Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

2005 ◽  
Vol 86 (17) ◽  
pp. 173503 ◽  
Author(s):  
I. Ahmad ◽  
V. Kasisomayajula ◽  
M. Holtz ◽  
J. M. Berg ◽  
S. R. Kurtz ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Self Heating ◽  
Effect Transistor

Improvement in Self-Heating Characteristic by Utilizing Sapphire Substrate in Omega-Gate-Shaped Nanowire Field Effect Transistor for Wearable, Military, and Aerospace Application

2021 ◽  
Vol 21 (5) ◽  
pp. 3092-3098
Author(s):  
Young Suh Song ◽  
Hyunwoo Kim ◽  
Junsu Yu ◽  
Jongho Lee
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Heat Dissipation ◽  
Silicon On Insulator ◽  
The Self ◽  
Self Heating ◽  
Aerospace Applications ◽  
Radiation Resistant ◽  
Effect Transistor

In this study, we propose an omega-shaped-gate nanowire field effect transistor (ONWFET) with a silicon-on-sapphire (SOS) substrate. In order to investigate improvements in the self-heating characteristic with the use of a SOS substrate, the lattice temperature is examined using a Synopsys Sentaurus 3D Technology computer-aided design (TCAD) simulator with the results compared to those with a silicon-on-insulator (SOI) substrate. To validate the proposed structure with the SOS substrate, the locations of hot spots and heat dissipation paths (heat sinks) depending on the substrate materials are also analyzed. The electrical characteristics, specifically the on-current (Ion), off-current (Ioff), and subthreshold swing (SS), were investigated as well. Hence, it is demonstrated here that incorporating a SOS substrate can improve both the self-heating characteristic and the SS at the same time. Therefore, enhanced logic devices are feasible if using an ONWFET with a SOS substrate. Examples include wearable devices and military and future aerospace applications achieved by the radiation-resistant material Al2O3 that has high thermal conductivity.

Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations

2006 ◽  
Vol 100 (11) ◽  
pp. 113718 ◽  
Author(s):  
I. Ahmad ◽  
V. Kasisomayajula ◽  
D. Y. Song ◽  
L. Tian ◽  
J. M. Berg ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Self Heating ◽  
Effect Transistor

Direct bandgap opening in sodium-doped antimonene quantum dots: an emerging 2D semiconductor

2020 ◽  
Vol 7 (6) ◽  
pp. 1588-1596 ◽  
Author(s):  
Liang Hu ◽  
Zhenyu Xu ◽  
Fangchao Long ◽  
Jun Yuan ◽  
Hui Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Raman Scattering ◽  
Small Molecules ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Direct Bandgap ◽  
Field Control ◽  
Effect Transistor

The electric field control of Raman scattering for small molecules can be realized in direct semiconducting antimonene-based field effect transistor.

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