Electronic Characterization of Dislocations in Rtcvd Germanium-Silicon/Silicon Grown by Graded Layer Epitaxy

1993 ◽  
Vol 325 ◽  
Author(s):  
P.N. Grillot ◽  
S.A. Ringel ◽  
G.P. Watsona ◽  
E.A. Fitzgerald ◽  
Y.H. Xie
Keyword(s):  
Peak Height ◽  
Trapping Center ◽  
Applied Bias ◽  
Recombination Activity ◽  
Hole Trapping ◽  
Trapping Centers ◽  
Germanium Silicon ◽  
Silicon Silicon ◽  
Electron Trapping Center

AbstractCarrier trapping and recombination activity have been studied with DLTS and EBIC in RTCVD grown compositionally graded Ge0.3Si0.7/Si heterostructures. DLTS peak height is found to vary with applied bias, and the bias conditions used indicate that at least one peak is present in the homoepitaxial Si buffer layer and perhaps the substrate as well. Variations in EBIC contrast as a function of reverse bias, and DLTS fill pulse experiments both indicate that the DLTS peaks observed are dislocation related. Moreover, the bias dependent decrease in DLTS peak height is observed to occur at different rates for different peaks, indicating a possible connection between certain DLTS peaks and dislocation orientation or type. Activation energies of one electron trapping center and one hole trapping center add up to roughly the expected bandgap in a relaxed GexSi1−x, alloy with x ≦ 0.3, indicating that the electron and hole trapping centers observed with DLTS may, in fact, be associated with the R-G center observed by EBIC.

FABRICATION AND CHARACTERIZATION OF La2-xSrxCuO4/Nb-SrTiO3 HETEROJUNCTIONS IN DIFFERENT DOPED REGIMES

2012 ◽  
Vol 27 (01) ◽  
pp. 1350005 ◽  
Author(s):  
Y. ZHANG ◽  
G. F. WANG ◽  
W. L. LI ◽  
J. Q. SHEN ◽  
P. G. LI ◽  
...  
Keyword(s):  
Carrier Density ◽  
Pulsed Laser ◽  
Depletion Layer ◽  
Laser Deposition ◽  
Superconducting Gap ◽  
Applied Bias ◽  
Current Voltage ◽  
Fabrication And Characterization ◽  
The Difference

Two types of p–n junction were fabricated by depositing underdoped La 1.9 Sr 0.1 CuO 4 film and overdoped La 1.8 Sr 0.2 CuO 4 film on n -type 0.5 wt.% Nb -doped SrTiO 3 (NSTO) substrates using pulsed laser deposition technique (PLD), respectively. Current–voltage (I–V) characteristics of the La 2-x Sr x CuO 4/NSTO heterojunction were measured in the temperature range from 5 K to 300 K. All I–V curves show a fine rectifying property and a visible reduction of the diffusion potential (Vd) is observed, but the behaviors of Vd are vastly different for the underdoped and overdoped regimes at temperatures below Tc. Analysis results show that the characteristics of the heterojunction are possibly affected not only by the superconducting gap of LSCO at Tc, but also by the depletion layer in the interface of LSCO/NSTO junction. The variation of the depletion layer is possibly different under the same applied bias voltages for the underdoped La 1.9 Sr 0.1 CuO 4/NSTO junction and overdoped La 1.8 Sr 0.2 CuO 4/NSTO junction due to the difference of carrier density at La 1.9 Sr 0.1 CuO 4 and La 1.8 Sr 0.2 CuO 4.

scholarly journals Copper-nanoparticle-dispersed amorphous BaTiO3 thin films as hole-trapping centers: enhanced photocatalytic activity and stability

RSC Advances ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 5045-5052 ◽  
Author(s):  
Su-Wei Zhang ◽  
Shun Li ◽  
Bo-Ping Zhang ◽  
Dongfang Yu ◽  
Zuotai Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Photocatalytic Degradation ◽  
Copper Nanoparticle ◽  
Photoelectrochemical Performance ◽  
Hole Trapping ◽  
Degradation Activity ◽  
Trapping Centers

The photocatalytic degradation activity and photoelectrochemical performance of amorphous BaTiO3 films can be improved after introducing Cu NPs, and the oxidation of Cu is strongly hindered when dispersing in the amorphous BaTiO3 films that serve as h+-trapping centers.

Characterization of silicon-silicon bonds on the Si(100) surfaces

1999 ◽  
Vol 75 (16) ◽  
pp. 2404-2406 ◽  
Author(s):  
Dominic R. Alfonso
Keyword(s):  
Silicon Silicon

scholarly journals A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

2005 ◽  
Vol 483-485 ◽  
pp. 1005-1008
Author(s):  
Pierre Brosselard ◽  
Thierry Bouchet ◽  
Dominique Planson ◽  
Sigo Scharnholz ◽  
Gontran Pâques ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Electrical Characterization ◽  
Electrical Strength ◽  
Oxide Charge ◽  
Blocking Voltage ◽  
Simulation Based ◽  
Device Structures ◽  
Silicon Silicon

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

scholarly journals Intrinsic emission and electron-hole trapping centers in crystals Li2SO4-Cu

2021 ◽  
Vol 5 (2) ◽  
pp. 140-147
Author(s):  
T.N. Nurakhmetov ◽  
Zh.M. Salikhodzha ◽  
M.Y. Dolomatov ◽  
B.N. Yussupbekova ◽  
A.M. Zhunusbekov ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Vacuum Ultraviolet ◽  
Annealed Sample ◽  
Excitation Spectra ◽  
Electron Hole ◽  
Hole Trapping ◽  
Trapping Centers ◽  
Hole Centers ◽  
Intrinsic Emission

In the present work, the emission and excitation spectra in Li2SO4-Cu crystals have been obtained by the methods of vacuum-ultraviolet and thermoactivation spectroscopy. We have studied the nature of emission from a pressed and annealed sample of Li2SO4-Cu powders. It has been revealed that at low temperatures Cu0-SO4--centers are formed during the trap of electrons by Cu+-centers and during localization of SO4--radicals in the form of localized hole centers.

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