Deposition of Hydrogenated Si Films by Hydrogenation of the SiO2 Surface and Hydrogen Dilution with PE-CVD and ECR-CVD

1994 ◽  
Vol 345 ◽  
Author(s):  
Kun-Chih Wang ◽  
Tri-Rung Yew ◽  
Huey-Liang Hwang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Hydrogen Dilution ◽  
Surface Steps ◽  
Transmission Electron ◽  
Temperature Deposition ◽  
Si Films

AbstractThis paper presents the results of low temperature deposition of poly-Si films deposited on SiO2 layers. Hydrogen dilution, hydrogen atom treatment, and hydrogenation of the SiO2 surface steps were applied to deposit the Si films. The above treatment steps were usually used in the plasma enhanced chemical vapor deposition and they were extended to be used in the electron cyclotron resonance chemical vapor deposition to identify the grain growth effects. The nucleation and microstructure of the silicon films were observed by cross-section transmission electron microscopy (XTEM).

Growth of Er Doped si Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

1993 ◽  
Vol 301 ◽  
Author(s):  
Jim L. Rogers ◽  
Walter J. Varhue ◽  
Edward Adams
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma Stream ◽  
Ecr Plasma ◽  
Si Films

ABSTRACTThin Si films doped with Er have been grown at low temperature by plasma enhanced chemical vapor deposition. The Er gas source is a sublimed organo-metallic compound fed into the process chamber. High doping concentrations without precipitation are possible because of the low deposition temperatures. The process relies on the beneficial effects of low energy ion bombardment to reduce the growth temperature. The ions as well as reactive chemical species are produced by an electron cyclotron resonance (ECR) plasma stream source. A hydrogen plasma stream is used to perform an in-situ pre-deposition clean to remove oxide from the Si surface. Film crystallinity and impurity concentration are determined by Rutherford backscattering spectrometry.

Growth Mechanism of Microcrystalline Silicon Deposited by ECRCVD

1996 ◽  
Vol 452 ◽  
Author(s):  
I. Beckers ◽  
E. Conrad ◽  
P. Müller ◽  
N. H. Nickel ◽  
I. Sieber ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Growth Mechanisms ◽  
Microcrystalline Silicon ◽  
Crystalline Fraction ◽  
Hydrogen Dilution ◽  
Si Films ◽  
Scanning Electron

AbstractMicrocrystalline silicon (μc-Si) films were prepared by electron cyclotron resonance assisted chemical vapor deposition (ECRCVD) using helium, argon and hydrogen dilution. The crystalline fraction was estimated from Raman backscattering spectra and scanning electron-microscopy (SEM) was used to obtain information on roughness and homogeneity of the films. For hydrogen dilution the highest crystallinity (Xc = 85 %) occurs at a ratio of ΔH = [H2]/([H2]+[SiH4])= 0.98. At the same time the deposition rate decreases continuously with increasing H2 dilution. These results are consistent with the idea that H etching promotes the growth of μc-Si. At ΔH > 0.98 a Xc decreases due to a H mediated transition of small crystallites into amorphous tissue. The implications of these results for the growth mechanisms are discussed.

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