Direct bandgap opening in sodium-doped antimonene quantum dots: an emerging 2D semiconductor

2020 ◽  
Vol 7 (6) ◽  
pp. 1588-1596 ◽  
Author(s):  
Liang Hu ◽  
Zhenyu Xu ◽  
Fangchao Long ◽  
Jun Yuan ◽  
Hui Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Raman Scattering ◽  
Small Molecules ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Direct Bandgap ◽  
Field Control ◽  
Effect Transistor

The electric field control of Raman scattering for small molecules can be realized in direct semiconducting antimonene-based field effect transistor.

scholarly journals Electric-field control of single-molecule tautomerization

2020 ◽  
Vol 22 (11) ◽  
pp. 6370-6375 ◽  
Author(s):  
Shai Mangel ◽  
Maxim Skripnik ◽  
Katharina Polyudov ◽  
Christian Dette ◽  
Tobias Wollandt ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Molecule ◽  
Scanning Tunneling Microscope ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Scanning Tunneling ◽  
Electric Field Effect ◽  
Graphene Field Effect Transistor ◽  
Field Control ◽  
Effect Transistor

The combination of a graphene field-effect transistor and a gate-tunable scanning tunneling microscope enables independent control over the electric field. Using this method, we studied the electric field effect on the tautomerization reaction.

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

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