Annealing Method

AbstractIncomplete recrystallized junction defects of self-aligned, excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). TEM observation and simulation result verify that the laser irradiation intensity decreased remarkably at the junction due to diffraction of laser beam at gate electrode edge. We proposed oblique-incidence excimer laser annealing method and successfully eliminated the residual junction defects.

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