Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma‐enhanced chemical vapor deposition
1995 ◽
Vol 13
(6)
◽
pp. 2900-2907
◽
1997 ◽
Vol 294
(1-2)
◽
pp. 214-216
◽
1992 ◽
Vol 139
(5)
◽
pp. 1489-1495
◽
1996 ◽
Vol 35
(Part 1, No. 9B)
◽
pp. 5089-5093
◽
Low‐Temperature Si Epitaxial Growth by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
1992 ◽
Vol 139
(7)
◽
pp. 1983-1988
◽
1983 ◽
Vol 22
(Part 2, No. 4)
◽
pp. L210-L212
◽
1997 ◽
Vol 36
(Part 2, No. 7B)
◽
pp. L936-L938