Formation of Shallow Junctions during Rapid Thermal Processing from Electron‐Beam Deposited Boron Sources

1996 ◽  
Vol 143 (9) ◽  
pp. 2981-2989 ◽  
Author(s):  
W. Zagozdzon‐Wosik ◽  
K. Korablev ◽  
I. Rusakova ◽  
D. Simons ◽  
J. H. Shi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Shallow Junctions

Influence of Stoichiometric Variations and Rapid Thermal Processing of β-FESI2 thin Films on their Electrical and Microstructural Properties

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Döscher ◽  
B. Selle ◽  
M. Pauli ◽  
F. Kothe ◽  
J. Szymanski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Rf Sputtering ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Phonon Spectra ◽  
First Results

AbstractAmorphous irondisilicide thin films were deposited on silicon substrates in a RF sputtering process, followed by rapid thermal crystallization by means of moving the thin film beneath a line-shaped electron beam to form β-FeSi2. Depending on the deposition process parameters, films of a different stoichiometry can be produced. The deviations from the 1:2 stoichiometry, which have been determined by Rutherford Backscattering (RBS), are related to changes in the microstructure (studied by microscopic methods like TEM and AFM), the infrared phonon spectra (measured by FTIR spectroscopy) and the electrical properties of the crystallized films. The microstructure of the iron disilicide thin films is improved when the composition significantly deviates from 2.0, probably due to silicon interstitials in the silicide thin film. Films of different stoichiometry result in p- or n-type thin films with carrier densities below 5×1018cm−3 and hall mobilities up to 180cm 2/Vs. First results show that not only β-FeSi2-siliconheterojunctions as reported before but also pn-β-FeSi2-homojunctions show rectifying behavior. Rapid thermal processing with the line electron beam leads to a further improvement of the film quality when the scan velocity is increased up to the order of several cm/s.

Rapid Thermal Processing of Shallow Junctions Using Epitaxial CoSi2 as a Doping Source

1994 ◽  
Vol 342 ◽  
Author(s):  
Erin C. Jones ◽  
Shinichi Ogawa ◽  
Paul Ameika ◽  
M. Lawrence A. Dass ◽  
David B. Fraser ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Leakage Current ◽  
Thermal Processing ◽  
Polycrystalline Material ◽  
Metal Layer ◽  
Rapid Thermal Processing ◽  
Shallow Junctions ◽  
Total Leakage ◽  
Current Densities

ABSTRACTThe electrical properties of shallow P+/N junctions formed by boron outdiffusion from polycrystalline and epitaxial CoSi2 contacts are discussed. The CoSi2 contacts are grown on (100) Si from a sputtered metal layer by rapid thermal annealing (RTA) at 900°C in forming gas. The epitaxial CoSi2 (epi-CoSi2) is made from layers of 15 nm Co / 2 nm Ti, and the polycrystalline material (poly-CoSi2) is made from a 15 nm Co layer with no Ti. Dopant is introduced by ion implantation into the silicide and the P+/N junctions are formed by a second RTA step. Junctions are found to have total leakage current densities as low as 4 nA/cm2 for poly-CoSi2 and 12 nA/cm2 for epi-CoSi2 at -5V and metallurgical junction depths of 60 nm beyond silicide/Si interface after 700-800°C annealing.

Properties of Pt/Ti Contacts to III-V Materials

1990 ◽  
Vol 216 ◽  
Author(s):  
A. Katz ◽  
S. Nakahara ◽  
S. N. G. Chu ◽  
B. E. Weir ◽  
C. R. Abemathy ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Microstructure Evolution ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electron Beam Evaporation ◽  
Semiconductor Materials ◽  
Processing Conditions ◽  
Ternary Semiconductor ◽  
P Type

ABSTRACTPt/Ti contact to variety of binary III-V and related ternary semiconductor materials were established. These contacts were formed by electron beam evaporation and subsequent rapid thermal processing in order to sinter the metal-semiconductor systems. The contacts to p-type InAs, GaAs, In0.53Ga0.43As, In0.52Al0.4As and Ga0.7Al0.3As were ohmic, as a result of heating at temperatures of 450°C or higher. The Pt/Ti contacts to InP and GaP displayed Schottky behavior as-deposited and preserved the rectifying nature through heat treatments, regardless of the processing conditions. The electrical properties and the microstructure evolution in these 7 systems is discussed in this paper.

The effects of rapid thermal processing on ultra-shallow junctions for deep sub-micron MOSFETs

1995 ◽  
Vol 38 (8) ◽  
pp. 1473-1477 ◽  
Author(s):  
R Liu ◽  
C.-Y Lu ◽  
J.J Sung ◽  
C.-S Pai ◽  
N.-S Tsai
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Silicide Formation by Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
L.J. Chen ◽  
W. Lur ◽  
J.F. Chen ◽  
T.L. Lee ◽  
J.M. Liang
Keyword(s):  
Thermal Stability ◽  
Rare Earth ◽  
Thermal Processing ◽  
Metastable Phase ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
Vacancy Ordering ◽  
Shallow Junctions ◽  
Device Applications ◽  
Growth Formation

ABSTRACTAn overview of silicide formation by rapid thermal processing is presented. Recent progresses on device applications, phase formation, growth kinetics, thermal stability, epitaxial growth, formation of metastable phase, vacancy ordering in rare-earth silicides and Ti-based shallow junctions involving rapid thermal processing are used as examples to highlight the applications of rapid thermal processing in connection with silicide formation.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction
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