Pressure Study of Photoconductivity in Indium Antimonide I. Low-Concentration n-Type at 77 K. Pressure-Dependent Capture Coefficient of a Hole-Trapping Center

1984 ◽  
Vol 124 (1) ◽  
pp. 411-421 ◽  
Author(s):  
R. Piotrzkowski
Keyword(s):  
Indium Antimonide ◽  
Trapping Center ◽  
Low Concentration ◽  
Capture Coefficient ◽  
Hole Trapping

Donor Deionization and Impurity Conduction in Low Concentration n-Type Indium Antimonide

1972 ◽  
Vol 33 (5) ◽  
pp. 1491-1491 ◽  
Author(s):  
Shuichi Ishida ◽  
Keisuke L. I. Kobayashi ◽  
Eizo Otsuka
Keyword(s):  
Indium Antimonide ◽  
Low Concentration ◽  
Impurity Conduction

Electronic Characterization of Dislocations in Rtcvd Germanium-Silicon/Silicon Grown by Graded Layer Epitaxy

1993 ◽  
Vol 325 ◽  
Author(s):  
P.N. Grillot ◽  
S.A. Ringel ◽  
G.P. Watsona ◽  
E.A. Fitzgerald ◽  
Y.H. Xie
Keyword(s):  
Peak Height ◽  
Trapping Center ◽  
Applied Bias ◽  
Recombination Activity ◽  
Hole Trapping ◽  
Trapping Centers ◽  
Germanium Silicon ◽  
Silicon Silicon ◽  
Electron Trapping Center

AbstractCarrier trapping and recombination activity have been studied with DLTS and EBIC in RTCVD grown compositionally graded Ge0.3Si0.7/Si heterostructures. DLTS peak height is found to vary with applied bias, and the bias conditions used indicate that at least one peak is present in the homoepitaxial Si buffer layer and perhaps the substrate as well. Variations in EBIC contrast as a function of reverse bias, and DLTS fill pulse experiments both indicate that the DLTS peaks observed are dislocation related. Moreover, the bias dependent decrease in DLTS peak height is observed to occur at different rates for different peaks, indicating a possible connection between certain DLTS peaks and dislocation orientation or type. Activation energies of one electron trapping center and one hole trapping center add up to roughly the expected bandgap in a relaxed GexSi1−x, alloy with x ≦ 0.3, indicating that the electron and hole trapping centers observed with DLTS may, in fact, be associated with the R-G center observed by EBIC.

161. Methodological Issues in Ultra-Low Concentration Aerosol Sampling

2003 ◽  
Author(s):  
H. McCutcheon ◽  
D. Johnson ◽  
N. Esmen ◽  
R. Clinkenbeard
Keyword(s):  
Aerosol Sampling ◽  
Methodological Issues ◽  
Low Concentration
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