Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si Materials for Infrared Focal Plane Arrays

1990 ◽  
Vol 216 ◽  
Author(s):  
S.M. Johnson ◽  
J.B. James ◽  
W.L. Ahlgren ◽  
W.J. Hamilton ◽  
M. Ray ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
General Characteristic ◽  
Focal Plane Arrays ◽  
Misfit Dislocations ◽  
Cutoff Wavelength ◽  
X Ray Diffraction ◽  
Dislocation Interaction ◽  
X Ray ◽  
Si Substrates

ABSTRACTThe structural properties of LPE-grown HgCdTe on heteroepitaxial MOCVD-grown CdZnTe/GaAs/Si substrates were evaluated using high-resolution x-ray diffraction techniques and TEM. Large tilts {up to 4°} between CdZnTe layers and GaAs/Si substrates are a general characteristic of this heteroepitaxial system and are are attributed to the interaction of closely spaced misfit dislocations that arrange to form a tilt boundary. Either {112}CdTe or {552}CdTe can be grown on {112}GaAs/Si; the {552} was shown to result from a first-order twinning operation of {112}. Lamnella {111} microtwins in {111}CdZnTe/{100}GaAs/Si substrates, measured by x-ray techniques, are not readily propagated into the LPE-grown HgCdTe layer. The x-ray FWHM of the LPE HgCdTe is typically at least a factor of two lower than that of the Si-based substrate from annealing and due to the increased thickness of the layer; both mechanisms promote dislocation interaction and annihilation. High performance MWIR and LWIR HgCdTe 128×128 hybrid focal plane arrays were fabricated on these Si-based substrates. An array average of ROAj = 17.8 ohmcm2 for a cutoff wavelength of 10.8 μm at 78K was demonstrated.

InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al203 Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
E. Michel ◽  
H. Mohseni ◽  
J. Wojkowski ◽  
J. Sandven ◽  
J. Xu ◽  
...  
Keyword(s):  
Thermal Imaging ◽  
Focal Plane ◽  
Growth Conditions ◽  
Substrate Material ◽  
Focal Plane Arrays ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Si Substrates ◽  
Sapphire Substrates ◽  
Gaas Substrates

ABSTRACTIn this paper, we report on the growth and fabrication of InSb detectors and Focal Plane Arrays (FPA's) on (100) Si, Al203, and (100) and (111) GaAs substrates for infrared (IR) imaging. Several advantages result from using GaAs, Si, or Al203. First, InSb FPA's on these materials do not require thinning as with detectors fabricated from bulk InSb. In addition, these substrates are available in larger sizes, are semi-insulating (GaAs and sapphire), and are less expensive than InSb.Optimum growth conditions have been determined and discrete devices have been fabricated on each substrate material. The structural, electrical, and optical properties were verified using x-ray, Hall, photoresponse, and photoluminescence (PL) measurements. Measured x-ray Full Widths at Half Maximum (FWHM) were as low as 55 and 100 arcsec for InSb epilayers on GaAs and Si, respectively. Hall mobilities were as high as 128,000, 95,000 and 72,000 cm2/V-sec at 200 K, 77 K, and room temperature, respectively. In addition, 77 K PL linewidths were as low as 18, 20, and 30 meV on GaAs, Si, and sapphire substrates respectively, well below the 48 meV value previously reported in the literature.In collaboration with Lockheed Martin Fairchild Systems (LMFS), IR thermal imaging has been obtained from InSb FPA's on GaAs and Si substrates. This is the first successful IR thermal imaging from heteroepitaxially grown InSb. Because of the high quality substrates, larger areas, and higher yields, this technology is very promising for challenging traditional InSb FPA hybrid technology.

High-Performance Long-Wavelength Infrared HgCdTe Focal Plane Arrays Fabricated on CdSeTe Compliant Si Substrates

2010 ◽  
Vol 57 (4) ◽  
pp. 782-787 ◽  
Author(s):  
Priyalal S. Wijewarnasuriya ◽  
Yuanping Chen ◽  
Gregory Brill ◽  
Bahram Zandi ◽  
Nibir K. Dhar
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Long Wavelength ◽  
Si Substrates ◽  
Long Wavelength Infrared

Deposition and Characterization of Pyroelectric PMN-PT Thin Films for Uncooled Infrared Focal Plane Arrays

2011 ◽  
Vol 687 ◽  
pp. 242-246
Author(s):  
Yan Xue Tang ◽  
Yue Tian ◽  
Fei Fei Wang ◽  
Wang Zhou Shi
Keyword(s):  
Thin Films ◽  
Focal Plane ◽  
High Performance ◽  
Pyroelectric Coefficient ◽  
Focal Plane Arrays ◽  
Infrared Focal Plane Arrays ◽  
Si Substrates ◽  
Low Dielectric ◽  
Device Applications ◽  
Electric Filed

Modern uncooled infrared focal plane arrays (UFPA) development is oriented toward silicon microstructure monolithic arrays by employing pyroelectric thin films with continuing trends in high performance and miniaturization. In order to exploit high performance pyroelectric thin films, (1−x)Pb(Mg1/3Nb2/3)O3−xPbTiO3(PMN-PT) thin films withx= 0.26 were deposited on LaNiO3/Si substrates by the radio-frequency magnetron sputtering technique. (110) preferred orientation thin films with pure perovskite structures were obtained at a substrate temperature of 500°C. The ferroelectric, dielectric and pyroelectric properties of the films were investigated. The films show a typical polarization – electric filed hysteresis loop with a large remnant polarization of 17.2 μC/cm2. At room temperature, the high pyroelectric coefficient of 3.1 × 10-4C/m2K together with low dielectric constant of 470 and loss tangent of 0.04 render the film promising for uncooled infrared device applications. The origin of the differences in electrical properties between the films and bulk materials has also been discussed.

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

1995 ◽  
Vol 399 ◽  
Author(s):  
Cengiz S. Ozkan ◽  
William D. Nix ◽  
Huajian Gao
Keyword(s):  
Strain Relaxation ◽  
Depth Profiling ◽  
Surface Roughening ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Anisotropic Elastic

ABSTRACTSurface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

scholarly journals Enhancement of Chloroprene/Natural/Butadiene Rubber Nanocomposite Properties Using Organoclays and Their Combination with Carbon Black as Fillers

Polymers ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1085
Author(s):  
Patricia Castaño-Rivera ◽  
Isabel Calle-Holguín ◽  
Johanna Castaño ◽  
Gustavo Cabrera-Barjas ◽  
Karen Galvez-Garrido ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Carbon Black ◽  
High Performance ◽  
Rubber Matrix ◽  
Butadiene Rubber ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rubber Blends ◽  
Ft Ir ◽  
Chloroprene Rubber

Organoclay nanoparticles (Cloisite® C10A, Cloisite® C15) and their combination with carbon black (N330) were studied as fillers in chloroprene/natural/butadiene rubber blends to prepare nanocomposites. The effect of filler type and load on the physical mechanical properties of nanocomposites was determined and correlated with its structure, compatibility and cure properties using Fourier Transformed Infrared (FT-IR), X-ray Diffraction (XRD), Thermogravimetric Analysis (TGA) and rheometric analysis. Physical mechanical properties were improved by organoclays at 5–7 phr. Nanocomposites with organoclays exhibited a remarkable increase up to 46% in abrasion resistance. The improvement in properties was attributed to good organoclay dispersion in the rubber matrix and to the compatibility between them and the chloroprene rubber. Carbon black at a 40 phr load was not the optimal concentration to interact with organoclays. The present study confirmed that organoclays can be a reinforcing filler for high performance applications in rubber nanocomposites.

Rapid Thermal Oxidation for Passivation of Porous Silicon

1994 ◽  
Vol 342 ◽  
Author(s):  
I. BÁrsony ◽  
J.G.E. Klappe ◽  
É. Vázsonyi ◽  
T. Lohner ◽  
M. Fried
Keyword(s):  
Porous Silicon ◽  
Mechanical Stability ◽  
Porous Substrate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Tetragonal Lattice ◽  
Optical Heating ◽  
Vertical Inhomogeneity ◽  
Highly Porous

ABSTRACTChemical and mechanical stability of porous silicon layers (PSL) is the prerequisite of any active (luminescent) or passive (e.g. porous substrate) integrated applications. In this work X-ray diffraction (XRD) was used to analyze quantitatively the strain distribution obtained in different morphology PSL that were prepared on (100) p and p+Si substrates. Tetragonal lattice constant distortion can be as high as 1.4% in highly porous “as-prepared” samples. Incoherent optical heating RTO is governed by the absorption in the oxidized specimen. PSL show vertical inhomogeneity according to interpretation of spectroscopic ellipsometry (SE) data. Oxygen incorporation during RTO is controlled by specific surface (in p+ proportional, in p inversely proportional with porosity), while the developing compressive stress depends on pore size, and decreases with porosity in both morphologies.

Advanced III/V quantum-structure devices for high performance infrared focal plane arrays

2009 ◽  
Author(s):  
Robert Rehm ◽  
Martin Walther ◽  
Johannes Schmitz ◽  
Frank Rutz ◽  
Joachim Fleissner ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Quantum Structure ◽  
Infrared Focal Plane Arrays

Effect of Yttria-Stabilized Zirconia Concentration in an Electroless Bath on Microstructure and Composition of Ni/Yttria-Stabilized Zirconia Nanocomposite

2021 ◽  
Vol 21 (11) ◽  
pp. 5592-5602
Author(s):  
Samira Almasi ◽  
Ali Mohammad Rashidi
Keyword(s):  
High Performance ◽  
Yttria Stabilized Zirconia ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Nickel Ion ◽  
Nanocomposite Particles ◽  
X Ray ◽  
Ni Content ◽  
Naoh Solution ◽  
Average Size

The effect of the yttria-stabilized zirconia (YSZ) nanoparticle loading in an electro-less bath was considered as one of the vital synthesis variables for control Ni content and microstructure of prepared nanocomposite particles, which are two crucial factors to achieving high-performance SOFC anode. Nanocomposite particles were prepared using a simple electroless method without any expensive pretreatment of sensitizing by Sn2+ ions as well as activating by Pd2+ ions that are usually used to apply nickel coating on the surface of a non-conductive substrate. The process was performed by adding YSZ nanoparticles into NaOH solution, separating them from the solution by the centrifugal method, then providing several water-based nanofluids with different concentrations of activated YSZ nanoparticles, mixing them with NiCI2 solution, followed by adding the hydrazine and then NaOH solution. X-ray diffraction and scanning electron microscopy coupled with energy dispersive X-ray analysis were used to analyze the prepared nanocomposite particles. It is observed that after adding YSZ nanoparticles into the NaOH solution, the pH of the solution varied gradually from a starting pH of 10.2 to 9. Also, by increasing the YSZ nanoparticles loading in the electroless bath from 76 mg/l to 126 mg/l, the grain size of Ni deposits, the Ni content and the average size of the prepared nanocomposite particles decreased. The electrochemical mechanism previously proposed for the nickel ion reduction was modified, and a novel analytical model was proposed for variation of the efficiency of Ni deposition with YSZ nanoparticles loading.

High performance type II superlattice focal plane array with 6μm cutoff wavelength

2016 ◽  
Author(s):  
Kouhei Miura ◽  
Ken-ichi Machinaga ◽  
Sundararajan Balasekaran ◽  
Takahiko Kawahara ◽  
Masaki Migita ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Array ◽  
Cutoff Wavelength ◽  
Type Ii ◽  
Type Ii Superlattice
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