scholarly journals Effect of Pressure on Arsenic Diffusion in Germanium

1993 ◽  
Vol 325 ◽  
Author(s):  
S. Mitha ◽  
S. D. Theiss ◽  
M. J. Aziz ◽  
D. Schiferl ◽  
D. B. Poker
Keyword(s):  
Diamond Anvil Cell ◽  
Activation Volume ◽  
Secondary Ion Mass Spectrometry ◽  
Liquid Argon ◽  
Temperature Profiles ◽  
Pressure Medium ◽  
Diamond Anvil ◽  
Diffusion Mechanisms ◽  
Secondary Ion ◽  
High Temperature High Pressure

AbstractWe report preliminary results of a study of the activation volume for diffusion of arsenic in germanium. High-temperature high-pressure anneals were performed in a liquid argon pressure medium in a diamond anvil cell capable of reaching 5 GPa and 7500 C, which is externally heated for uniform and repeatable temperature profiles. The broadening of an ion-implanted arsenic profile was measured by Secondary Ion Mass Spectrometry. Hydrostatic pressure retards the diffusivity at 575°C, characterized by an activation volume that is +15% of the atomic volume of Ge. Implications for diffusion mechanisms are discussed.

Pressure-Enhanced Interdiffusion in Amorphous Si/Ge Multilayers: Implications for Defect-Mediated Diffusion

1994 ◽  
Vol 356 ◽  
Author(s):  
Steven D. Theiss ◽  
F. Spaepen ◽  
M. J. Aziz
Keyword(s):  
Diamond Anvil Cell ◽  
Activation Volume ◽  
Applied Pressure ◽  
Ex Situ ◽  
Dangling Bond ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diamond Anvil ◽  
Consistent Increase ◽  
Amorphous Si

AbstractWe have studied the pressure-dependence of the interdiffusion rate in amorphous Si/Ge multilayers. Samples were annealed in an externally-heated diamond anvil cell at 693 K at pressures ranging from 0 to 3.1 GPa. Interdiffusion rates were determined by ex situ x-ray diffraction measurements of the decay of the artificial Bragg peaks associated with the multilayer periodicity. Scaling experiments were performed to factor out the effects of concentration and time dependence in the diffusivity. All samples showed a consistent increase in diffusivity with applied pressure, characterized by a negative activation volume ranging from −44±3 to −37±2 percent of the atomic volume of Si for films ranging in average Si composition from 25 to 71 percent, respectively. These results are consistent with a model for diffusion in amorphous Si and Ge based on dangling bond migration.

Interdiffusion of Amorphous Si/Ge Multilayers Under Hydrostatic Pressure

1993 ◽  
Vol 321 ◽  
Author(s):  
Steven D. Theiss ◽  
S. Mitha ◽  
F. Spaepen ◽  
M. J. Aziz
Keyword(s):  
Hydrostatic Pressure ◽  
Diamond Anvil Cell ◽  
Activation Volume ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rate Of Decay ◽  
Diamond Anvil ◽  
Consistent Increase ◽  
Amorphous Si ◽  
Initial Results

ABSTRACTWe report initial results of an x-ray diffraction study of the pressure-dependence of the interdiffusion rate in amorphous Si/Ge Multilayers. Anneals were performed in a diamond anvil cell at 700 K for various pressures and durations. Interdiffusion was measured by Monitoring the rate of decay of the artificial Bragg peaks associated with the multilayer periodicity. A consistent increase in diffusivity was seen with pressure, characterized by an activation volume of -25±11 percent of the atomic volume of Si. An atomistic mechanism that Might account for such behavior is discussed.

scholarly journals Laser ultrasonic measurements in a diamond anvil cell on Fe and the KBr pressure medium

2011 ◽  
Vol 278 ◽  
pp. 012017 ◽  
Author(s):  
N Chigarev ◽  
P Zinin ◽  
D Mounier ◽  
A Bulou ◽  
A Zerr ◽  
...  
Keyword(s):  
Diamond Anvil Cell ◽  
Laser Ultrasonic ◽  
Ultrasonic Measurements ◽  
Pressure Medium ◽  
Diamond Anvil

Transport measurements at low temperatures in a diamond anvil cell with helium as pressure medium

1997 ◽  
Vol 68 (3) ◽  
pp. 1514-1517 ◽  
Author(s):  
J. Thomasson ◽  
Y. Dumont ◽  
J.-C. Griveau ◽  
C. Ayache
Keyword(s):  
Low Temperatures ◽  
Diamond Anvil Cell ◽  
Transport Measurements ◽  
Pressure Medium ◽  
Diamond Anvil

scholarly journals Redistribution of Metallic Impurities in Si during Annealing and Oxidation: W and Fe

2018 ◽  
Vol 383 ◽  
pp. 17-22
Author(s):  
Alain Portavoce ◽  
Anthony De Luca ◽  
Nelly Burle ◽  
Michaël Texier
Keyword(s):  
Isothermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Dissolution Mechanism ◽  
Transmission Electron ◽  
Diffusion Mechanisms ◽  
Core Shell Structure ◽  
Secondary Ion ◽  
Metallic Impurities ◽  
Diffusion Profiles ◽  
Si Wafer

Atomic redistribution of W and Fe in Si were studied using secondary ion mass spectrometry and transmission electron microscopy. W diffusion experiments performed during isothermal annealing and during Si oxidation show that W atoms should use at least two different diffusion mechanisms. Experimental diffusion profiles can be well simulated by considering the simultaneous use of three different W diffusion mechanisms: the dissociative and the kick-out mechanisms, as well as an original mechanism based on the formation of a W-Si self-interstitial pair located on the interstitial Si sub-lattice. Fe redistribution was studied during the oxidation of a Fe-contaminated Si wafer. Fe is shown to be first pushed-out in Si by the mobile SiO2/Si interface, and thus to form Fe silicides precipitates at this interface. The silicide precipitates, which can exhibit a core-shell structure, appear to move with the SiO2/Si interface thanks to an oxidation/dissolution mechanism in the SiO2 and a nucleation/growth mechanism in the Si matrix. Furthermore, the rate difference between Si and Fe silicide precipitate oxidation leads to the formation of Si pyramidal defects at the SiO2/Si interface.

scholarly journals Time-Resolved Reflectivity Measurement of the Pressure-Enhanced Crystallization Rate of Amorphous Si in a Diamond Anvil Cell

1988 ◽  
Vol 100 ◽  
Author(s):  
G. Q. Lu ◽  
E. Nygren ◽  
M. J. Aziz ◽  
D. Turnbull ◽  
C. W. White
Keyword(s):  
Pressure Dependence ◽  
Diamond Anvil Cell ◽  
Activation Volume ◽  
Solid Phase ◽  
Crystallization Rate ◽  
Time Resolved ◽  
Reflectivity Measurement ◽  
Diamond Anvil ◽  
Fluid Argon

ABSTRACTWe have measured the pressure dependence of the solid phase epitaxial growth (SPEG) rate of self-implanted Si (100) by using the in-situ time-resolved reflectivity technique [1] in a hightemperature and high-pressure diamond anvil cell (DAC). With fluid argon as the pressure transmission medium, a clean and perfectly hydrostatic pressure environment is achieved around the sample. The external heating geometry employed in the DAC provides a uniform temperature across the sample. At temperatures in the range of 530 – 550 °C and pressure up to 50 kbars (5 GPa), the growth rate is enhanced by up to a factor of ten over that at 1 atmosphere pressure. The results are characterized by a negative activation volume of approximately −3.0 cm3/mole (−27% of the atomic volume). These preliminary results show a significantly weaker pressure dependence than does the previous work of Nygren et al. [2], who found an activation volume of −8.7 cm3/mole. The implications of these results for the nature of the defect responsible for thermal SPEG and irradiation enhanced SPEG is discussed.

Sign in / Sign up

Export Citation Format

Share Document