Epitaxial CeO2 Growth on Si (111) for SOI

1994 ◽  
Vol 341 ◽  
Author(s):  
L. Tye ◽  
T. Chikyow ◽  
N. A. El-Masry ◽  
S. M. Bedair
Keyword(s):  
Laser Ablation ◽  
Electrical Properties ◽  
Epitaxial Growth ◽  
Surface States ◽  
Amorphous Layer ◽  
Growth Conditions ◽  
Post Annealing ◽  
Interfacial States ◽  
Epitaxial Oxide ◽  
Lattice Matched

AbstractEpitaxial growth of CeO2 was obtained on the Si(111) surface by laser ablation in UHV atmosphere. However, a dual amorphous layer formed at the interface, yielding a CeO2/α:-CeOx/α-SiO2/Si(111) structure. This structure is speculated to be caused by a reaction occurring between Ce oxide and Si. Post annealing in O2 ambient caused the regrowth of CeO2, eliminated the α-CeOx layer, and increased the thickness of the SiO2 layer. The new CeO2/SiO2/Si(111) structure shows improved breakdown voltage and fewer interfacial states as observed by C-V and I-V measurements. The SiO2 is expected to tie surface states with Si, whereas the single crystal CeO2 will allow the epitaxial growth of lattice-matched Si on this insulating film. The effect of growth conditions and O2 annealing on both the structural and the electrical properties of this epitaxial oxide will be presented.

Laser Patterning and Electrical Properties of Submicron Lines of Y-Ba-Cu-O

1989 ◽  
Vol 158 ◽  
Author(s):  
J. P Zheng ◽  
Q. Y. Ying ◽  
H. S. Kim ◽  
D. Bhattacharya ◽  
D. T. Shaw ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Critical Current ◽  
Laser Deposition ◽  
Direct Laser Writing ◽  
Laser Patterning ◽  
Post Annealing ◽  
Direct Laser ◽  
Current Densities

ABSTRACT0.6 µm-wide lines of high Tc Y-Ba-Cu-O have been fabricated by direct laser writing on mirror-like thin films which were grown by laser deposition without post annealing. Laser ablation etching had no effect on the Tc and Jc until the lines were < 1µm wide. The 0.6 µm-wide strip showed some degradation of Tc and Jc. The critical current densities for these patterned lines were measured to be ∼5×106 A/cm2 at 50 K.

Epitaxial growth of Mn–Co–Ni–O thin films and thickness effects on the electrical properties

2014 ◽  
Vol 130 ◽  
pp. 127-130 ◽  
Author(s):  
Guang Ji ◽  
Aimin Chang ◽  
Hongyi Li ◽  
Yahong Xie ◽  
Huimin Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Epitaxial Growth

Growth and Characterization of AllnGaN/InGaN Heterostructures

1996 ◽  
Vol 423 ◽  
Author(s):  
J. C. Roberts ◽  
F. G. Mcintosh ◽  
M. Aumer ◽  
V. Joshkin ◽  
K. S. Boutros ◽  
...  
Keyword(s):  
High Performance ◽  
Visible Spectrum ◽  
Growth Conditions ◽  
Light Emitting ◽  
Mocvd Growth ◽  
Near Ultraviolet ◽  
Active Layers ◽  
Double Heterostructures ◽  
Lattice Matched

AbstractThe emission wavelength of the InxGa1−xN ternary system can span from the near ultraviolet through red regions of the visible spectrum. High quality double heterostructures with these InxGa1−xN active layers are essential in the development of efficient optoelectronic devices such as high performance light emitting diodes and laser diodes. We will report on the MOCVD growth and characterization of thick and thin InGaN films. Thick InxGa1−xN films with values of x up to 0.40 have been deposited and their photoluminescence (PL) spectra measured. AlGaN/InGaN/AlGaN double heterostructures (DHs) have been grown that exhibit PL emission in the violet, blue, green and yellow spectral regions, depending on the growth conditions of the thin InGaN active layer. Preliminary results of an AllnGaN/InGaN/AllnGaN DH, with the potential of realizing a near-lattice matched structure, will also be presented.

Laser ablation time-of-flight mass spectrometric probing of the surface states of SiO 2 -based porous materials

1998 ◽  
Vol 66 (1) ◽  
pp. 99-102 ◽  
Author(s):  
C. Xu ◽  
Y. Long ◽  
R. Zhang ◽  
L. Zhao ◽  
S. Qian ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Porous Materials ◽  
Time Of Flight ◽  
Surface States ◽  
Mass Spectrometric ◽  
Ablation Time
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