Strain Relaxation During Solid-Phase Epitaxial Crystallisation Of GexSi1−x Alloy Layers with Depth Dependent Ge Compositions

1993 ◽  
Vol 321 ◽  
Author(s):  
Wah-Chung Wong ◽  
Robert G. Elliman
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Excellent Agreement ◽  
Critical Thickness ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Critical Values ◽  
Reliable Indicator ◽  
Critical Dose ◽  
Velocity Reduction

ABSTRACTSolid-phase epitaxial growth (SPEG) of amorphous GeSi alloy layers has been examined. It is shown that fully strained depth dependent GeSi alloy layers can be produced by multiple ion-implantation and SPEG for implant doses below critical values. For doses above these critical values strain relaxation is shown to occur during SPEG at a well defined depth, and to be correlated with a reduction in the SPEG velocity caused by roughening or faceting of the crystalline/amorphous interface. The velocity reduction is shown to be a reliable indicator of strain relaxation. Both the critical dose and the depth at which strain relaxation occurs are shown to be in excellent agreement with equilibrium critical thickness theory.

High Dose Ion Implantation for the Synthesis of Si1−xGex Alloys

1990 ◽  
Vol 201 ◽  
Author(s):  
D. J. Howard ◽  
D. C. Paine ◽  
N. G. Stoffel
Keyword(s):  
Ion Implantation ◽  
Peak Concentration ◽  
Strain Energy ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Stacking Faults ◽  
High Density ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Theoretical Predictions

AbstractHigh dose ion implantation followed by solid phase epitaxy has been investigated for use in the synthesis of defect-free graded alloys of Si1−xGex. Two implanted alloy systems were studied: (i) 200 keV 74Ge into <001> Si to form Si-rich alloys and (ii) 150 keV 29Si into <001> Ge to form Ge-rich alloys. After regrowth by solid phase epitaxy the Ge-rich alloys are strained in tension while the Si-rich alloys are in compression and, as a result, strain relaxation is anticipated above a critical dose. We report that solid phase epitaxy at 550°C following implantation of Si into <001> Ge at an energy of 150 keV allowed the defect-free regrowth of alloys with peak concentrations of 11 ± 2 at. % Si (fluence of 7.7 × l016/cm2). Ge was implanted at 200 keV into <001> Si to a peak concentration of 7 at. % (fluence of 3.6 × l016/cm2) and was regrown without the introduction of defects whereas samples implanted to a peak concentration of 13 at. % (fluence of 5.3 × l016/cm2) contained a high density of stacking faults. These experimental observations are compared to theoretical predictions that are based on the strain energy approach.

Solid‐phase epitaxial growth of Ge‐Si alloys made by ion implantation

1992 ◽  
Vol 71 (6) ◽  
pp. 2644-2649 ◽  
Author(s):  
F. Corni ◽  
S. Frabboni ◽  
G. Ottaviani ◽  
G. Queirolo ◽  
D. Bisero ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Solid Phase

Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3403-3408
Author(s):  
Fabio Isa ◽  
Arik Jung ◽  
Marco Salvalaglio ◽  
Yadira Arroyo Rojas Dasilva ◽  
Mojmír Meduňa ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Plastic Strain ◽  
Epitaxial Growth ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Space Filling ◽  
X Ray ◽  
Semiconductor Structures ◽  
Equilibrium Growth ◽  
Innovative Concept

ABSTRACT We present a new concept applicable to the epitaxial growth of dislocation-free semiconductor structures on a mismatched substrate with a thickness far exceeding the conventional critical thickness for plastic strain relaxation. This innovative concept is based on the out-of-equilibrium growth of compositionally graded alloys on deeply patterned substrates. We obtain space-filling arrays of individual crystals several micrometers wide in which the mechanism of strain relaxation is fundamentally changed from plastic to elastic. The complete absence of dislocations at and near the heterointerface may pave the way to realize CMOS integrated SiGe X-ray detectors.

Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation

1980 ◽  
Vol 19 (5) ◽  
pp. 831-837 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Shuichi Saitoh ◽  
Seijiro Furukawa
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Carbon Ion

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

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