CVD-Growth of Low-Doped 6H SIC Epitaxial Films

1994 ◽  
Vol 339 ◽  
Author(s):  
O. Kordina ◽  
A. Henry ◽  
C. Hallin ◽  
R. C. Glass ◽  
A. O. Konstantinov ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Free Exciton ◽  
Chemical Vapour ◽  
Epitaxial Films ◽  
Temperature Growth ◽  
Capacitance Voltage ◽  
Exciton Recombination ◽  
Cvd Growth ◽  
Wall System ◽  
Sic Films

ABSTRACTWe present a method for growing low-doped 6H SiC films using chemical vapour deposition in a hot-wall system. The study discusses the influence of temperature, growth rate and C/Si ratio on the purity of the layers. Furthermore, we make a comparison between methane and propane as carbon source, and investigate the influence of bake-out prior to growth. The films are characterised using low temperature photoluminescence. The relative intensity of the free exciton related luminescence as compared to impurity related bound exciton recombination is discussed in terms of material purity. A capacitance-voltage technique is used to determine the doping concentration.

A Study of Free- and Bound-Exciton Recombination in Device Quality Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
S. J. Sharp ◽  
A. T. Collins
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Temperature Dependence ◽  
High Purity ◽  
Vapour Deposition ◽  
Synthetic Diamond ◽  
Free Exciton ◽  
Chemical Vapour ◽  
High Pressure High Temperature ◽  
Exciton Recombination

ABSTRACTA cathodoluminescence (CL) study of free- and bound-exciton recombination in high purity high pressure high temperature (HPHT) synthetic diamond is presented, including temperature dependence measurements of the free-exciton intensity and luminescence decaytime. The results are compared with those from device quality diamond produced using the chemical vapour deposition (CVD) process.

Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di-tert-butylsilane

1992 ◽  
Vol 70 (10-11) ◽  
pp. 946-948
Author(s):  
S. B. Hewitt ◽  
S.-P. Tay ◽  
N. G. Tarr ◽  
A. R. Boothroyd
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Silicon Substrates ◽  
Phosphorus Doping ◽  
Forward Current ◽  
Pressure Chemical ◽  
Sic Films

Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.

Effect of Ferrocene Catalyst and Hydrogen Feed on Microstructures of Vertically Aligned MWCNTs

2016 ◽  
Vol 701 ◽  
pp. 8-12
Author(s):  
Shazia Shukrullah ◽  
Norani Muti Mohamed ◽  
Maizatul Shima Shaharun ◽  
Muhammad Yasar
Keyword(s):  
Carbon Nanotubes ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Areal Density ◽  
Optimum Conditions ◽  
Catalyst Amount ◽  
Multi Walled Carbon Nanotubes ◽  
Cvd Growth ◽  
Vertically Aligned ◽  
Walled Carbon Nanotubes

This study investigated the effect of catalyst amount on chemical vapour deposition (CVD) growth of multi-walled carbon nanotubes (MWCNTs) with and without hydrogen feed. The ferrocene weight was varied from 100 mg to 200 mg for CNTs growth over Si/SiO2/Al2O3 substrate. Very few CNTs were seen in micrographs of the samples produced in the absence of the hydrogen feed. Most of the carbon atoms precipitated into amorphous carbon due to existence of inactive catalyst particles. However, CNT structures grown with hydrogen feed were more distinct; the nanotubes were thinner, straight and highly crystalline. MWCNTs arrays/forest length was also increased from 120 µm to 850 µm with hydrogen feed. An increase in catalyst weight significantly affected the diameter, crystallinity, alignment and growth of nanotubes. The lowest inner-shell spacing of 0.348 nm was obtained with 150 mg of ferrocene, which is an indication of growth of relatively pure CNTs. Under the optimum conditions, the areal density of the ferrocene particles was sufficiently increased to get required alignment and crystallinity of MWCNTs.

Phase selective CVD growth and photoinduced 1T → 1H phase transition in a WS2 monolayer

2020 ◽  
Vol 8 (30) ◽  
pp. 10438-10447
Author(s):  
Deepa Thakur ◽  
Pawan Kumar ◽  
Viswanath Balakrishnan
Keyword(s):  
Phase Transition ◽  
Fluorescence Microscopy ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Cvd Growth ◽  
Ws2 Monolayer

We report the direct chemical vapour deposition (CVD) growth of the metastable 1T phase of a WS2 monolayer and the in situ phase transition characteristics with the aid of Raman, photoluminescence and fluorescence microscopy.

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