Rapid Thermal Processing Requirements for 0.35-µm IC Technologies and Beyond

1994 ◽  
Vol 342 ◽  
Author(s):  
Mehrdad M. Moslehi
Keyword(s):  
Process Control ◽  
Design Process ◽  
Thermal Processing ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Unit Process ◽  
The Past ◽  
Cmos Ic ◽  
Manufacturing Science

ABSTRACTThis paper will present an overview of rapid thermal processing (RTP) technologies for fastcycle-time IC production. RTP has experienced significant advances in equipment design, process control capabilities, and unit process applications over the past eight years. The Microelectronics Manufacturing Science and Technology (MMST) program at TI successfully demonstrated CMOS IC production in a single-wafer factory with all-RTP thermal fabrication for various anneals, oxidations, and chemical-vapor depositions. The use of RTP in conjunction with other single-wafer processes enabled 0.35 µm IC fabrication with a 3-day cycle time. Selected RTP equipment, sensor, and process control developments will be reviewed. The RTP applications and requirements for state-of-the-art and future IC technologies will be described.

Commercial RTP-A SEMATECH Perspective

1996 ◽  
Vol 429 ◽  
Author(s):  
Tony Speranza ◽  
Terry Riley ◽  
Arun Nanda ◽  
Burt Fowler ◽  
Kenneth Torres ◽  
...  
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Semiconductor Manufacturing ◽  
Rapid Thermal Processing ◽  
Component Technology ◽  
Tool Development ◽  
Productivity Improvement ◽  
The Past ◽  
Vertical Furnace ◽  
Cluster Tool

AbstractThis paper discusses various commercial aspects of Rapid Thermal Processing (RTP). It provides an overview of SEMATECH's efforts to improve the manufacturing viability of RTP. Over the past several years SEMATECH, a U.S. Government/Industry consortium, has identified thermal equipment and processing needs relating to semiconductor manufacturing. It has aggressively pursued solutions to these needs through specific equipment projects. These projects include: RTP Installed Base Productivity Improvement, 0.25um RTP Tool Development, and RTP Modeling and Component Technology. Also discussed are several thermal projects which focus on the performance of more traditional tools. A comparison between RTP and a vertical furnace with model based process control and a small batch fast ramp furnace is made. A brief discussion of an RTP gate stack cluster tool project is followed by a review of future thermal processing needs, including 300mm.

In-process control of silicide formation during rapid thermal processing

1993 ◽  
Vol 63 (1-4) ◽  
pp. 131-134 ◽  
Author(s):  
J.-M. Dilhac ◽  
C. Ganibal ◽  
N. Nolhier ◽  
P.B. Moynagh ◽  
C.P. Chew ◽  
...  
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation

Microscale Radiation Effects in Multilayer Thin-Film Structures During Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Peter Y. Wong ◽  
Christopher K. Hess ◽  
Ioannis N. Miaoulis
Keyword(s):  
Thin Film ◽  
Numerical Model ◽  
Thermal Processing ◽  
Radiation Effects ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Film Structure ◽  
Transient Temperature ◽  
Multilayered Structures ◽  
Temperature Distributions

ABSTRACTThe individual film thicknesses of multilayered structures processed by rapid thermal processing are of the same order as the wavelengths of the incident radiation. This induces optical interference effects which are responsible for the strong dependency of surface reflectivity, emissivity, and temperature distributions on the geometry of the layering structures, presence of patterns, and thickness of the films. A two-dimensional, finitedifference numerical model has been developed to investigate this microscale radiation phenomena and identify the critical processing parameters which affect rapid thermal processing of multilayer thin films. The uniformity of temperature distributions throughout the wafer during rapid thermal processing is directly affected by incident heater configurations, ramping conditions, wafer-edge effects, and thin-film layering structure. Results from the numerical model for various film structures are presented for chemical vapor deposition of polycrystalline silicon over oxide films on substrate. A novel technique using an edge-enhanced wafer which has a different film structure near its edge is presented as a control over the transient temperature distribution.

Multizone Rapid Thermal Processing to Overcome Challenges in Carbon Nanotube Manufacturing by Chemical Vapor Deposition

2019 ◽  
Author(s):  
Jaegeun Lee ◽  
Moataz Abdulhafez ◽  
Mostafa Bedewy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned ◽  
Scalable Production

Abstract For the scalable production of commercial products based on vertically aligned carbon nanotubes (VACNTs), referred to as CNT forests, key manufacturing challenges must be overcome. In this work, we describe some of the main challenges currently facing CNT forest manufacturing, along with how we address these challenges with our custom-built rapid thermal processing chemical vapor deposition (CVD) reactor. First, the complexity of multistep processes and reaction pathways involved in CNT growth by CVD limits the control on CNT population growth dynamics. Importantly, gas-phase decomposition of hydrocarbons, formation of catalyst particles, and catalytic growth of CNTs are typically coupled. Here, we demonstrated a decoupled recipe with independent control of each step. Second, significant run-to-run variations plague CNT growth by CVD. To improve growth consistency, we designed various measures to remove oxygen-containing molecules from the reactor, including air baking between runs, dynamic pumping down cycles, and low-pressure baking before growth. Third, real-time measurements during growth are needed for process monitoring. We implement in situ height kinetics via videography. The combination of approaches presented here has the potential to transform lab-scale CNT synthesis to robust manufacturing processes.

SIMS STUDY OF SILICON OXYNITRIDE RAPID THERMALLY GROWN IN NITRIC OXIDE

2001 ◽  
Vol 08 (05) ◽  
pp. 569-573
Author(s):  
R. LIU ◽  
K. H. KOA ◽  
A. T. S. WEE ◽  
W. H. LAI ◽  
M. F. LI ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Dielectric ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Growth Characteristics ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Secondary Ion

As the gate dielectric for ULSI MOS devices scales in the ultrathin regime, it is fabricated increasingly with silicon oxynitride instead of silicon dioxide films. One way to obtain silicon oxynitride films is the rapid thermal oxidation of silicon in NO (RTNO). Earlier RTNO growth studies were not sufficiently comprehensive as well as limited by temperature uncertainty and nonuniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, RTNO growth characteristics at oxidation pressures of 100 and 760 Torr, oxidation temperatures from 900 to 1200°C and oxidation times from 0 to 480 s were obtained and investigated. Anomalies in the growth characteristics were observed. It was also demonstrated that secondary ion mass spectrometry (SIMS) using the MCs + method could be used to accurately determine the depth distribution of N in ultrathin silicon oxynitride films.

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