Use of Synchrotron White Beam X-Ray Topography to Characterize IR Detector Manufacturing Processes

1993 ◽  
Vol 324 ◽  
Author(s):  
M. Dudley ◽  
Jun Wu ◽  
D. J. Larson ◽  
D. Dimarzio
Keyword(s):  
Focal Plane ◽  
Depth Profiling ◽  
Focal Plane Arrays ◽  
Ir Detector ◽  
X Ray ◽  
Ir Microscopy ◽  
White Beam ◽  
Processing Step ◽  
Yield Quality ◽  
Detector Materials

AbstractIt has been have demonstrated that synchrotron white beam x-ray topography can be used to characterize IR detector materials at nearly every stage in the manufacturing cycle, including: as-grown CdZnTe single crystal boules; substrate wafers cut from different positions in the boules; thin films grown on characterized wafers; and HgCdTe focal plane arraystructures. Special diffraction geometries have been developed, taking advantage of the broad wavelength spectrum, large beam size, and high intensity of the synchrotron radiation source, to enable rapid and non-destructive assessment of defect densities and strain distributions after each processing step. This diagnostic method has important implications for increasing the producibility of focal plane arrays. Boule characterization can reveal defects, grain orientation, interfaces and strains, and provides guidance for optimal slicing. Wafer characterization produces multiple topographic images, providing both defect mapping and depth profiling in a single exposure. Finally, x-ray topography of HgCdTe focal plane array test articles reveals subsurface damage not observable by optical or IR microscopy. The applicability of this technique to evaluate yield, quality, and reproducibility will be discussed.

Further Developments in Improved Sensitivity, Low-cost Uncooled IR Detector Focal Plane Arrays

2010 ◽  
Author(s):  
Wendy L. Sarney ◽  
John W. Little ◽  
Kimberley A. Olver ◽  
Frank E. Livingston ◽  
Krisztian Niesz ◽  
...  
Keyword(s):  
Focal Plane ◽  
Low Cost ◽  
Focal Plane Arrays ◽  
Ir Detector

InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al203 Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
E. Michel ◽  
H. Mohseni ◽  
J. Wojkowski ◽  
J. Sandven ◽  
J. Xu ◽  
...  
Keyword(s):  
Thermal Imaging ◽  
Focal Plane ◽  
Growth Conditions ◽  
Substrate Material ◽  
Focal Plane Arrays ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Si Substrates ◽  
Sapphire Substrates ◽  
Gaas Substrates

ABSTRACTIn this paper, we report on the growth and fabrication of InSb detectors and Focal Plane Arrays (FPA's) on (100) Si, Al203, and (100) and (111) GaAs substrates for infrared (IR) imaging. Several advantages result from using GaAs, Si, or Al203. First, InSb FPA's on these materials do not require thinning as with detectors fabricated from bulk InSb. In addition, these substrates are available in larger sizes, are semi-insulating (GaAs and sapphire), and are less expensive than InSb.Optimum growth conditions have been determined and discrete devices have been fabricated on each substrate material. The structural, electrical, and optical properties were verified using x-ray, Hall, photoresponse, and photoluminescence (PL) measurements. Measured x-ray Full Widths at Half Maximum (FWHM) were as low as 55 and 100 arcsec for InSb epilayers on GaAs and Si, respectively. Hall mobilities were as high as 128,000, 95,000 and 72,000 cm2/V-sec at 200 K, 77 K, and room temperature, respectively. In addition, 77 K PL linewidths were as low as 18, 20, and 30 meV on GaAs, Si, and sapphire substrates respectively, well below the 48 meV value previously reported in the literature.In collaboration with Lockheed Martin Fairchild Systems (LMFS), IR thermal imaging has been obtained from InSb FPA's on GaAs and Si substrates. This is the first successful IR thermal imaging from heteroepitaxially grown InSb. Because of the high quality substrates, larger areas, and higher yields, this technology is very promising for challenging traditional InSb FPA hybrid technology.

Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si Materials for Infrared Focal Plane Arrays

1990 ◽  
Vol 216 ◽  
Author(s):  
S.M. Johnson ◽  
J.B. James ◽  
W.L. Ahlgren ◽  
W.J. Hamilton ◽  
M. Ray ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
General Characteristic ◽  
Focal Plane Arrays ◽  
Misfit Dislocations ◽  
Cutoff Wavelength ◽  
X Ray Diffraction ◽  
Dislocation Interaction ◽  
X Ray ◽  
Si Substrates

ABSTRACTThe structural properties of LPE-grown HgCdTe on heteroepitaxial MOCVD-grown CdZnTe/GaAs/Si substrates were evaluated using high-resolution x-ray diffraction techniques and TEM. Large tilts {up to 4°} between CdZnTe layers and GaAs/Si substrates are a general characteristic of this heteroepitaxial system and are are attributed to the interaction of closely spaced misfit dislocations that arrange to form a tilt boundary. Either {112}CdTe or {552}CdTe can be grown on {112}GaAs/Si; the {552} was shown to result from a first-order twinning operation of {112}. Lamnella {111} microtwins in {111}CdZnTe/{100}GaAs/Si substrates, measured by x-ray techniques, are not readily propagated into the LPE-grown HgCdTe layer. The x-ray FWHM of the LPE HgCdTe is typically at least a factor of two lower than that of the Si-based substrate from annealing and due to the increased thickness of the layer; both mechanisms promote dislocation interaction and annihilation. High performance MWIR and LWIR HgCdTe 128×128 hybrid focal plane arrays were fabricated on these Si-based substrates. An array average of ROAj = 17.8 ohmcm2 for a cutoff wavelength of 10.8 μm at 78K was demonstrated.

Recent advances in heteroepitaxial Ge/Si(100) and Ge/Si(l 11)

1994 ◽  
Vol 52 ◽  
pp. 838-839
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Pickett ◽  
M. L. Timmons ◽  
T. P. Humphreys ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Mobility ◽  
Epitaxial Films ◽  
Focal Plane Arrays ◽  
Si Substrate ◽  
Large Area ◽  
Lattice Match ◽  
Temperature Growth ◽  
X Ray ◽  
Indium Bump

Heteroepitaxial Ge-on-Si could have many applications which include: high mobility p-channel fieldeffect transistors (FETs), large area Ge-based IR or X-ray detectors, or as a substrate for the growth of other epitaxial semiconductors. In particular, the close lattice match between Ge and GaAs and Ge and ZnSe offers a potential for Ge to be used as an interlayer for a GaAs/Si or ZnSe/Si technology.Additionally, with the Si substrate as the "foundation" for further epitaxial semiconductors, thereisa built-in thermal match for any device that must be intimately bonded to Si-based circuitry. Thisis particularly critical in the case of HgCdTe IR focal plane arrays that are indium bump-bonded to aSi multiplexer which will experience thermal cycling in use. This contribution briefly reviews some ofour recent results in the high temperature growth of Ge epitaxial films on Si(100) and Si(l 11) substrates which are being developed for use as a template for HgCdTe/CdZnTe growth.

FT-IR Spectroscopic Imaging in the Infrared “Fingerprint”Region Using an Mct Array Detector

1997 ◽  
Vol 3 (S2) ◽  
pp. 863-864
Author(s):  
R. A. Crocombe ◽  
N. Wright ◽  
D.L. Drapcho ◽  
W.J. McCarthy ◽  
P. Bhandare ◽  
...  
Keyword(s):  
Indium Antimonide ◽  
Focal Plane ◽  
Spectroscopic Imaging ◽  
Focal Plane Arrays ◽  
Array Detector ◽  
Ir Microscopy ◽  
Infrared Spectroscopic ◽  
Infrared Spectroscopic Imaging ◽  
Ft Ir ◽  
Ir Spectroscopic

A new infrared spectroscopic imaging technique has been described, combining step-scan Fourier transform (FT) Michelson interferometry with indium antimonide (InSb) focal-plane array (FPA) image detection [1-3], for use in the range 3950-1975 cm−1. The coupling of such detector to an interferometer provides an optimized method for infrared spectroscopic imaging by simultaneously realizing both a multiplex and multichannel advantage. Specifically, the multiple detector elements enable spectra at all pixels to be collected simultaneously, while the interferometer allows all the spectral frequencies to be measured concurrently. This technique can rapidly generate very high quality, chemically specific images from a wide variety of samples. Preliminary results from the use of a mid-infrared liquid-helium-cooled arsenic-doped-silicon array have also been reported recently [4]. Focal-plane arrays using mercury-cadmium-telluride (MCT) are now commercially available, giving access to the range 3950-800 cm−1, and greatly broadening the applicability of this technique [5].FT-IR microscopy does not require exotic sample preparation -- samples can be examined in transmission and reflectance, do not need to be stained or coated, and a vacuum is not required.

An abuttable CCD imager for visible and X-ray focal plane arrays

2003 ◽  
Author(s):  
B. Burke ◽  
R. Mountain ◽  
D. Harrison ◽  
J. Reinold ◽  
C. Doherty ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
X Ray

An abuttable CCD imager for visible and X-ray focal plane arrays

1991 ◽  
Vol 38 (5) ◽  
pp. 1069-1076 ◽  
Author(s):  
B.E. Burke ◽  
R.W. Mountain ◽  
D.C. Harrison ◽  
M.W. Bautz ◽  
J.P. Doty ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
X Ray

Rapid Structural Defect Mapping of Bulk II-VI Semiconductors Using White-Beam Synchrotron Topography and X-ray Rocking Curve Analysis

1992 ◽  
Vol 262 ◽  
Author(s):  
Don Di Marzio ◽  
Louis G. Casagrande ◽  
Myung B. Lee ◽  
Thomas Fanning ◽  
Michael Dudley
Keyword(s):  
Semiconductor Industry ◽  
Defect Analysis ◽  
Etch Pit Density ◽  
Ir Detector ◽  
Rocking Curve ◽  
X Ray ◽  
Etch Pit ◽  
White Beam ◽  
Device Structures ◽  
Nondestructive Characterization

ABSTRACTNondestructive characterization techniques for substrates, epilayers, and device structures are becoming increasingly important in the semiconductor industry. Synchrotron-based white-beam x-ray topography, x-ray rocking curve measurements, and etch pit density were used to map the defect structure in a variety of CdTe and CdZnTe single crystal substrates, which are important for IR detector applications involving HgCdTe. Defects such as low angle grain boundaries have been successfully correlated using topography, rocking curves, and etch pit density, and twins have been observed using topography and rocking curves. The effectiveness of white-beam synchrotron topography for rapid and nondestructive defect analysis and substrate screening is discussed.

Growth and Characterization of High Quality, Low Defect, Subgrain Free Cadmium Telluride by a Modified Horizontal Bridgman Technique

1986 ◽  
Vol 90 ◽  
Author(s):  
W. P. Allred ◽  
A. A. Khan ◽  
C. J. Johnson ◽  
N. C. Giles ◽  
J. F. Schetzina
Keyword(s):  
Large Area ◽  
Bridgman Technique ◽  
Ir Detector ◽  
Double Crystal ◽  
X Ray ◽  
Etch Pit ◽  
Donor And Acceptor ◽  
Vertical Bridgman ◽  
Detector Materials

ABSTRACTA low stress modified horizontal Bridgman technique has been developed and used to grow low defect, large area, subgrain free CdTe crystals for use as substrates in the epitaxial growth of HgCdTe and related IR detector materials. CdTe wafers cut from horizontal Bridgman grown boules exhibit, resistivities in the 107ohm-cm range. Etch pit counts are in the 104cm−2 range. Etch pit patterns as well as x-ray topographs indicate the absence of low-angle grain boundaries. Double crystal x-ray rocking curves are single peaked and very narrow with FWHM(333) as low as 9 arc-sec. Rocking curves of FWHM(333) = 9 to 15 arc-sec, measured at several different laboratories, have been obtained for CdTe wafers cut from several boules. This is in contrast to standard vertical Bridgman grown CdTe samples, which generally show broader x-ray rocking curves sometimes with multiple peaks as a result of subrgrain structure. Low temperature (1.6–4.5 K) photoluminescence (PL) measurements on these low defect samples reveal bright edge emission lines which are the main feature of the spectrum. Additional bound exciton lines and other sharp features associated with donor and acceptor impurities are also present. The very weak defect band luminescence (1.40–1.46 eV) provides additional evidence of sample quality.

Uncooled microbolometer detector: recent developments at ULIS

2006 ◽  
Vol 14 (1) ◽  
Author(s):  
J. Tissot ◽  
C. Trouilleau ◽  
B. Fieque ◽  
A. Crastes ◽  
O. Legras
Keyword(s):  
Process Control ◽  
Focal Plane ◽  
Infrared Detector ◽  
Wide Band ◽  
Industrial Applications ◽  
Focal Plane Arrays ◽  
Ir Detector ◽  
Infrared Focal Plane Arrays ◽  
Wide Range ◽  
Pixel Pitch

AbstractUncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. Fire-fighting, predictive maintenance, process control and thermography are a few of the industrial applications which could take benefit from uncooled infrared detector. Therefore, to answer these markets, a 35-μm pixel-pitch uncooled IR detector technology has been developed enabling high performance 160×120 and 384×288 arrays production. Besides a wide-band version from uncooled 320×240/45 μm array has been also developed in order to address process control and more precisely industrial furnaces control. The ULIS amorphous silicon technology is well adapted to manufacture low cost detector in mass production. After some brief microbolometer technological background, we present the characterization of 35 μm pixel-pitch detector as well as the wide-band 320×240 infrared focal plane arrays with a pixel pitch of 45 μm.

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