The role of the interface in refractory metal alloy composites

1991 ◽  
Author(s):  
Toni Grobstein ◽  
Hee Mann Yun
Keyword(s):  
Refractory Metal ◽  
Metal Alloy ◽  
Refractory Metal Alloy

Alloy Chemical Comparison of the Refractory Metal - Noble Metal Phase Diagrams T5-T10 (T5 = V, Nb, Ta; T10 = Pd, Pt)

1982 ◽  
Vol 19 ◽  
Author(s):  
R. Waterstrat ◽  
B.C. Giessen
Keyword(s):  
Phase Diagrams ◽  
Noble Metal ◽  
Refractory Metal ◽  
Metal Alloy ◽  
Metal Phase

ABSTRACTThe six T5-Tl0 metal alloy phase diagrams containing Pd or Pt have now all been established. The alloy phases occurring in these systems are tabulated and reviewed here with respect to their structures.

An analysis of the role of high energy neutral bombardment in longthrow/collimated sputtering of refractory metal barrier layers

1998 ◽  
Vol 84 (9) ◽  
pp. 5315-5325 ◽  
Author(s):  
T. Smy ◽  
R. V. Joshi ◽  
N. Tait ◽  
S. K. Dew ◽  
M. J. Brett
Keyword(s):  
Refractory Metal ◽  
High Energy ◽  
Barrier Layers ◽  
Metal Barrier

scholarly journals An Investigation of the Miscibility Gap Controlling Phase Formation in Refractory Metal High Entropy Superalloys via the Ti-Nb-Zr Constituent System

Metals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1244
Author(s):  
Tamsin E. Whitfield ◽  
George J. Wise ◽  
Ed J. Pickering ◽  
Howard J. Stone ◽  
Nicholas G. Jones
Keyword(s):  
Spinodal Decomposition ◽  
Phase Field ◽  
Refractory Metal ◽  
Miscibility Gap ◽  
High Entropy ◽  
Long Duration ◽  
Three Phase ◽  
Miscibility Gaps ◽  
Bcc Phase

Refractory metal high entropy superalloys (RSAs) have been heralded as potential new high temperature structural materials. They have nanoscale cuboidal bcc+B2 microstructures that are thought to form on quenching through a spinodal decomposition process driven by the Ta-Zr or Nb-Zr miscibility gaps, followed by ordering of one of the bcc phases. However, it is difficult to isolate the role of different elemental interactions within compositionally complex RSAs. Therefore, in this work the microstructures produced by the Nb-Zr miscibility gap within the compositionally simpler Ti-Nb-Zr constituent system were investigated. A systematic series of alloys with compositions of Ti5NbxZr95−x (x = 25–85 at.%) was studied following quenching from solution heat treatment and long duration thermal exposures at 1000, 900 and 700 °C for 1000 h. During exposures at 900 °C and above the alloys resided in a single bcc phase field. At 700 °C, alloys with 40–75 at.% Nb resided within a three phase bcc + bcc + hcp phase field and a large misfit, 4.7–5%, was present between the two bcc phases. Evidence of nanoscale cuboidal microstructures was not observed, even in slow cooled samples. Whilst it was not possible to conclusively determine whether a spinodal decomposition occurs within this ternary system, these insights suggest that Nb-Zr interactions may not play a significant role in the formation of the nanoscale cuboidal RSA microstructures during cooling.

Studies on the Interface of TiN/n-GaAs

1994 ◽  
Vol 337 ◽  
Author(s):  
Ho Jie ◽  
Jin Gaolong ◽  
Lu Liwu ◽  
Xu Zhenjia ◽  
Zhang Lichun
Keyword(s):  
Energy Level ◽  
Hall Effect ◽  
Refractory Metal ◽  
Schottky Contacts ◽  
Electrical Performance ◽  
Metal Nitrides ◽  
Donor Level ◽  
Acceptor Level ◽  
Type Layer

ABSTRACTRecent reports on refractory metal nitrides/n-GaAs Schottky contacts have demonstrated that improved electrical performance can be obtained after annealing at temperature between 750 and 850°C . It is thought that a p+-type layer should be responsible for this phenomenon, which may be generated by N or N related defects. In this paper, the role of nitrogen in SI-GaAs and n-GaAs has been investigated by Hall effect and DLTS measurements. No evidence of the formation of a p+-type layer has been observed. A deep energy level of Ec-0.36eV which is thought to be related to N and an enhanced effect of N on the density of EL2 level were observed. DLTS and SIMS techniques were used to study the interface of TiN/n-GaAs Schottky contacts. The Ti3+(3d1)/Ti2+(3d2) single acceptor level at Ec-0.21 eV was observed, but the EL2 donor level is dominant. Combining the experimental results, a discussion is made about the reasons for the improvements of electrical performance after annealing.

scholarly journals The role of low Gd concentrations on magnetisation behaviour in rare earth:transition metal alloy films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
O. Inyang ◽  
A. Rafiq ◽  
C. Swindells ◽  
S. Ali ◽  
D. Atkinson
Keyword(s):  
Metal Alloy ◽  
Alloy Films

Silicidation Mechanism of Co/(Refractory-Metal) Bilayer and Epitaxial Growth of CoSi2 on Si(100) Substrate

1993 ◽  
Vol 320 ◽  
Author(s):  
Jeong S. Byun ◽  
Woo S. Kim ◽  
Min S. Choi ◽  
Ho J. Cho ◽  
Hyeong J. Klm
Keyword(s):  
Epitaxial Growth ◽  
Refractory Metal ◽  
Reaction Rate ◽  
Metal Layer ◽  
Oxidation Potential ◽  
Native Oxide ◽  
Main Role ◽  
Si Substrate

ABSTRACTThe structures of CoSi2 formed from the bilayer of Co/(refractory metal) have been investigated. For a layer reversal and epitaxial growth of CoSi2 on Si substrate, the silicidation temperature of interposed refractory metal should be higher than that of Co and the oxidation potential of the refractory should also be negatively higher than that of Si to remove the native oxide on Si substrate. The main role of the refractory metal layer in the epitaxial growth of CoSi2 is to limit the Co diffusion to Si substrate, controlling the Co-Si reaction rate. Thus Co atoms are able to locate their stable positions with the lowest energy in CoSi2 lattice.

The role of dislocations in high-strain-rate superplasticity of an Al–Ni–misch metal alloy

1998 ◽  
Vol 46 (13) ◽  
pp. 4469-4478 ◽  
Author(s):  
Y Umakoshi ◽  
W Fujitani ◽  
T Nakano ◽  
A Inoue ◽  
K Ohtera ◽  
...  
Keyword(s):  
High Strain Rate ◽  
Strain Rate ◽  
High Strain ◽  
Metal Alloy ◽  
Misch Metal
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