Application of molecular beam mass spectrometry to chemical vapor deposition studies

1992 ◽  
Vol 63 (9) ◽  
pp. 4138-4148 ◽  
Author(s):  
W. L. Hsu ◽  
D. M. Tung
Keyword(s):  
Mass Spectrometry ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Molecular Beam Mass Spectrometry

scholarly journals Molecular Beam Mass Spectrometry Studies of Chemical Vapor Deposition of Diamond

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2231-2239 ◽  
Author(s):  
Wen L. Hsu ◽  
Mark C. McMaster ◽  
Michael E. Coltrin ◽  
David S. Dandy
Keyword(s):  
Mass Spectrometry ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Molecular Beam Mass Spectrometry

Using Molecular-Beam Mass Spectrometry to Study the Pecvd of Diamondlike Carbon Films

1993 ◽  
Vol 334 ◽  
Author(s):  
I.B. Graff ◽  
R.A. Pugliese ◽  
P.R. Westmoreland
Keyword(s):  
Mass Spectrometry ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Total Flow ◽  
Measured Concentration ◽  
Molecular Beam Mass Spectrometry ◽  
Diamondlike Carbon

AbstractMolecular-beam mass spectrometry has been used to study plasma-enhanced chemical vapor deposition (PECVD) of diamondlike carbon films. A threshold-ionization technique was used to identify and quantify species in the plasma. Mole fractions of H, H2, CH4, C2H2, C2H6 and Ar were measured in an 83.3% CH4/Ar mixture at a pressure of 0.1 torr and a total flow of 30 sccm. Comparisons were made between mole fractions measured at plasma powers of 25W and 50W. These results were compared to measured concentration profiles and to film growth rates.

Molecular Beam Mass Spectrometry Studies of the Thermal Decomposition of Tetrakis(dimethylamino)Titanium

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela C. Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Flow Reactor ◽  
Chemical Vapor ◽  
Molecular Beam Mass Spectrometry ◽  
Gas Phase Chemistry ◽  
Temperature Rate ◽  
Phase Chemistry

AbstractTetrakis(dimethylamino)titanium (TDMAT) is an important precursor for TiN, TiCN, and TiSiN thin films in chemical vapor deposition. In order to better understand how the gas phase chemistry influences the formation of these films, the decomposition of TDMAT has been studied in a high-temperature flow reactor (HTFR) by molecular beam mass spectrometry (MBMS). Two kinetic regimes have been observed as a function of temperature. Rate expressions and mechanistic implications will be presented. Further studies are in progress to identify the gas phase species relevant to the decomposition mechanism of TDMAT.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

scholarly journals Molecular Beam Sampling to Analyze the Reaction Mechanism of Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (4) ◽  
pp. 353-359
Author(s):  
Yoshitsugu TSUTSUMI ◽  
Masato IKEGAWA ◽  
Tatehiko USUI ◽  
Yoko ICHIKAWA ◽  
Kazunori WATANABE ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Mechanism ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor

Te Induced AlAs/GaAs Superlattice Mixing

1988 ◽  
Vol 126 ◽  
Author(s):  
P. Mel ◽  
S. A. Schwarz ◽  
T. Venkatesan ◽  
C. L. Schwartz ◽  
E. Colas
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Temperature Range ◽  
The Relationship ◽  
Secondary Ion

ABSTRACTTe enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations of 2×1017 to 5×1018 cm−.3 In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.

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