Effect of Power on the Properties of SiO2 Films Produced by Plasma-Enhanced Chemical Vapour Deposition

1994 ◽  
Vol 338 ◽  
Author(s):  
Y. Tao ◽  
D. Landheer ◽  
J.-M. Baribeau ◽  
J. E. Hulse ◽  
D.-X. Xu ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Structural Changes ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Transitional Layer ◽  
X Ray ◽  
Infra Red ◽  
Stretching Vibration ◽  
Helium Dilution

ABSTRACTThe effect of power on the properties of SiO2 films produced by direct plasma-enhanced chemical vapor deposition using nitrous oxide and silane with high helium dilution has been investigated. As the power increases the p-etch rate decreases while the frequency of the Si-O-Si stretching vibration measured by Fourier transform infra-red spectroscopy increases. However the refractive index of the films measured by ellipsometry is almost constant as is the electron density measured by low-angle x-ray reflection, indicating that the structural changes of the film with power do not relate to bulk density changes. The x-ray and ellipsometry measurements indicate the existence of a transitional layer with monolayer dimensions at the Si/SiO2 interface.

scholarly journals Graphene prepared on SiC by chemical vapor deposition process at low temperature

2019 ◽  
Vol 70 (4) ◽  
pp. 329-331
Author(s):  
Petr Machac
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Deposition Process ◽  
X Ray ◽  
Layer Graphene

Abstract Graphene preparation by the method of chemical vapour deposition on SiC substrates is described. Despite very low growth temperature (1080 °C) and with use of methane atmosphere, carbon layers in the form of multi-layer graphene were prepared. Graphene quality was verified by means of available analytical methods: Raman spectroscopy, X-ray photoelectron spectroscopy, Van der Paw method.

Routes to 3D conformal solid-state dielectric polymers: electrodeposition versus initiated chemical vapor deposition

2015 ◽  
Vol 2 (5) ◽  
pp. 502-508 ◽  
Author(s):  
Megan B. Sassin ◽  
Jeffrey W. Long ◽  
Jean Marie Wallace ◽  
Debra R. Rolison
Keyword(s):  
Chemical Vapor Deposition ◽  
Solid State ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Initiated Chemical Vapor Deposition ◽  
Carbon Coated ◽  
Conductive Substrates

We show that two distinct methods, electropolymerization and initiated chemical vapour deposition (iCVD), can be adapted to generate ultrathin polymers (30–50 nm thick) at three dimensionally (3D) porous conductive substrates comprising ∼300 μm-thick carbon-coated silica fiber paper (C@SiO2).

Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Sulfide ◽  
Chemical Vapor ◽  
Single Source ◽  
Group 13 ◽  
Single Source Precursors ◽  
Group Iii

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

Effet des paramètres de croissance sur les couches épitaxiales d'InP obtenues par MOCVD (metal-organic chemical vapor deposition) à basse pression

1991 ◽  
Vol 69 (3-4) ◽  
pp. 412-421 ◽  
Author(s):  
P. Cova ◽  
R. A. Masut ◽  
J. F. Currie ◽  
A. Bensaada ◽  
R. Leonelli ◽  
...  
Keyword(s):  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Epitaxial Layers ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The development of a low pressure, horizontal MOCVD (metal-organic chemical vapour deposition) reactor has allowed us to study the effect of phosphine and trimethylindium molar fluxes on the epitaxial growth of InP. Study of the growth rate in the temperature range 550–620 °C shows that the growth can be limited by the reaction kinetics at the surface. Epitaxial layers of good morphological quality have been obtained by reducing the rate of growth even if the growth is limited by the reaction kinetics at the surface. The variation of the electronic mobility with the PH3 molar flux reveals the existence of an optimum mobility region, even with a constant V: III ratio. Photoluminescence experiments carried out on the samples show the good crystallographic quality of the epitaxial layers. Spectra taken in the energy range 0.8–1.2 eV show the evolution of two structures at 0.91 and 1.08 eV that we associate with an antisite PIn and a VIn defect, respectively.[Journal translation]

Chemical vapour deposition and characterization of uniform bilayer and trilayer MoS2crystals

2016 ◽  
Vol 4 (47) ◽  
pp. 11081-11087 ◽  
Author(s):  
Adam Zobel ◽  
Alex Boson ◽  
Peter M. Wilson ◽  
Dmitry S. Muratov ◽  
Denis V. Kuznetsov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor

We report a chemical vapor deposition procedure for MoS2growth from MoO3and S, which yields predominantly bilayer and trilayer MoS2triangular islands.

Structure and photoluminescence of boron-doped carbon nanoflakes grown by hot filament chemical vapour deposition

2015 ◽  
Vol 3 (5) ◽  
pp. 1106-1112 ◽  
Author(s):  
Biben Wang ◽  
Kostya (Ken) Ostrikov ◽  
Timothy van der Laan ◽  
Ruiwen Shao ◽  
Lin Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Carbide ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Carbon Nanoflakes ◽  
Boron Source ◽  
Hot Filament

Boron-doped carbon nanoflakes were directly synthesized by hot filament chemical vapor deposition, nontoxic boron carbide was used as the boron source.

New precursors for organometallic chemical vapor deposition of rhodium

1991 ◽  
Vol 69 (1) ◽  
pp. 108-110 ◽  
Author(s):  
R. Kumar ◽  
R. J. Puddephatt
Keyword(s):  
Chemical Vapor Deposition ◽  
Key Words ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Organic Product ◽  
Carbon Impurities

The η-cyclopentadienyl (Cp) and η-allyl (C3H5) complexes [RhCp(CO)2], [RhCp(cod)] where cod = 1,5-cyclooctadiene, [Rh(η-C3H5)(CO)2], and [Rh(η-C3H5)3] have been shown to be useful precursors for the chemical vapour deposition (CVD) of rhodium films. The rhodium films contain carbon impurities but these can be greatly reduced if CVD is carried out in the presence of hydrogen. The films adhere well to a silicon substrate. The pyrolysis of [RhCp(CO)2] gives CO and [Rh2Cp2(CO)2(μ-CO)] and [Rh3Cp3(μ-CO)3] at intermediate stages. Pyrolysis of [Rh(η-C3H5)3] or [Rh(η-C3H5)(CO)2] gives 1,5-hexadiene as the only organic product, but similar pyrolysis in the presence of hydrogen gives much propene as well as 1,5-hexadiene. Key words: rhodium, deposition, allyl, cyclopentadienyl.

Si1−xGexY Alloy Nanocluster Materials Chemical Vapor Deposition of Si2H6Ge2H6 Mixtures in Zeolite Y

1994 ◽  
Vol 358 ◽  
Author(s):  
Ömer Dag ◽  
Alex Kuperman ◽  
Geoffrey A. Ozin
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Electronic Structures ◽  
Vapour Deposition ◽  
Zeolite Y ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Compositional Range

ABSTRACTSi1−xGexY alloy nanocluster materials are synthesized by the chemical vapour deposition of Si2H6/Ge2H6 mixtures within the diamond lattice of 13Å supercages in acid zeolite Y. A multianalytical approach to the study of these Si1−xGexY nanomaterials over the full compositional range 0<x<1 provides information concerning the mode of formation, geometric and electronic structures, trends in the optical properties of the encapsulated alloy nanoclusters.

scholarly journals Nanotubes and other allotropic carbon forms by chemical vapor deposition on an inconel surface

2019 ◽  
Vol 66 (1 Jan-Feb) ◽  
pp. 105-109
Author(s):  
F. Pérez-Bustamante ◽  
F. Avalos-Belmontes ◽  
F. Ramos-Cano ◽  
R. Pérez-Bustamante
Keyword(s):  
Vapor Deposition ◽  
Vapour Deposition ◽  
Graphene Nanoribbons ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Ethanol Solution ◽  
Electronic Microscopy ◽  
Synthesis Conditions ◽  
Inconel 600 ◽  
Carbon Structures

Allotropic carbon forms such as fullerenes, nanotubes and graphenes, have received a notable attention by the scientific community due to their unique configuration and interesting chemical and physical properties. In this respect, in this work, carbon nanotubes were synthesized through chemical vapour deposition. The reaction was carried out in tubular furnace by the catalytic reaction of ferrocene/ethanol solution onto an Inconel 600 surface and by the variation on the synthesis conditions for their production. The presence of double- and few-walled nanotubes grown in bundle arrays was observed. However, additionally, the presence of other carbon structures such as graphenes, graphitic onions and graphene nanoribbons were observed through electronic microscopy.

scholarly journals Active Phase of Cobalt Oxide (Co3O4) as a Promising Catalyst for Graphene Growth by Alcohol Catalytic Chemical Vapor Deposition

2020 ◽  
Vol 8 (6) ◽  
pp. 2061-2065
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Annealing Temperature ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Graphene Growth ◽  
Grown Graphene

The presence of active catalyst during graphene growth by alcohol catalytic chemical vapour deposition is a compulsory. This study is aimed to validate the effect of annealing temperature for the formation of active cobalt oxide (Co3O4 ) film on the graphene growth by alcohol catalytic chemical vapour deposition technique. Active Co3O4 film was prepared on silicon wafers by sol-gel process, using cobalt acetate tetrahydrate as the precursor compound and absolute ethanol as the solvent. The active Co3O4 phase was achieved by annealing process at 450, 500, 550 and 600 °C. The graphene is grown from active Co3O4 film under 900 °C of chemical vapor deposition (CVD) processing temperature for 5 minutes. The obtained Co3O4 was characterized by x-ray diffraction and Raman spectroscopy. The as-grown graphene from active Co3O4 film annealed at 450 ⁰C was characterized by Raman spectroscopy and field emission scanning electron microscope (FESEM). The results demonstrate that spinel type cubic structure of Co3O4 could be produced at the varied annealing temperatures but the optimum XRD result was at 500 ⁰C annealing temperature. The presence of active Co3O4 phase was supported with the exhibited peaks of four Raman-active phonon modes in the Raman spectra. The quality of as-grown graphene determined from the ratio of 2D-band over G-band intensities is 1.010; an indication of few layers of graphene. Active Co3O4 film is able to produce good quality of graphene comparable with Ni and Cu catalysts. And graphene can be used in many devices, including electronic device, energy storage device, power device, and others.

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