Inhomogeneous and wide range of barrier heights at metal/molecular-beam epitaxy GaAs(100) interfaces observed with electrical measurements

1992 ◽  
Vol 10 (4) ◽  
pp. 1932 ◽  
Author(s):  
S. Chang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Measurements ◽  
Barrier Heights ◽  
Wide Range

Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy

1994 ◽  
Vol 339 ◽  
Author(s):  
J. S. Chan ◽  
T. C. Fu ◽  
N. W. Cheung ◽  
N. Newman ◽  
X. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Transmission Line ◽  
Ohmic Contact ◽  
Molecular Beam ◽  
Ion Beam ◽  
Electrical Measurements ◽  
Sapphire Substrates ◽  
Wide Range ◽  
Uv Range

AbstractGallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10∼2 to 10-6 Ω-cm2) which changed with annealing.

Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111)

1988 ◽  
Vol 64 (8) ◽  
pp. 4082-4085 ◽  
Author(s):  
R. W. Fathauer ◽  
T. L. Lin ◽  
P. J. Grunthaner ◽  
P. O. Andersson ◽  
J. M. Iannelli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Barrier Heights ◽  
Effective Barrier

Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
A.V. Voitsekhovskii ◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh ◽  
V.S. Varavin ◽  
S.A. Dvoretskii ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Space Charge Region ◽  
Molecular Beam ◽  
Differential Resistance ◽  
Anodic Oxide ◽  
Electrical Characteristics ◽  
Near Surface ◽  
Wide Range ◽  
Minority Carriers ◽  
Mis Structures

AbstractThe paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg1−xCdxTe films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO2/Si3N4 and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.

Computer Investigations of Features of RHEED Oscillations for GaAs and for Ge

2013 ◽  
Vol 203-204 ◽  
pp. 347-350
Author(s):  
Zbigniew Mitura
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Incident Beam ◽  
Diffraction Theory ◽  
Oscillation Phase ◽  
Dynamical Diffraction ◽  
Wide Range ◽  
Glancing Angle ◽  
Scattering Potential ◽  
Experimental Findings

During molecular beam epitaxy regular oscillations of the intensity of the specularly reflected beam often occur. The phenomenon of such oscillations is still theoretically explained only partially. For example it is not clear why usually the oscillation phase depends strongly on the glancing angle of the incident beam. However, quite recently interesting results were shown in the literature on the features of RHEED oscillations observed during the growth of Ge layers. The phase of oscillations practically stays constant for a wide range of angles. So in this paper, we show results of RHEED dynamical calculations for Ge. They are presented together with results of calculations for GaAs to make analysis executed more complete. It is concluded that experimental findings for Ge for off-symmetry azimuths can be explained using dynamical diffraction theory employing the proportional model (for which the scattering potential of the layer is determined as the potential of the completed layer multiplied by the coverage).

On the substrate temperature dependence of the properties of In0.52Al0.48As/InP structures grown by molecular beam epitaxy

1996 ◽  
Vol 11 (9) ◽  
pp. 2158-2162 ◽  
Author(s):  
S.F. Yoon ◽  
Y. B. Miao ◽  
K. Radhakrishnan ◽  
S. Swaminathan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Strong Dependence ◽  
X Ray Diffraction ◽  
Lattice Constants ◽  
Wide Range ◽  
Energy Peak ◽  
Substrate Temperatures

Growth of In0.52Al0.48As epilayers on InP(100) substrates by molecular beam epitaxy at a wide range of substrate temperatures (470–550 °C) is carried out. Low temperature photoluminescence (PL) and double-axis x-ray diffraction (XRD) measurements showed a strong dependence of the PL and XRD linewidths and lattice mismatch on the substrate temperature. Minimum PL and XRD linewidths and lattice mismatch were found to occur at substrate temperatures of between ≈500 and 520 °C under the beam fluxes used in this study. The XRD intensity ratios (Iepi/Isub) were generally higher within the same substrate temperature range at which the lattice mismatch was the lowest. XRD rocking curves of samples grown at low temperatures showed the main epilayer peak to be composed of smaller discrete peaks, suggesting the presence of regions with different lattice constants in the material. PL spectra taken at increasing temperatures showed the quenching of the main emission peak followed by the evolution of a distinct lower energy peak which is possibly associated with deep lying centers.

scholarly journals Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Abraham Arias ◽  
Nicola Nedev ◽  
Susmita Ghose ◽  
Juan Salvador Rojas-Ramirez ◽  
David Mateos ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Light ◽  
Electrical Characterization ◽  
High Energy ◽  
Ex Situ ◽  
Rf Plasma ◽  
Light Illumination ◽  
Electrical Measurements

β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (RHEED) was used to monitor the surface quality in real time. Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire. Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves. UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm. Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination. The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.

Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs

1996 ◽  
Vol 74 (S1) ◽  
pp. 104-107
Author(s):  
Z. Pang ◽  
P. Mascher ◽  
J. G. Simmons ◽  
D. A. Thompson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Gas Source ◽  
Layer Increase ◽  
Electrode Metal

In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1−xP layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-source molecular beam epitaxy. The Schottky-barrier heights, which generally depend on the gallium fraction, x, and the thickness of the strained GaxIn1−xP layer, increase and are in the range of 0.56–0.65 eV in different contact schemes.

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