Solid‐phase epitaxial growth of Ge‐Si alloys made by ion implantation

1992 ◽  
Vol 71 (6) ◽  
pp. 2644-2649 ◽  
Author(s):  
F. Corni ◽  
S. Frabboni ◽  
G. Ottaviani ◽  
G. Queirolo ◽  
D. Bisero ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Solid Phase

Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation

1980 ◽  
Vol 19 (5) ◽  
pp. 831-837 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Shuichi Saitoh ◽  
Seijiro Furukawa
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Carbon Ion

Strain Relaxation During Solid-Phase Epitaxial Crystallisation Of GexSi1−x Alloy Layers with Depth Dependent Ge Compositions

1993 ◽  
Vol 321 ◽  
Author(s):  
Wah-Chung Wong ◽  
Robert G. Elliman
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Excellent Agreement ◽  
Critical Thickness ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Critical Values ◽  
Reliable Indicator ◽  
Critical Dose ◽  
Velocity Reduction

ABSTRACTSolid-phase epitaxial growth (SPEG) of amorphous GeSi alloy layers has been examined. It is shown that fully strained depth dependent GeSi alloy layers can be produced by multiple ion-implantation and SPEG for implant doses below critical values. For doses above these critical values strain relaxation is shown to occur during SPEG at a well defined depth, and to be correlated with a reduction in the SPEG velocity caused by roughening or faceting of the crystalline/amorphous interface. The velocity reduction is shown to be a reliable indicator of strain relaxation. Both the critical dose and the depth at which strain relaxation occurs are shown to be in excellent agreement with equilibrium critical thickness theory.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

Solid-Phase Epitaxial Growth of an Alumina Layer Having a Stacking-Mismatched Domain Structure of the Intermediate γ-Phase

2018 ◽  
Vol 10 (48) ◽  
pp. 41487-41496 ◽  
Author(s):  
Jeonghwan Jang ◽  
Seung-Yong Lee ◽  
Hwanyeol Park ◽  
Sangmoon Yoon ◽  
Gyeong-Su Park ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Domain Structure ◽  
Solid Phase ◽  
Alumina Layer
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