Defect and Island Formation in Stranski-Krastanov Growth of Ge on Si (001)

1993 ◽  
Vol 317 ◽  
Author(s):  
Akira Sakai ◽  
Toru Tatsumi
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Temperatures ◽  
Molecular Beam ◽  
Island Formation ◽  
Nucleation Mode

ABSTRACTWe have examined macroscopic island (Macro-island) formation in Stranski-Krastanov (SK) growth of Ge on Si (001) surfaces at various growth temperatures in molecular beam epitaxy (MBE). The nucleation mode of Macro-island formation was observed to be predominantly heterogeneous at medium growth temperatures less than 450°C, but homogeneous at high temperatures. In the heterogeneous Mode, Macro-island formation is mediated by particular V-shaped defects running preferentially along the <110> direction, which form as a result of coalescence of the well-faceted islands.

Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy

2012 ◽  
Vol 5 (8) ◽  
pp. 085501 ◽  
Author(s):  
Kyu Man Cha ◽  
Isao Horiuchi ◽  
Kenji Shibata ◽  
Kazuhiko Hirakawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
High Temperatures ◽  
Molecular Beam ◽  
Inas Quantum Dots

The Effect of Deposition Method on Growth Morphology - Comparison of Molecular Beam Epitaxy, Ion Beam Assisted Deposition and Sputter Deposition

1998 ◽  
Vol 528 ◽  
Author(s):  
Th. Michely ◽  
M. Kalff ◽  
G. Comsa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Film Structure ◽  
Sputter Deposition ◽  
Formation Mechanisms ◽  
Island Formation ◽  
Ion Beam Assisted Deposition ◽  
Film Roughness

AbstractThin films created by the deposition or under influence of atoms with hyperthermal energies (E = 100 -104eV) exhibit properties which differ in many respects from those of films created by deposition of atoms with thermal energy. The morphologies of thin Pt-films deposited on Pt(111) under otherwise identical deposition conditions by molecular beam epitaxy (MBE), ion beam assisted deposition (IBAD) and sputter deposition (SD) differ in film structure size, island shapes and film roughness. The different film structure sizes are unambiguously traced back to two different island formation mechanisms inherent to these deposition methods. While in MBE the islands result from nucleation in a supersaturated adatom gas, in IBAD and SD they result by direct or indirect creation of adatom clusters as a consequence of single impacts of energetic atoms present in the depositing particle flux. The differences in film roughness are not only due to the different island formation mechanisms, but seem to be closely related to the different step edge structures at the growth front.

THE STUDIES OF THERMAL ANNEALING ON Pt/AlGaN GROWN ON Si(111) BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE)

2010 ◽  
Vol 24 (29) ◽  
pp. 2889-2898 ◽  
Author(s):  
M. Z. MOHD YUSOFF ◽  
Z. HASSAN ◽  
C. W. CHIN ◽  
S. M. THAHAB ◽  
H. ABU HASSAN
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Barrier Height ◽  
Thermal Annealing ◽  
Ideality Factor ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Sem Analysis ◽  
Metal Contacts ◽  
Island Formation

The application of thermal annealing at various annealing temperatures (473–1073 K) has been shown to significantly modify surface morphology of platinum ( Pt ) metal contacts on AlGaN / GaN / AlN heterostructure grown on silicon by plasma-assisted molecular beam epitaxy (PA-MBE). Structural analysis of the AlGaN / GaN samples used for the Pt Schottky contacts fabrication were performed by using high resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The Pt metal contacts were then deposited on the samples followed by current–voltage (I–V) characterization. Thermally-treated samples showed significant decrease in current compared with untreated samples. From the I–V measurements, the Schottky barrier height (SBH) and ideality factor (n) were calculated. We found that the lowest value of SBH obtained was 0.526 eV at 873 K annealing temperature. Unfortunately, there are no values for the SBH and ideality factor at 1073 K annealing temperature. The SEM analysis has shown some island formation at high annealing temperature due to the difference of surface energies between thin metal films and AlGaN that causes dewetting. We suggest that the reason for the barrier height reduction is due to the metal island formation on the samples.

Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures

2016 ◽  
Vol 439 ◽  
pp. 87-92 ◽  
Author(s):  
W.C. Yang ◽  
P.Y. Lee ◽  
H.Y. Tseng ◽  
C.W. Lin ◽  
Y.T. Tseng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Temperatures ◽  
Molecular Beam

Gallium desorption from GaAs and (Al,Ga)As during molecular beam epitaxy growth at high temperatures

1990 ◽  
Vol 57 (12) ◽  
pp. 1203-1205 ◽  
Author(s):  
E. M. Gibson ◽  
C. T. Foxon ◽  
J. Zhang ◽  
B. A. Joyce
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Temperatures ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth
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