X-Ray Strain Measurements in Fine-Line Patterned AL-CU Films

1994 ◽  
Vol 338 ◽  
Author(s):  
M. A. Marcus ◽  
W.F. Flood ◽  
R. A. Cirelli ◽  
R. C. Kistler ◽  
N. A. Ciampa ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Yield Stress ◽  
Compressive Stress ◽  
Temperature Dependent ◽  
Strain Measurements ◽  
Fine Line ◽  
X Ray ◽  
Cu Films

ABSTRACTIn order to better understand the mechanics of metallization structures having very fine features, we performed in-situ, temperature-dependent X-ray strain measurements on Al-Cu films patterned into gratings with linewidths of 0.2-0.8μm, with and without a dielectric covering In comparison with earlier work on coarser structures, we find larger strains and less hysteresis, indicating an increased yield stress. The stress in unpassivated lines is almost independent of the linewidth. The slope of the stress/temperature curves for passivated lines increases with decreasing linewidth, so that the compressive stress at 500°C reaches 900MPa for the narrowest lines. The tensile stress at RT is smaller for the narrower lines, suggesting that these lines may not stress-void as much as wider ones. The significance of these results for stress voiding and electromigration will be discussed.

A facile heating cell forin situtransmittance and fluorescence X-ray absorption spectroscopy investigations

2013 ◽  
Vol 21 (1) ◽  
pp. 165-169 ◽  
Author(s):  
Pengfei An ◽  
Caihao Hong ◽  
Jing Zhang ◽  
Wei Xu ◽  
Tiandou Hu
Keyword(s):  
Absorption Spectroscopy ◽  
Ohmic Heating ◽  
Inert Atmosphere ◽  
Temperature Dependent ◽  
Structural Mechanism ◽  
X Ray ◽  
Novel Approach ◽  
Heat Shielding ◽  
X Ray Absorption

A facile heating cell has been designed forin situtransmittance and fluorescence X-ray absorption spectroscopy (XAS) measurements up to 1273 K under vacuum or an inert atmosphere. These high temperatures are achieved using a tantalum heating element by ohmic heating. Because of the small specific heat capacity, the temperature can be changed in a matter of minutes from room temperature to high temperature. Furthermore, a commercial power controller was adapted to provide stable temperature control. The construction of the heat shielding system provides a novel approach to reducing the beam's path length and the cell's size. The cell is inexpensive and easy to build. Its performance was evaluated byin situXAS measurements of the temperature-dependent structure of ceria nanocrystals. Some preliminary results for the structural mechanism in ceria nanocrystal redox applications are given.

Molecular motions of a tetraphenylethylene-derived AIEgen directly monitored through in situ variable temperature single crystal X-ray diffraction

CrystEngComm ◽  
2021 ◽  
Author(s):  
Wei Meng ◽  
Lin Du ◽  
Lin Sun ◽  
Lian Zhou ◽  
Xiaopeng Xuan ◽  
...  
Keyword(s):  
Single Crystal ◽  
Phenyl Ring ◽  
Functional Group ◽  
Variable Temperature ◽  
Molecular Motions ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Conformation Changes

One organic functional group was introduced to distinguish the four phenyl ring of tetraphenylethylene, and the In situ temperature-dependent crystal structures were determined to exhibit the conformation changes of tert-butyl...

Formation of Intermetallics and Grain Boundary Diffusion in Cu-Al and Au-Al Thin Film Couples

1981 ◽  
Vol 10 ◽  
Author(s):  
J. M. Vandenberg ◽  
F. J. A. Den Broeder ◽  
R. A. Hamm
Keyword(s):  
Thin Film ◽  
Hexagonal Phase ◽  
Interface Reaction ◽  
Aluminum Film ◽  
Temperature Dependent ◽  
X Ray ◽  
Wide Range ◽  
Al Thin Film ◽  
Rich Side

An in situ annealing X-ray study was applied to Cu-Al thin film couples over a wide range of copper-to-aluminum film ratios. This new technique, which has been previously described for a study on the Au-Al thin film system, enables us to make a temperature-dependent photographic X-ray analysis. The present study indicated that only a limited number of the wide variety of bulk phases form in the Cu-Al thin film interface, while some of these phases in the interface are transient. In the transient stages of the interface reaction, the f.c.c.-ordered phase β-Cu3A1 grows over the entire range of copper-to-aluminum film ratios after the first nucleation of CuA12, indicating a two-step nucleation reaction. On the aluminum-rich side, this phase transforms to a new ordered hexagonal phase β′. It could be interpreted as a superlattice of the metastable hexagonal ω phase occurring in zirconium-based alloys. The end phases are CuA1 and CuAl2.

Evolution of the structural orientation in polyacrylonitrile precursors during stabilization revealed by in-situ synchrotron wide-angle X-ray diffraction and polarized infrared spectroscopy

2016 ◽  
Vol 29 (10) ◽  
pp. 1158-1164 ◽  
Author(s):  
Yiran Zhou ◽  
Xu Han ◽  
Xiaoyuan Hu ◽  
Lianghua Xu ◽  
Weiyu Cao
Keyword(s):  
Infrared Spectroscopy ◽  
Thermal Relaxation ◽  
Thermal Stabilization ◽  
Orientation Factor ◽  
Wide Angle ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Polarized Infrared Spectroscopy

Evolution of the orientation structures of polyacrylonitrile (PAN) precursors during thermal stabilization was investigated on the basis of in situ temperature-dependent measurements including synchrotron wide-angle X-ray diffraction and polarized infrared spectroscopy. The results indicated that the Hermans orientation factor of PAN crystallites increased firstly and then decreased in the process of stabilization, while the orientation of molecular chains showed a two-stage decrease. These were mainly attributed to the thermal relaxation of molecular chains and the cyclization reactions, which also resulted in the physical shrinkage as well as the chemical shrinkage apparently observed from the thermal mechanical curves of the precursor.

Stress Limited Scaling of Ge2Sb2Te5

2010 ◽  
Vol 1251 ◽  
Author(s):  
Robert Edward Simpson ◽  
Milos Krbal ◽  
Paul Fons ◽  
Alex Kolobov ◽  
Tomoya Uruga ◽  
...  
Keyword(s):  
Phase Change ◽  
Compressive Stress ◽  
Crystallization Temperature ◽  
Temperature Dependent ◽  
Dominant Effect ◽  
X Ray ◽  
Bulk Crystallization ◽  
Crystallisation Temperature

AbstractThe influence of stress on the phase change behaviour of Ge2Sb2Te5 encapsulated by ZnS-SiO2 and TiN is investigated using temperature dependent Extended X-ray Asbsorption Fines Structure and Ellipsometry to determine the crystallisation temperature. The encapsulation material surrounding the Ge2Sb2Te5 has an increasingly dominant effect on the material's ability to change phase and can cause a profound increase in its crystallization temperature. We have experimentally shown that the increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress we have maintained the bulk crystallization temperature in Ge2Sb2Te5 films just 2 nm thick.

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