Formation of Intermetallics and Grain Boundary Diffusion in Cu-Al and Au-Al Thin Film Couples

1981 ◽  
Vol 10 ◽  
Author(s):  
J. M. Vandenberg ◽  
F. J. A. Den Broeder ◽  
R. A. Hamm
Keyword(s):  
Thin Film ◽  
Hexagonal Phase ◽  
Interface Reaction ◽  
Aluminum Film ◽  
Temperature Dependent ◽  
X Ray ◽  
Wide Range ◽  
Al Thin Film ◽  
Rich Side

An in situ annealing X-ray study was applied to Cu-Al thin film couples over a wide range of copper-to-aluminum film ratios. This new technique, which has been previously described for a study on the Au-Al thin film system, enables us to make a temperature-dependent photographic X-ray analysis. The present study indicated that only a limited number of the wide variety of bulk phases form in the Cu-Al thin film interface, while some of these phases in the interface are transient. In the transient stages of the interface reaction, the f.c.c.-ordered phase β-Cu3A1 grows over the entire range of copper-to-aluminum film ratios after the first nucleation of CuA12, indicating a two-step nucleation reaction. On the aluminum-rich side, this phase transforms to a new ordered hexagonal phase β′. It could be interpreted as a superlattice of the metastable hexagonal ω phase occurring in zirconium-based alloys. The end phases are CuA1 and CuAl2.

Kinetics of Phase Formation in Cu-Al Thin Films Couples Studied by In-Situ X-Ray and Rutherford Backscattering Analysis.

1983 ◽  
Vol 25 ◽  
Author(s):  
R. A. Hamm ◽  
J. M. Vandenberg
Keyword(s):  
Thin Film ◽  
High Vacuum ◽  
Interface Reaction ◽  
Annealing Treatment ◽  
Rutherford Backscattering ◽  
X Ray ◽  
Different Temperatures ◽  
Al Thin Film ◽  
Backscattering Analysis

X-ray diffraction (XRD) and Rutherford backscattering analysis (RBS) have been used independently to study the interface reaction of copperaluminum thin film couples during in-situ annealing in the temperature range 157°–220°C. For the X-ray studies a high vacuum annealing system was constructed on a Huber-Guinier thin film goniometer base1. This system enabled us to monitor the thin film interface reaction via changes of integrated X-ray intensities during the annealing treatment. RBS analysis was carried out with an existing in-situ heating stage. Using both techniques isothermal annealing experiments were carried out for four different temperatures. For this study 900Å Cu/1600Å Al and 1800Å Cu/3200Å Al thin film couples were prepared by sequential evaporation onto water cooled oxidized <111> silicon and MgO substrates.

Formation of New Interfacial Phases in Bimetallic Thin Film Couples Studied by in Situ Annealing X-ray Diffraction

1985 ◽  
Vol 54 ◽  
Author(s):  
J. M. Vandenberg
Keyword(s):  
Thin Film ◽  
Interface Reaction ◽  
Magnetic Alloy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Metal ◽  
Glancing Angle ◽  
Al Thin Film ◽  
New Phase

ABSTRACTInterfacial reactions in bimetallic thin films have been studied by in-situ glancing angle X-ray diffraction which enables us to monitor all stages of the interface reaction in the temperature range 35 °-950° C Results are presented on new phase formation in evaporated Ag-Al and Cu-Al thin film couples, sputtered bimetallic Nb-Sn and Nb-Pb films and magnetic alloy films. New phases as well as phase transitions which are not known to exist in the bulk phase diagrams, were observed. These results provided evidence that phases other than those predicted by the first nucleation rule, grow during the initial metal-metal thin film interface reaction.

An in situ X-ray study of phase formation in CuAl thin film couples

1982 ◽  
Vol 97 (4) ◽  
pp. 313-323 ◽  
Author(s):  
J.M. Vandenberg ◽  
R.A. Hamm
Keyword(s):  
Thin Film ◽  
Phase Formation ◽  
X Ray ◽  
Al Thin Film

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

An x‐ray optical study of layered phase growth in Au‐Al thin film couples

1980 ◽  
Vol 51 (9) ◽  
pp. 4808-4812 ◽  
Author(s):  
A. Wagendristel ◽  
H. Schurz ◽  
E. Ehrmann‐Falkenau ◽  
H. Bangert
Keyword(s):  
Thin Film ◽  
Optical Study ◽  
Phase Growth ◽  
X Ray ◽  
Al Thin Film

Anin situatomic force microscope for normal-incidence nanofocus X-ray experiments

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscope ◽  
High Speed ◽  
Normal Incidence ◽  
Organic Thin Film ◽  
X Ray ◽  
Atomic Force ◽  
Synchrotron Beamlines

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.

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