Characterization of silicon-silicon bonds on the Si(100) surfaces

1999 ◽  
Vol 75 (16) ◽  
pp. 2404-2406 ◽  
Author(s):  
Dominic R. Alfonso
Keyword(s):  
Silicon Silicon

scholarly journals A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

2005 ◽  
Vol 483-485 ◽  
pp. 1005-1008
Author(s):  
Pierre Brosselard ◽  
Thierry Bouchet ◽  
Dominique Planson ◽  
Sigo Scharnholz ◽  
Gontran Pâques ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Electrical Characterization ◽  
Electrical Strength ◽  
Oxide Charge ◽  
Blocking Voltage ◽  
Simulation Based ◽  
Device Structures ◽  
Silicon Silicon

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

scholarly journals Disilyne with a silicon-silicon triple bond: A new entry to multiple bond chemistry

2008 ◽  
Vol 80 (3) ◽  
pp. 447-457 ◽  
Author(s):  
Akira Sekiguchi
Keyword(s):  
Crystal Structure ◽  
Triple Bond ◽  
Alkali Metals ◽  
Theoretical Calculations ◽  
Multiple Bond ◽  
Silicon Silicon ◽  
New Entry

The synthesis, crystal structure, and characterization of a silicon-silicon triply bonded species, disilyne with two bis[bis(trimethylsilyl)methyl]isopropylsilyl substituents, are described. The nature of the sp-hybridized silicon atoms is discussed from the viewpoint of spectroscopic results and theoretical calculations. The reactivity of the disilyne with alkali metals, tBuLi, and π-bonded compounds such as cis- and trans-2-butenes and phenylacetylene is also described.

The optoelectronic characterization of the silicon/silicon nitride interface

2002 ◽  
Vol 91-92 ◽  
pp. 229-233 ◽  
Author(s):  
G. Citarella ◽  
O. Abdallah ◽  
M. Kunst
Keyword(s):  
Silicon Nitride ◽  
Silicon Silicon

Characterization of Nickel Induced Crystallized Silicon by Spectroscopic Ellipsometry

2006 ◽  
Vol 910 ◽  
Author(s):  
Luis Pereira ◽  
Hugo Aguas ◽  
Manfred Beckers ◽  
Rui M. S. Martins ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicon Film ◽  
Silicon Films ◽  
New Approach ◽  
Metal Induced Crystallization ◽  
Annealing Conditions ◽  
Metal Thickness ◽  
Metal Layers ◽  
Silicon Silicon

AbstractIn this work Spectroscopic Ellipsometry (SE) was used to study metal induced crystallization (MIC) on amorphous silicon films in order to analyze the influence of different annealing conditions on their structural properties. The variation of the metal thickness has shown to be determinant on the time needed to full crystallize silicon films. Films of 100 nm thickness crystallize after 2h at 500°C using 1 nm of Ni deposited on it. When reducing the average metal thickness down to 0.05 nm the same silicon film will need almost 10 hours to be totally crystallized. Using a new approach on the modelling procedure of the SE data we show to be possible to determine the Ni remaining inside the crystallized films. The method consists in using Ni as reference on the Bruggeman Effective Medium Approximation (BEMA) layer that will simulated the optical response of the crystallized silicon. Silicon samples and metal layers with different thicknesses were analyzed and this new method has shown to be sensible to changes on the initial metal/silicon ratio. The nickel distribution inside the silicon layers was independently measured by Rutherford Backscattering Spectroscopy (RBS) to check the data obtained from the proposed approach.

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