Studies on the Interface of TiN/n-GaAs

1994 ◽  
Vol 337 ◽  
Author(s):  
Ho Jie ◽  
Jin Gaolong ◽  
Lu Liwu ◽  
Xu Zhenjia ◽  
Zhang Lichun
Keyword(s):  
Energy Level ◽  
Hall Effect ◽  
Refractory Metal ◽  
Schottky Contacts ◽  
Electrical Performance ◽  
Metal Nitrides ◽  
Donor Level ◽  
Acceptor Level ◽  
Type Layer

ABSTRACTRecent reports on refractory metal nitrides/n-GaAs Schottky contacts have demonstrated that improved electrical performance can be obtained after annealing at temperature between 750 and 850°C . It is thought that a p+-type layer should be responsible for this phenomenon, which may be generated by N or N related defects. In this paper, the role of nitrogen in SI-GaAs and n-GaAs has been investigated by Hall effect and DLTS measurements. No evidence of the formation of a p+-type layer has been observed. A deep energy level of Ec-0.36eV which is thought to be related to N and an enhanced effect of N on the density of EL2 level were observed. DLTS and SIMS techniques were used to study the interface of TiN/n-GaAs Schottky contacts. The Ti3+(3d1)/Ti2+(3d2) single acceptor level at Ec-0.21 eV was observed, but the EL2 donor level is dominant. Combining the experimental results, a discussion is made about the reasons for the improvements of electrical performance after annealing.

The Role of Hydrogen in Semi-Insulating Inp

1998 ◽  
Vol 513 ◽  
Author(s):  
Yujie Han ◽  
Xunlang Liu ◽  
Jinghua Jiao ◽  
Jiajun Qian ◽  
Yonghai Chen ◽  
...  
Keyword(s):  
Energy Level ◽  
Energy Gap ◽  
Electronic States ◽  
Extended Defects ◽  
Acceptor Level ◽  
Hydrogen Atoms ◽  
Deep Acceptor ◽  
Deep Acceptor Level ◽  
Deep Donor

ABSTRACTComplexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimer and other infrared absorption lines, tentatively be assigned to hydrogen related defects were investigated by FTIR. Hydrogen can passivate imperfections, thereby eliminating detrimental electronic states from the energy bandgap.Incorporated hydrogen can introduce extended defects and generate electrically-active defects. Hydrogen also can acts as an actuator for creating of antistructure defects. Isolated hydrogen related defects(e.g. H12+) may play an important role in the conversion of the annealed wafers from semiconducting to the semi-insulating behavior. H2+ may be a deep donor, whose energy level is very near the iron deep acceptor level in the energy gap.

scholarly journals Investigation of dopant centres dominating the conduction process in the bulk of un-doped GaSb

2019 ◽  
Vol 13 (4) ◽  
pp. 315-327
Author(s):  
Megersa Wodajo Shura
Keyword(s):  
Energy Level ◽  
Hall Effect ◽  
Fermi Energy ◽  
Activation Energies ◽  
Acceptor Level ◽  
Level System ◽  
Fermi Energy Level ◽  
Majority Carrier ◽  
Temperature Regimes ◽  
Hall Effect Measurements

Abstract In this paper, first, the theoretical description of the effects of the dopant densities and the activation energies on the ionization densities, the chemical potentials corresponding to each dopant levels, the majority carrier densities and the Fermi-energy levels in one-acceptor-level system, highly compensated system and two-acceptor-level system are described in detail. Upon fitting the theoretical to the experimental results obtained by the temperature-dependent Hall effect measurements for three samples of un-doped GaSb, the dopant densities and the activation energies for a system with different dopants are investigated. The obtained results revealed that the dopant activation energy has less (no) effect on the Fermi-energy level and the majority carrier density in the highest temperature regimes. The doping density has also less (no) effect on the Fermi-energy level in the lowest temperature regimes. Finally, fitting of the theoretical to the experimental Hall effect measurements results confirmed the presence of three acceptor and one donor levels dominating the majority carrier densities at different temperature regions in all the samples of un-doped GaSb semiconductor.

Schottky contacts of refractory metal nitrides on gallium nitride using reactive sputtering

Vacuum ◽  
2010 ◽  
Vol 84 (12) ◽  
pp. 1439-1443 ◽  
Author(s):  
Jin-Ping Ao ◽  
Asato Suzuki ◽  
Kouichi Sawada ◽  
Satoko Shinkai ◽  
Yoshiki Naoi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Refractory Metal ◽  
Reactive Sputtering ◽  
Schottky Contacts ◽  
Metal Nitrides

scholarly journals The role of nitrogen in transition-metal nitrides in electrochemical water splitting

2021 ◽  
Author(s):  
Rabia Jamil ◽  
Rashad Ali ◽  
Suraj Loomba ◽  
Jian Xian ◽  
Muhammad Yousaf ◽  
...  
Keyword(s):  
Transition Metal ◽  
Water Splitting ◽  
Metal Nitrides ◽  
Transition Metal Nitrides ◽  
Electrochemical Water Splitting

scholarly journals Role of Bi3+ ions on structural, optical, photoluminescence and electrical performance of Cd0.9-xZn0.1BixS QDs

2021 ◽  
Vol 3 (7) ◽  
Author(s):  
A. Krishnamoorthy ◽  
P. Sakthivel ◽  
I. Devadoss ◽  
V. M. Anitha Rajathi
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Electrical Performance ◽  
Chemical Route ◽  
Red Emission ◽  
The Mean ◽  
Cubic Structure ◽  
Cyclic Voltammetry Analysis

AbstractIn this work, the Cd0.9-xZn0.1BixS QDs with different compositions of Bi3+ ions (0 ≤ x ≤ 0.05) were synthesized using a facile chemical route. The prepared QDs were characterized for analyzing the structural, morphological, elemental, optical, band gap, photoluminescence and electrochemical properties. XRD results confirmed that the Cd0.9-xZn0.1BixS QDs have a cubic structure. The mean crystallite size was increased from ~ 2 to ~ 5 nm for the increase of Bi3+ ions concentration. The optical transmittance behavior was decreased with increasing Bi3+ ions. The scanning electron microscope images showed that the prepared QDs possessed agglomerated morphology and the EDAX confirmed the presence of doped elements as per stoichiometry ratio. The optical band gap was slightly blue-shifted for initial substitution (Bi3+  = 1%) of Bi3+ ions and red-shifted for further increase of Bi3+ compositions. The optical band gap was ranged between 3.76 and 4.0 eV. High intense red emission was received for Bi3+ (1%) doped Zn:CdS QDs. The red emission peaks were shifted to a higher wavelength side due to the addition of Bi3+ ions. The PL emission on UV-region was raised for Bi3+ (1%) and it was diminished. Further, a violet (422 nm) and blue (460 nm) emission were received for Bi3+ ions doping. The cyclic voltammetry analysis showed that Bi3+ (0%) possessed better electrical properties than other compositions of Bi3+ ions.

Sign reversal of anomalous Hall effect derived from the transformation of scattering effect in cluster-assembled Ni0.8Fe0.2 nanostructural films

Nanoscale ◽  
2021 ◽  
Author(s):  
Ning Jiang ◽  
Bo Yang ◽  
Yulong Bai ◽  
Yaoxiang Jiang ◽  
Shifeng Zhao
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Sign Reversal ◽  
Surface And Interface ◽  
Scattering Effect ◽  
Single Substance ◽  
Interface Scattering ◽  
Hall Effects

Both surface and interface scattering induced a sign reversal of anomalous Hall effects (AHE) in a few heterostructures. The sign reversal exiting in a single-substance can clarify the role of...

scholarly journals Real-space observation of ferroelectrically induced magnetic spin crystal in SrRuO3

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. D. Seddon ◽  
D. E. Dogaru ◽  
S. J. R. Holt ◽  
D. Rusu ◽  
J. J. P. Peters ◽  
...  
Keyword(s):  
Hall Effect ◽  
Density Functional ◽  
Hysteresis Loops ◽  
Real Space ◽  
Zero Field ◽  
Force Microscopy ◽  
Switching Regime ◽  
Conflicting Evidence ◽  
Magnetic Spin

AbstractUnusual features in the Hall Resistivity of thin film systems are frequently associated with whirling spin textures such as Skyrmions. A host of recent investigations of Hall Hysteresis loops in SrRuO3 heterostructures have provided conflicting evidence for different causes for such features. We have constructed an SrRuO3-PbTiO3 (Ferromagnetic – Ferroelectric) bilayer that exhibits features in the Hall Hysteresis previously attributed to a Topological Hall Effect, and Skyrmions. Here we show field dependent Magnetic Force Microscopy measurements throughout the key fields where the ‘THE’ presents, revealing the emergence to two periodic, chiral spin textures. The zero-field cycloidal phase, which then transforms into a ‘double-q’ incommensurate spin crystal appears over the appearance of the ‘Topological-like’ Hall effect region, and develop into a ferromagnetic switching regime as the sample reaches saturation, and the ‘Topological-like’ response diminishes. Scanning Tunnelling Electron Microscopy and Density Functional Theory is used to observe and analyse surface inversion symmetry breaking and confirm the role of an interfacial Dzyaloshinskii–Moriya interaction at the heart of the system.

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