Effects of Excimer Laser Annealing Process on the Ni-Sputtered Amorphous Silicon Film

2010 ◽  
Vol 13 (10) ◽  
pp. H346 ◽  
Author(s):  
Moojin Kim ◽  
GuangHai Jin ◽  
Hoonkee Min ◽  
HoKyoon Chung ◽  
Sangsoo Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Annealing Process ◽  
Excimer Laser Annealing ◽  
Amorphous Silicon Film

Effect of Laser-Plasma X-Ray Irradiation on Crystallization of Amorphous Silicon Film by Excimer Laser Annealing

2007 ◽  
Vol 46 (No. 44) ◽  
pp. L1061-L1063 ◽  
Author(s):  
Naoto Matsuo ◽  
Kazuya Uejukkoku ◽  
Akira Heya ◽  
Sho Amano ◽  
Yasuyuki Takanashi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
Amorphous Silicon Film

A Two-Pass Excimer Laser Annealing Process to Control Amorphous Silicon Crystallization

1999 ◽  
Vol 38 (Part 2, No. 8B) ◽  
pp. L907-L910 ◽  
Author(s):  
Luigi Mariucci ◽  
Roberto Carluccio ◽  
Alessandro Pecora ◽  
Vittorio Foglietti ◽  
Guglielmo Fortunato ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Annealing Process ◽  
Excimer Laser Annealing

The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Nucleation Process During Excimer Laser Annealing of Amorphous Silicon Thin Films on Glass: A Molecular-dynamics Study

2006 ◽  
Vol 958 ◽  
Author(s):  
Shinji Munetoh ◽  
Takanori Mitani ◽  
Takahide Kuranaga ◽  
Teruaki Motooka
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Surface Region ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films ◽  
Steady State Temperature ◽  
Dynamics Simulations

ABSTRACTWe have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that nucleation predominantly occurred in the a-Si region as judged by the coordination numbers and diffusion constants of atoms in the region. The results suggest that nucleation occurs in unmelted residual a-Si region during the laser irradiation and then crystal growth proceeds toward liquid Si region under the near-complete melting condition.

Single shot excimer laser annealing of amorphous silicon: effect of hydrogen on the properties of the poly silicon

1995 ◽  
Vol 397 ◽  
Author(s):  
P. Boher ◽  
M. Stehle ◽  
B. Godard ◽  
J.L. Stehle
Keyword(s):  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Low Cost ◽  
Structural Quality ◽  
Single Shot ◽  
Excimer Laser Annealing ◽  
Medium Temperature ◽  
Glass Substrates

ABSTRACTPECVD amorphous silicon films deposited at different temperatures on low cost glass substrates have been treated by a Single Shot Excimer Laser Annealing (SSELA) at various energy densities. The influence of a thermal treatment at medium temperature (400°C) prior to the SSELA treatment was also investigated. Spectroscopie ellipsometry and Raman characterizations show that hydrogen contamination produces an important roughness increase with very little polycrystalline grains (650nm) after laser treatment. The thermal treatment prior laser annealing improves drastically the structural quality of the films. Structural results are correlated with the electrical performances of the TFT produced on these films.

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