Effects of Reactive Ion Etching on Phonon-Electron Interactions in Inalas-Ingaas Modulation-Doped Field-Effect Transistor Structures Studied by Raman Scattering

MRS Proceedings ◽

10.1557/proc-326-377 ◽

1993 ◽

Vol 326 ◽

Cited By ~ 1

Author(s):

J.E. Maslar ◽

J.F. Dorsten ◽

P.W. Bohn ◽

S. Agarwala ◽

I. Adesidat ◽

...

Keyword(s):

Raman Scattering ◽

Field Effect ◽

Field Effect Transistor ◽

Reactive Ion Etching ◽

Ion Etching ◽

Effect Transistor ◽

Electron Interactions

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An organic poly(3,4-ethylenedioxythiophene) field-effect transistor fabricated by spin coating and reactive ion etching

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.813468 ◽

2003 ◽

Vol 50 (5) ◽

pp. 1419-1422 ◽

Cited By ~ 8

Author(s):

Tianhong Cui ◽

Guirong Liang ◽

K. Varahramyan

Keyword(s):

Spin Coating ◽

Field Effect ◽

Field Effect Transistor ◽

Reactive Ion Etching ◽

Ion Etching ◽

Effect Transistor

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Phonon‐electron interactions in the two‐dimensional electron gas in InGaAs‐InAlAs modulation‐doped field‐effect transistor structures studied by Raman scattering

Applied Physics Letters ◽

10.1063/1.110645 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1909-1911 ◽

Cited By ~ 10

Author(s):

J. E. Maslar ◽

J. F. Dorsten ◽

P. W. Bohn ◽

S. Agarwala ◽

I. Adesida ◽

...

Keyword(s):

Raman Scattering ◽

Field Effect ◽

Field Effect Transistor ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Effect Transistor ◽

Dimensional Electron Gas ◽

Electron Interactions

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Inductively Coupled Plasma Reactive Ion Etching with SiCl4Gas for Recessed Gate AlGaN/GaN Heterostructure Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2320 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2320-2324 ◽

Cited By ~ 6

Author(s):

Kazuaki Matsuura ◽

Daigo Kikuta ◽

Jin-Ping Ao ◽

Hiromichi Ogiya ◽

Michihiro Hiramoto ◽

...

Keyword(s):

Inductively Coupled Plasma ◽

Field Effect ◽

Field Effect Transistor ◽

Reactive Ion Etching ◽

Ion Etching ◽

Inductively Coupled ◽

Effect Transistor ◽

Gan Heterostructure ◽

Recessed Gate

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An investigation of CH4/H2 reactive ion etching damage to thin heavily doped GaAs metal–semiconductor field effect transistor layers during gate recessing

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584884 ◽

1990 ◽

Vol 8 (6) ◽

pp. 1966 ◽

Cited By ~ 11

Author(s):

N. I. Cameron

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Reactive Ion Etching ◽

Ion Etching ◽

Heavily Doped ◽

Effect Transistor

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Raman scattering study of low dose Si±‐implanted GaAs used for metal‐semiconductor field‐effect transistor fabrication

Applied Physics Letters ◽

10.1063/1.98506 ◽

1987 ◽

Vol 51 (23) ◽

pp. 1904-1906 ◽

Cited By ~ 1

Author(s):

J. Wagner ◽

Th. Frey ◽

W. Jantz

Keyword(s):

Raman Scattering ◽

Field Effect ◽

Field Effect Transistor ◽

Low Dose ◽

Scattering Study ◽

Effect Transistor ◽

Transistor Fabrication

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Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

Applied Physics Letters ◽

10.1063/1.1906305 ◽

2005 ◽

Vol 86 (17) ◽

pp. 173503 ◽

Cited By ~ 55

Author(s):

I. Ahmad ◽

V. Kasisomayajula ◽

M. Holtz ◽

J. M. Berg ◽

S. R. Kurtz ◽

...

Keyword(s):

Raman Scattering ◽

Field Effect ◽

Field Effect Transistor ◽

Self Heating ◽

Effect Transistor

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Direct bandgap opening in sodium-doped antimonene quantum dots: an emerging 2D semiconductor

Materials Horizons ◽

10.1039/d0mh00440e ◽

2020 ◽

Vol 7 (6) ◽

pp. 1588-1596 ◽

Cited By ~ 4

Author(s):

Liang Hu ◽

Zhenyu Xu ◽

Fangchao Long ◽

Jun Yuan ◽

Hui Li ◽

...

Keyword(s):

Quantum Dots ◽

Electric Field ◽

Raman Scattering ◽

Small Molecules ◽

Field Effect ◽

Field Effect Transistor ◽

Direct Bandgap ◽

Field Control ◽

Effect Transistor

The electric field control of Raman scattering for small molecules can be realized in direct semiconducting antimonene-based field effect transistor.

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Edge-enhanced Raman scattering in narrow sGe fin field-effect transistor channels

Applied Physics Letters ◽

10.1063/1.4906537 ◽

2015 ◽

Vol 106 (3) ◽

pp. 033107 ◽

Cited By ~ 9

Author(s):

T. Nuytten ◽

T. Hantschel ◽

D. Kosemura ◽

A. Schulze ◽

I. De Wolf ◽

...

Keyword(s):

Raman Scattering ◽

Field Effect ◽

Field Effect Transistor ◽

Enhanced Raman Scattering ◽

Effect Transistor

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Oxide Field-Effect Transistor with Polymer-Based Gate Insulator

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.139.207 ◽

2019 ◽

Vol 139 (3) ◽

pp. 207-210

Author(s):

Kohei Fujiwara

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Insulator ◽

Effect Transistor

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Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

IEICE Transactions on Electronics ◽

10.1587/transele.e93.c.540 ◽

2010 ◽

Vol E93-C (5) ◽

pp. 540-545 ◽

Cited By ~ 10

Author(s):

Dong Seup LEE ◽

Hong-Seon YANG ◽

Kwon-Chil KANG ◽

Joung-Eob LEE ◽

Jung Han LEE ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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