Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy

1994 ◽  
Vol 339 ◽  
Author(s):  
J. S. Chan ◽  
T. C. Fu ◽  
N. W. Cheung ◽  
N. Newman ◽  
X. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Transmission Line ◽  
Ohmic Contact ◽  
Molecular Beam ◽  
Ion Beam ◽  
Electrical Measurements ◽  
Sapphire Substrates ◽  
Wide Range ◽  
Uv Range

AbstractGallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10∼2 to 10-6 Ω-cm2) which changed with annealing.

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

2014 ◽  
Vol 104 (9) ◽  
pp. 092113 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Yoshitaka Taniyasu ◽  
Shin-ichi Karimoto ◽  
Yoshiharu Krockenberger ◽  
Hideki Yamamoto
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Single Crystal ◽  
Molecular Beam ◽  
Ion Beam ◽  
Cubic Boron Nitride

Boron Nitride Thin Films Grown on (0001) Sapphire Substrates by Molecular Beam Epitaxy

2017 ◽  
Author(s):  
Y. Kobayashi ◽  
T. Kimura ◽  
H. Nakazawa ◽  
H. Okamoto ◽  
M. Hiroki ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Sapphire Substrates

Growth of non-polar Zn1−x Mg x O thin films with different Mg contents on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

2014 ◽  
Vol 116 (4) ◽  
pp. 1979-1983 ◽  
Author(s):  
W. Chen ◽  
X. H. Pan ◽  
P. Ding ◽  
H. H. Zhang ◽  
S. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Sapphire Substrates

Plasma-assisted molecular beam epitaxy of ZnO thin films on sapphire substrates with an MgO buffer

2001 ◽  
Vol 227-228 ◽  
pp. 917-922 ◽  
Author(s):  
Y.F Chen ◽  
H.J Ko ◽  
S.K Hong ◽  
K Inaba ◽  
Y Segawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Films ◽  
Sapphire Substrates

High-quality m-plane GaN thin films deposited on γ-LiAlO2 by ion-beam-assisted molecular-beam epitaxy

2006 ◽  
Vol 88 (1) ◽  
pp. 011902 ◽  
Author(s):  
J. W. Gerlach ◽  
A. Hofmann ◽  
T. Höche ◽  
F. Frost ◽  
B. Rauschenbach ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
High Quality
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