Edge-enhanced Raman scattering in narrow sGe fin field-effect transistor channels

2015 ◽  
Vol 106 (3) ◽  
pp. 033107 ◽  
Author(s):  
T. Nuytten ◽  
T. Hantschel ◽  
D. Kosemura ◽  
A. Schulze ◽  
I. De Wolf ◽  
...  
2005 ◽  
Vol 86 (17) ◽  
pp. 173503 ◽  
Author(s):  
I. Ahmad ◽  
V. Kasisomayajula ◽  
M. Holtz ◽  
J. M. Berg ◽  
S. R. Kurtz ◽  
...  

2020 ◽  
Vol 7 (6) ◽  
pp. 1588-1596 ◽  
Author(s):  
Liang Hu ◽  
Zhenyu Xu ◽  
Fangchao Long ◽  
Jun Yuan ◽  
Hui Li ◽  
...  

The electric field control of Raman scattering for small molecules can be realized in direct semiconducting antimonene-based field effect transistor.


2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document