Thermally Stable Oxygen and Nitrogen Implant Isolation of C-Doped Al0.35Ga0.65As

1993 ◽  
Vol 316 ◽  
Author(s):  
J. C. Zolper ◽  
M. E. Sherwin ◽  
A. G. Baca ◽  
R. P. Schneider
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Resistivity ◽  
Thermally Stable ◽  
Stable Oxygen ◽  
Si Doped ◽  
Nitrogen Ion ◽  
First Time ◽  
Resistance Data ◽  
Anneal Temperature

ABSTRACTOxygen and nitrogen ion implantation have been applied, for the first time, to C-doped Al0.35Ga0.65As layers produce high resistivity regions (ps ≥ 1×1010 Ω/□) that are stable after annealing at 900 ºC. A dose threshold for stable compensation for both O and N ions was found above 8×1013 cm-2 for samples doped at 2×1018 cm-3. Although O implantation has been reported to form stable compensation in Si-doped and Be-doped AlGaAs, the ability of nitrogen implantation to produce thermally stable compensation has not been previously reported and may be due to a C-N complex. The existence of this C-N complex is supported by results for O- and N-implants into C-doped GaAs where N formed thermally stable compensation but O did not. Sheet resistance data versus anneal temperature and estimates of the depth of the defect levels are reported. This result will have application to heterojunction bipolar transistors and complementary heterostructure field effect transistor technologies that employ C-doped AlGaAs or GaAs layers along with high temperature post-isolation processing.

Formation of p+ and High Resistivity Regions in GaAs-AIGaAs Heterojunctions

1987 ◽  
Vol 92 ◽  
Author(s):  
S. J. Pearton ◽  
J. M. Brown ◽  
K. T. Short
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Annealing Temperature ◽  
Bipolar Transistors ◽  
High Resistivity ◽  
Dopant Profile

ABSTRACTThe formation of p+ and high resistivity layers in GaAs-AIGaAs heterostructures is useful in a number of applications, including the fabrication of heterojunction bipolar transistors (HBTs). Control of the implanted dopant profile during annealing is paramount for rapidly diffusing acceptor species such as Be and Mg, and we show SIMS data of the dopant profile in implanted heterojunctions as a function of annealing temperature in the range 700–900°C for 1–5 sec. Annealing of implanted Be at ≥800°C even at a dose of 2×10l5cm−2 results in complete activation whereas Mg shows only 30% activation under these conditions. There is no significant interface disordering visible by TEM or RBS for either case. Multiple energy O implants (up to and including 1 MeV) were used to render the entire heterostructure resistive; for doses of ∼1013cm−2, the O bombarded layers showed resistivities of 108 Ω/□ after 525°C annealing.

Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation

2015 ◽  
Vol 7 (3-4) ◽  
pp. 279-285 ◽  
Author(s):  
Nick G.M. Tao ◽  
Bo-Rong Lin ◽  
Chien-Ping Lee ◽  
Tim Henderson ◽  
Barry J.F. Lin
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Computer Aided Design ◽  
Impact Ionization ◽  
Failure Mechanisms ◽  
Bipolar Transistors ◽  
Physical Models ◽  
Aided Design ◽  
First Time ◽  
Safe Operating ◽  
Tcad Simulations

The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors has been studied using two-dimensional Technology Computer-Aided Design (TCAD) tool. Comprehensive physical models, including hydrodynamic transport-based impact ionization and self-heating models were implemented. The simulations for two DC modes (constant Iband Vbmodes) captured all the SOA features observed in measurements and some failure mechanisms were revealed for the first time by TCAD simulations. The simulated results are also in agreement with analytical modeling. The simulation not only gives us insight to the detailed failure mechanisms, but also provides guidance for the design of devices with better ruggedness and improved SOA performances.

Characteristics of μc-Si:H for Si Heterojunction Bipolar Transistors

1989 ◽  
Vol 164 ◽  
Author(s):  
H. Fujioka ◽  
M. Ito ◽  
K. Takasaki
Keyword(s):  
Thermal Stability ◽  
Hydrogen Concentration ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Doping ◽  
Thermally Stable ◽  
Fluorine Doping ◽  
Hydrogen Atoms ◽  
Thermal Stability Of ◽  
Crystalline Growth

AbstractTo improve the thermal stability of the Si heterojunction bipolar transistors (HBTs), we studied the effect of carbon and fluorine doping on μc-Si:H characteristics. We found that carbon doping suppresses crystalline growth and increases the hydrogen concentration in the film, and that fluorine atoms are more thermally stable than hydrogen atoms. We confirmed that carbon or fluorine doping is promising for use with the μc-Si:H HBT.

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

(GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base

1983 ◽  
Vol 19 (10) ◽  
pp. 367 ◽  
Author(s):  
D.L. Miller ◽  
P.M. Asbeck ◽  
R.J. Anderson ◽  
F.H. Eisen
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors
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