Laser ablation time-of-flight mass spectrometric probing of the surface states of SiO 2 -based porous materials

1998 ◽  
Vol 66 (1) ◽  
pp. 99-102 ◽  
Author(s):  
C. Xu ◽  
Y. Long ◽  
R. Zhang ◽  
L. Zhao ◽  
S. Qian ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Porous Materials ◽  
Time Of Flight ◽  
Surface States ◽  
Mass Spectrometric ◽  
Ablation Time

scholarly journals A method for improvement of mass resolution and isotope accuracy for laser ablation time-of-flight mass spectrometers

2018 ◽  
Vol 33 (1) ◽  
pp. e3081 ◽  
Author(s):  
Reto Wiesendanger ◽  
Marek Tulej ◽  
Valentine Grimaudo ◽  
Alena Cedeño-López ◽  
Rustam Lukmanov ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Time Of Flight ◽  
Mass Resolution ◽  
Mass Spectrometers ◽  
Ablation Time

Capabilities of laser ablation – ICP-TOF-MS coupling for isotopic analysis of individual uranium micrometric particles

2018 ◽  
Vol 33 (11) ◽  
pp. 1892-1902 ◽  
Author(s):  
Anne-Laure Ronzani ◽  
Fabien Pointurier ◽  
Martin Rittner ◽  
Olga Borovinskaya ◽  
Martin Tanner ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Time Of Flight ◽  
Isotopic Analysis ◽  
Ablation Time ◽  
Isotopic Compositions ◽  
Icp Ms ◽  
Tof Ms

Isotopic compositions of individual uranium micrometric particles are measured precisely by means of laser ablation – time of flight ICP-MS coupling.

scholarly journals Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Ravi Mawale ◽  
Govinda Mandal ◽  
Marek Bouška ◽  
Jan Gutwirth ◽  
Pankaj Lochan Bora ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Laser Ablation ◽  
Density Functional ◽  
Structural Information ◽  
Time Of Flight ◽  
Mass Spectrometry Analysis ◽  
Individual Species ◽  
Ablation Time ◽  
Flight Mass Spectrometry

AbstractThe Ge-Bi-Se thin films of varied compositions (Ge content 0–32.1 at. %, Bi content 0–45.7 at. %, Se content 54.3–67.9 at. %) have been prepared by rf magnetron (co)-sputtering technique. The present study was undertaken in order to investigate the clusters generated during the interaction of laser pulses with Ge-Bi-Se thin films using laser ablation time-of-flight mass spectrometry. The stoichiometry of the clusters was determined in order to understand the individual species present in the plasma plume. Laser ablation of Ge-Bi-Se thin films accompanied by ionization produces about 20 positively and/or negatively charged unary, binary and ternary (Gex+, Biy+, Sez+/−, GexSez+/−, BiySez+/− and GexBiySez−) clusters. Furthermore, we performed the laser ablation experiments of Ge:Bi:Se elemental mixtures and the results were compared with laser ablation time-of-flight mass spectrometry analysis of thin films. Moreover, to understand the geometry of the generated clusters, we calculated structures of some selected binary and ternary clusters using density functional theory. The generated clusters and their calculated possible geometries can give important structural information, as well as help to understand the processes present in the plasma processes exploited for thin films deposition.

scholarly journals Quantitative analysis of a brass alloy using CF-LIBS and a laser ablation time-of-flight mass spectrometer

Laser Physics ◽  
2017 ◽  
Vol 28 (1) ◽  
pp. 016002 ◽  
Author(s):  
Nasar Ahmed ◽  
M Abdullah ◽  
Rizwan Ahmed ◽  
N K Piracha ◽  
M Aslam Baig
Keyword(s):  
Quantitative Analysis ◽  
Laser Ablation ◽  
Mass Spectrometer ◽  
Time Of Flight ◽  
Brass Alloy ◽  
Ablation Time ◽  
Flight Mass Spectrometer
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