Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. I. Surface states

1972 ◽  
Vol 11 (1) ◽  
pp. 287-296 ◽  
Author(s):  
J. L. Pautrat ◽  
J. C. Pfister
Keyword(s):  
Electronic Properties ◽  
Surface States ◽  
Growth Conditions ◽  
Oxide Growth

scholarly journals Effect of Point Defects on Electronic Properties and Structure of Talc (001) Surface by First Principles

Minerals ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 69
Author(s):  
Xindi Ma ◽  
Huicong Du ◽  
Ping Lan ◽  
Jianhua Chen ◽  
Lihong Lan
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
Surface States ◽  
State Density ◽  
Functional Theory ◽  
Vacancy Defects ◽  
Impurity Atoms ◽  
Electron State Density ◽  
Calculation Results ◽  
Impurity Defects

The surface structure and electronic properties of Mg vacancy defects on talc (001) and impurity defects with Fe, Mn, Ni, Al, and Ca replacing Mg atoms were calculated by using density functional theory. The calculation results show that the order of impurity substitution energy is Mn < Ni < Al < Ca < Fe. This indicates that Fe impurity defects are most easily formed in talc crystals. The covalent bonding between Si atoms and reactive oxygen atoms adjacent to impurity atoms is weakened and the ionic property is enhanced. The addition of Fe, Mn, and Ni atoms makes the surface of talc change from an insulator to a semiconductor and enhances its electrical conductivity. The analysis of electron state density shows that surface states composed of impurity atoms 4S orbital appear near the Fermi level.

UPS, XPS, AES STUDIES OF Te THIN FILMS DEPOSITED ON Si(100) 2×1

1994 ◽  
Vol 01 (04) ◽  
pp. 589-592 ◽  
Author(s):  
S. DI NARDO ◽  
L. LOZZI ◽  
M. PASSACANTANDO ◽  
P. PICOZZI ◽  
S. SANTUCCI
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electronic Properties ◽  
Valence Band ◽  
Room Temperature ◽  
Surface States ◽  
Growth Mode ◽  
Characteristic Behavior ◽  
Complete Study ◽  
Nominal Coverage

This work represents the first complete study of the interaction between Te and Si in very thin films of tellurium grown at room temperature on Si(100) 2×1 surfaces. In particular, the electronic properties have been investigated by UPS and XPS measurements and information on growth of tellurium on silicon have been obtained by AES measurements. Our results indicate that the interaction between tellurium and silicon is weak, taking the characteristic behavior of simple metals. Increasing the film thickness, the growth mode is one layer, completed with about 2 Å of Te nominal coverage, plus islanding, until the thickness reaches the value of about 10 Å, followed by coalescence of islands. When tellurium has completed a layer, the valence band surface states of silicon are quenched.

A Probe of Chemical Oxide Growth Conditions

2001 ◽  
Vol 76-77 ◽  
pp. 185-188
Author(s):  
Larry W. Shive ◽  
Claire Frey ◽  
Carissima Vitus
Keyword(s):  
Growth Conditions ◽  
Oxide Growth

NEW ELECTRONIC STATES ON CLEAN Si(110)-“16×2” SURFACES

1995 ◽  
Vol 02 (05) ◽  
pp. 573-577 ◽  
Author(s):  
A. CRICENTI ◽  
B. NESTERENKO ◽  
P. PERFETTI ◽  
G. LE LAY ◽  
C. SEBENNE
Keyword(s):  
Electronic Properties ◽  
Brillouin Zone ◽  
Photoelectron Spectroscopy ◽  
Structural Model ◽  
Electronic States ◽  
Surface States ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Brillouin Zone ◽  
Differential Reflectivity

The electronic properties of a clean Si (110)-“16×2” surface have been studied by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and surface differential reflectivity (SDR). Four surface states have been recognized by ARUPS and their dispersions have been mapped along the main symmetry lines in the surface Brillouin zone. SDR experiments revealed transitions between filled and empty surface states at ~ 1.8, 2.4, and 2.9 eV. The results are explained on the basis of a new structural model of the Si (110)-“16×2” phase.

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