A Critical Regime for Amorphization of Ion Implanted Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
R. D. Goldberg ◽  
J. S. Williams ◽  
R. G. Elliman
Keyword(s):  
Damage Accumulation ◽  
Anomalous Behaviour ◽  
Critical Regime ◽  
Extended Defects ◽  
Complex Defect ◽  
Defect Annealing ◽  
Defect Accumulation ◽  
Residual Damage ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTA critical regime has been identified for ion implanted silicon where only slight changes in temperature can dramatically affect the levels of residual damage. In this regime decreases of only 5° C are sufficient to induce a crystalline-to-amorphous transformation in material which only exhibited the build-up of extended defects at higher temperatures. Traditional models of damage accumulation and amorphization have proven inapplicable to this regime which exists whenever dynamic defect annealing and damage production are closely balanced. Irradiating ion flux, mass and fluence have all been shown to influence the temperature— which varies over a range of 300° C for ion species ranging from C to Xe—at which the anomalous behaviour occurs. The influence of ion fluence suggests that complex defect accumulation plays an important role in amorphization. Results are presented which further suggest that the process is nucleation limited in this critical regime.

A Critical Regime for AMorphization of Ion Implanted Silicon

1993 ◽  
Vol 321 ◽  
Author(s):  
R. D. Goldberg ◽  
J. S. Williams ◽  
R. G. Elliman
Keyword(s):  
Damage Accumulation ◽  
Anomalous Behaviour ◽  
Critical Regime ◽  
Extended Defects ◽  
Complex Defect ◽  
Defect Annealing ◽  
Defect Accumulation ◽  
Residual Damage ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTA critical regime has been identified for ion implanted silicon where only slight changes in temperature can dramatically affect the levels of residual damage. In this regime decreases of only 5° C aie sufficient to induce a crystalline-to-amorphous transformation in material which only exhibited the build-up of extended defects at higher temperatures. Traditional Models of damage accumulation and amorphization have proven inapplicable to this regime which exists whenever dynamic defect annealing and damage production are closely balanced. Irradiating ion flux, Mass and fluence have all been shown to influence the temperature—which varies over a range of 300° C for ion species ranging from C to Xe—at which the anomalous behaviour occurs. The influence of ion fluence suggests that complex defect accumulation plays an important role in amorphization. Results are presented which further suggest that the process is nucleation limited in this critical regime.

Dynamic Annealing and Amorphous Phase Formation in Si, GaAs and AlGaAs Under Ion Irradiation

1993 ◽  
Vol 316 ◽  
Author(s):  
J.S. Williams ◽  
H.H. Tan ◽  
R.D. Goldberg ◽  
R.A. Brown ◽  
C. Jagadish
Keyword(s):  
Dose Rate ◽  
Amorphous Phase ◽  
Phase Formation ◽  
Ion Irradiation ◽  
Critical Regime ◽  
Extended Defects ◽  
Defect Annealing ◽  
Ion Damage ◽  
Residual Damage ◽  
Amorphous Phase Formation

ABSTRACTIon damage processes and amorphous phase formation are compared in Si, GaAs and Alx Ga1-x As materials in the critical regime where dynamic defect annealing is strongly competing with ion damage production. It is shown that the nature of residual damage is very strongly dependent on temperature, ion dose and dose rate in this critical regime for both Si and GaAs and that the amorphous phase can be “nucleated” by high levels of extended defects. In Alx Ga1-x As, the amorphous phase is increasingly more difficult to nucleate with increasing Al concentration at LN2 temperature but can be nucleated at sufficiently high implantation doses for all Al concentrations. No dose rate effect is observed for Alx Ga1-x As. This behaviour is discussed in terms of the availability of mobile defects and bonding configurational changes during irradiation.

Characterization of interstitial defect clusters in ion-implanted Si

1997 ◽  
Vol 469 ◽  
Author(s):  
J. L. Benton ◽  
S. Libertino ◽  
S. Coffa ◽  
D. J. Eaglesham
Keyword(s):  
Deep Level ◽  
Extended Defects ◽  
Enhanced Diffusion ◽  
Si Substrates ◽  
Interstitial Defect ◽  
Defect Growth ◽  
Diffusion Phenomena ◽  
Residual Damage ◽  
Transient Spectroscopy ◽  
Ion Implanted

ABSTRACTWe have investigated the properties of Si interstitial clusters in ion implanted crystalline Si. Deep Level Transient Spectroscopy measurements have been used to characterize the residual damage in Si samples implanted with Si ions at fluence in the range 1×109-1×1012/cm2 and annealed at temperatures of 100–700 °C. We have found that, in the fluence and annealing temperature range where extended defects are not formed, the residual damage is dominated by Si interstitial clusters which introduce deep levels at Ev+0.36 eV and at Ev+O-53 eV. By using Si substrates with a different impurity and dopant content, we have found that C, O and B play a role in determining the defect growth kinetics but are not the main constituents of these clusters. We estimate that 40 to 125 Si self intersti-tials are stored in these clusters and believe that they are the main source of Si self-inter-stitials in transient enhanced diffusion phenomena occurring in the absence of {311} or extended defects.

THE DEFECT STRUCTURE OF ION-IMPLANTED AlxGa1−xAs/GaAs SUPERLATFICES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.C. DE COOMAN ◽  
C.B. CARTER ◽  
J. RALSTON ◽  
G.W. WICKS ◽  
L.F. EASTMAN
Keyword(s):  
Electron Microscopy ◽  
Point Defects ◽  
Strain Field ◽  
Defect Structure ◽  
Extended Defects ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Residual Damage ◽  
Ion Implanted

AbstractCross-sectional transmission electron microscopy (XTEM) has been used to study the defect structure and intermixing of ion-implanted and annealed AlxGa1−xAs/GaAs superlattices. The results show clearly that the layer intermixing depends on mass and energy of the implanted species and the annealing conditions. The temperature and duration of annealing determines mainly the amount of residual damage. In addition it was observed that in all cases the point-defects agglomeration was influenced by the strain field present at the layer interfaces; extended defects nucleate preferentially in the GaAs layers.

Extended defects in ion-implanted si during nanosecond laser annealing

2014 ◽  
Author(s):  
F. Cristiano ◽  
Y. Qiu ◽  
E. Bedel-Pereira ◽  
K. Huet ◽  
F. Mazzamuto ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Extended Defects ◽  
Ion Implanted

Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors

2017 ◽  
Vol 122 (11) ◽  
pp. 115701 ◽  
Author(s):  
Alexander Azarov ◽  
Augustinas Galeckas ◽  
Elke Wendler ◽  
Josef Ellingsen ◽  
Edouard Monakhov ◽  
...  
Keyword(s):  
Oxide Semiconductors ◽  
Defect Annealing ◽  
Ion Implanted

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

Extended defects of ion‐implanted GaAs

1991 ◽  
Vol 70 (11) ◽  
pp. 6790-6795 ◽  
Author(s):  
K. S. Jones ◽  
E. L. Allen ◽  
H. G. Robinson ◽  
D. A. Stevenson ◽  
M. D. Deal ◽  
...  
Keyword(s):  
Extended Defects ◽  
Ion Implanted

Proton backscattering by point and extended defects in ion-implanted Si

2009 ◽  
Vol 6 (8) ◽  
pp. 1807-1810 ◽  
Author(s):  
Nikolay Sobolev ◽  
Vladimir Sakharov ◽  
Igor Serenkov ◽  
Anton Kalyadin ◽  
Vladimir Vdovin
Keyword(s):  
Extended Defects ◽  
Ion Implanted

Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices

1985 ◽  
Vol 24 (Part 1, No. 11) ◽  
pp. 1498-1502 ◽  
Author(s):  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Ion Species ◽  
Ion Implanted
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