Using Molecular-Beam Mass Spectrometry to Study the Pecvd of Diamondlike Carbon Films

1993 ◽  
Vol 334 ◽  
Author(s):  
I.B. Graff ◽  
R.A. Pugliese ◽  
P.R. Westmoreland
Keyword(s):  
Mass Spectrometry ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Total Flow ◽  
Measured Concentration ◽  
Molecular Beam Mass Spectrometry ◽  
Diamondlike Carbon

AbstractMolecular-beam mass spectrometry has been used to study plasma-enhanced chemical vapor deposition (PECVD) of diamondlike carbon films. A threshold-ionization technique was used to identify and quantify species in the plasma. Mole fractions of H, H2, CH4, C2H2, C2H6 and Ar were measured in an 83.3% CH4/Ar mixture at a pressure of 0.1 torr and a total flow of 30 sccm. Comparisons were made between mole fractions measured at plasma powers of 25W and 50W. These results were compared to measured concentration profiles and to film growth rates.

Molecular Beam Mass Spectrometry Studies of the Thermal Decomposition of Tetrakis(dimethylamino)Titanium

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela C. Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Flow Reactor ◽  
Chemical Vapor ◽  
Molecular Beam Mass Spectrometry ◽  
Gas Phase Chemistry ◽  
Temperature Rate ◽  
Phase Chemistry

AbstractTetrakis(dimethylamino)titanium (TDMAT) is an important precursor for TiN, TiCN, and TiSiN thin films in chemical vapor deposition. In order to better understand how the gas phase chemistry influences the formation of these films, the decomposition of TDMAT has been studied in a high-temperature flow reactor (HTFR) by molecular beam mass spectrometry (MBMS). Two kinetic regimes have been observed as a function of temperature. Rate expressions and mechanistic implications will be presented. Further studies are in progress to identify the gas phase species relevant to the decomposition mechanism of TDMAT.

scholarly journals Molecular Beam Mass Spectrometry Studies of Chemical Vapor Deposition of Diamond

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2231-2239 ◽  
Author(s):  
Wen L. Hsu ◽  
Mark C. McMaster ◽  
Michael E. Coltrin ◽  
David S. Dandy
Keyword(s):  
Mass Spectrometry ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Molecular Beam Mass Spectrometry

The Structure of Silicon Thin Films Grown on Sapphire by MBE

1987 ◽  
Vol 107 ◽  
Author(s):  
M. E. Twigg ◽  
J. G. Pellegrino ◽  
E. D. Richmond
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Transmission Electron

AbstractFrom a series of imaging experiments performed in the transmission electron microscope (TEM), it is apparent that for silicon grown on sapphire (SOS) by molecular beam epitaxy (MBE), silicon thin film growth on the (1012) sapphire plane resembles that observed for analogous films grown by chemical vapor deposition (CVD). At 900°C very thin (150A) silicon films grow as islands with either the (001) or (110) planes parallel to the (1012) plane; it is also found that most of the silicon grows as (001) rather than (110) islands, as is true for CVD-grown SOS. The orientation, however, of (110) islands occuring in this MBE-grown SOS sample differs from that of (110) islands occuring in CVD-grown SOS. By following this initial 150A of growth with 2500A of silicon deposited at. 750°C, a continuous (001) film was grown in which microtwins appear to be the predominant defect. The MBE-grown SOS also resembles that grown by CVD in that the microtwin densities associated with the “majority” and “minority” twinning systems are influenced by the orientation of the sapphire substrate.

Sign in / Sign up

Export Citation Format

Share Document