Deep electron trapping center in Si‐doped InGaAlP grown by molecular‐beam epitaxy

1986 ◽  
Vol 59 (10) ◽  
pp. 3489-3494 ◽  
Author(s):  
S. Nojima ◽  
H. Tanaka ◽  
H. Asahi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Trapping ◽  
Trapping Center ◽  
Si Doped ◽  
Electron Trapping Center

Deep Electron Trapping Centers in Si-Doped InAlAs Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 103 (2) ◽  
pp. 511-516 ◽  
Author(s):  
K. Nakashima ◽  
S. Nojima ◽  
Y. Kawamura ◽  
H. Asahi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Trapping ◽  
Si Doped ◽  
Trapping Centers

Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

2006 ◽  
Vol 955 ◽  
Author(s):  
Mo Ahoujja ◽  
S Elhamri ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Unknown Origin ◽  
Shallow Donor ◽  
Related Point ◽  
Line Defects ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTDeep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth

1989 ◽  
Vol 28 (Part 2, No. 2) ◽  
pp. L151-L154 ◽  
Author(s):  
Yoshimichi Okano ◽  
Hiroyuki Seto ◽  
Hisashi Katahama ◽  
Shiro Nishine ◽  
Isao Fujimoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doped

scholarly journals Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

2013 ◽  
Vol 46 (4) ◽  
pp. 893-897 ◽  
Author(s):  
Anton Davydok ◽  
Torsten Rieger ◽  
Andreas Biermanns ◽  
Muhammad Saqib ◽  
Thomas Grap ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Molecular Beam Epitaxy Growth ◽  
Alloy Formation ◽  
X Ray Diffraction ◽  
Out Of Plane ◽  
Inas Nanowires ◽  
Vertically Aligned ◽  
Si Doped

Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, the formation of a Ga0.2In0.8As alloy was observed if the growth was performed on samples covered by a defective oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Ga concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

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