Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

2014 ◽  
Vol 104 (9) ◽  
pp. 092113 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Yoshitaka Taniyasu ◽  
Shin-ichi Karimoto ◽  
Yoshiharu Krockenberger ◽  
Hideki Yamamoto
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Single Crystal ◽  
Molecular Beam ◽  
Ion Beam ◽  
Cubic Boron Nitride

Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxy

1990 ◽  
Vol 99 (1-4) ◽  
pp. 451-454 ◽  
Author(s):  
Yoshitaka Tomomura ◽  
Masahiko Kitagawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Homoepitaxial Growth

Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films

1976 ◽  
Vol 15 (6) ◽  
pp. 1001-1007 ◽  
Author(s):  
Takafumi Yao ◽  
Satoru Amano ◽  
Yunosuke Makita ◽  
Shigeru Maekawa
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Epitaxial growth of Cu-Ni Single Crystal Alloys and Multilayers by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
R.P. Burns ◽  
Y.H. Lee ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
M.J. Mantini ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Substrate Material ◽  
High Reactivity ◽  
Lattice Match ◽  
Single Crystal Films ◽  
Crystal Films

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.

Ion Beam Assisted Deposition of Cubic Boron Nitride Thin Films

1991 ◽  
Vol 235 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Secondary Phase ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Argon Ions

ABSTRACTBoron nitride thin films were grown using ion beam assisted deposition. Boron metal was evaporated, and the depositing film was bombarded by nitrogen and argon ions. The films were characterized using Fourier transform infrared spectroscopy, electron diffraction, transmission electron microscopy, and Rutherford backscattering. The thin films were found to be cubic boron nitride, consisting of 100–200 Å crystallites with a small amount of an amorphous secondary phase. The best conditions for depositing cubic boron nitride were found to be a substrate temperature of 400°C, bombardment by a 50:50 mixture of argon and nitrogen with a bombarding ion energy of 500 eV and a ratio of bombarding ions to depositing boron atoms of from 1.0 to 1.5 ions per atom.

Magnetic Properties of Epitaxial Mbe-Grown thin Fe3O4 Films on MgO (100)

1995 ◽  
Vol 384 ◽  
Author(s):  
P.A.A. Van Der Heijden ◽  
J.J. Hammink ◽  
PJ.H. Bloemen ◽  
R.M. Wolf ◽  
M.G. Van Opstal ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Ferromagnetic Resonance ◽  
Kerr Effect ◽  
Molecular Beam ◽  
Magnetic Behavior ◽  
Optical Kerr Effect ◽  
Magneto Optical Kerr Effect

ABSTRACTCoherent epitaxial Fe3O4 layers in the range of 0 to 400 Å have been grown by molecular beam epitaxy on single crystal MgO(100) substrates. The magnetic properties were studied by local magneto-optical Kerr effect experiments on a wedge shaped Fe3O4 layer, by ferromagnetic resonance and SQUID. The results show that the magnetic behavior of the Fe3O4 thin films resembles bulk Fe3O4 in the investigated thickness range.

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