Diamond Chemical Vapor Deposition: Gas Compositions and film Properties

1994 ◽  
Vol 339 ◽  
Author(s):  
Peter K. Bachmann ◽  
Hans-Jürgen Hagemann ◽  
Hartmut Lade ◽  
Dieter Leers ◽  
Frederike Picht ◽  
...  

ABSTRACTRate, crystallinity and phase purity of vapor-grown diamond deposits are discussed. Emphasis is on microwave plasma CVD of diamond from C/H-, C/H/O-, C/H/F-, C/H/CI- and C/H/N-gas mixtures.The manufacture of wear-resistant diamond thin films, diamond vacuum window membranes and thick diamond heat spreader plates are used as examples to outline the influence of various deposition parameters on the performance of finished products and to describe the use of ternary gas phase compositional diagrams as tools for minimization of deposition technology and product optimization efforts.

2021 ◽  
Vol 4 (2) ◽  
pp. 68-71
Author(s):  
S. A. Razak ◽  
N. N. Nordin ◽  
M. A. Sulaiman ◽  
M. Yusoff ◽  
M. N. Masri

Development of carbon nanotubes was done by several methods like arc discharge, laser ablation, silane solution, flame synthesis method but the standard or famous technique using chemical vapor deposition (CVD). CVD is one of the approaches to develop CNT, due to easy control of the reaction course and high purity of the obtained materials. Various type of CVD present like thermal CVD, plasma enhanced CVD, or microwave plasma CVD. These kinds of types give the different advantage and drawbacks to the production of CNT and its preparations.


2003 ◽  
Vol 18 (2) ◽  
pp. 296-304 ◽  
Author(s):  
N. Ali ◽  
V.F. Neto ◽  
J. Gracio

In this paper, we present results obtained from a comparison study relating to the deposition of diamond films using two processes, namely, time-modulated chemical vapor deposition (TMCVD) and conventional CVD. Polycrystalline diamond films were deposited onto silicon substrates using both hot-filament CVD and microwave plasma CVD systems. The key feature of TMCVD is that it modulates methane (CH4) flow during diamond CVD, whereas in conventional CVD the CH4 flow is kept constant throughout the deposition process. Films grown using TMCVD were smoother, harder, and displayed better quality than similar films grown using constant CH4 flow during CVD. The advantage of using TMCVD is that it promotes secondary nucleation to occur on existing diamond crystals. Pulsing CH4, consecutively, at high and low concentrations allows the depositing film to maintain its quality in terms of diamond-carbon phase. Films grown under constant CH4 flow during diamond CVD displayed a columnar growth mode, whereas with the time modulated films the growth mode was different. The mechanism of film growth during TMCVD is presented in this paper. The growth rate of films obtained using the hot filament CVD system with constant CH4 flow was higher than the growth rate of time modulated films. However, using the microwave-plasma CVD system, the effect was the contrary and the time-modulated films were grown at a higher rate. The growth rate results are discussed in terms of substrate temperature changes during TMCVD.


2021 ◽  
Vol 116 ◽  
pp. 108394
Author(s):  
Justas Zalieckas ◽  
Paulius Pobedinskas ◽  
Martin Møller Greve ◽  
Kristoffer Eikehaug ◽  
Ken Haenen ◽  
...  

Vacuum ◽  
2018 ◽  
Vol 147 ◽  
pp. 134-142 ◽  
Author(s):  
J. Weng ◽  
F. Liu ◽  
L.W. Xiong ◽  
J.H. Wang ◽  
Q. Sun

1996 ◽  
Vol 47 (7) ◽  
pp. 611-615
Author(s):  
Hiroyuki TANAKA ◽  
Toshiaki TANAKA ◽  
Hideaki SOHMA ◽  
Masato YOSHIDA ◽  
Akira SAKAI ◽  
...  

2019 ◽  
Vol 92 ◽  
pp. 41-46 ◽  
Author(s):  
Yohei Harada ◽  
Ryota Hishinuma ◽  
Nicolae Spătaru ◽  
Yusei Sakurai ◽  
Kazuya Miyasaka ◽  
...  

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