Phase selective CVD growth and photoinduced 1T → 1H phase transition in a WS2 monolayer

2020 ◽  
Vol 8 (30) ◽  
pp. 10438-10447
Author(s):  
Deepa Thakur ◽  
Pawan Kumar ◽  
Viswanath Balakrishnan
Keyword(s):  
Phase Transition ◽  
Fluorescence Microscopy ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Cvd Growth ◽  
Ws2 Monolayer

We report the direct chemical vapour deposition (CVD) growth of the metastable 1T phase of a WS2 monolayer and the in situ phase transition characteristics with the aid of Raman, photoluminescence and fluorescence microscopy.

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di-tert-butylsilane

1992 ◽  
Vol 70 (10-11) ◽  
pp. 946-948
Author(s):  
S. B. Hewitt ◽  
S.-P. Tay ◽  
N. G. Tarr ◽  
A. R. Boothroyd
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Silicon Substrates ◽  
Phosphorus Doping ◽  
Forward Current ◽  
Pressure Chemical ◽  
Sic Films

Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.

scholarly journals In Situ Doping of Nitrogen in -Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Materials ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 410
Author(s):  
Youfeng Lai ◽  
Lixue Xia ◽  
Qingfang Xu ◽  
Qizhong Li ◽  
Kai Liu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Chemical Vapour Deposition ◽  
High Speed ◽  
Vapour Deposition ◽  
Volume Fraction ◽  
Chemical Vapour ◽  
Optical Transmittance ◽  
Undoped Sample ◽  
Maximum Value

Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.

Chemical vapour deposition tungsten film growth studied by in situ growth stress measurements

1993 ◽  
Vol 228 (1-2) ◽  
pp. 125-128 ◽  
Author(s):  
G.J. Leusink ◽  
T.G.M. Oosterlaken ◽  
G.C.A.M. Janssen ◽  
S. Redelaar
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Film Growth ◽  
Chemical Vapour ◽  
Growth Stress ◽  
In Situ Growth ◽  
Stress Measurements ◽  
Tungsten Film

Growth of Fe-doped ZnO nanorods using aerosol-assisted chemical vapour deposition via in situ doping

2014 ◽  
Vol 116 (4) ◽  
pp. 1801-1811 ◽  
Author(s):  
Siti Nor Qurratu Aini Abd Aziz ◽  
Swee-Yong Pung ◽  
Zainovia Lockman
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Zno Nanorods ◽  
Chemical Vapour ◽  
Doped Zno
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