Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors

2017 ◽  
Vol 122 (11) ◽  
pp. 115701 ◽  
Author(s):  
Alexander Azarov ◽  
Augustinas Galeckas ◽  
Elke Wendler ◽  
Josef Ellingsen ◽  
Edouard Monakhov ◽  
...  
Keyword(s):  
Oxide Semiconductors ◽  
Defect Annealing ◽  
Ion Implanted

A Critical Regime for Amorphization of Ion Implanted Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
R. D. Goldberg ◽  
J. S. Williams ◽  
R. G. Elliman
Keyword(s):  
Damage Accumulation ◽  
Anomalous Behaviour ◽  
Critical Regime ◽  
Extended Defects ◽  
Complex Defect ◽  
Defect Annealing ◽  
Defect Accumulation ◽  
Residual Damage ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTA critical regime has been identified for ion implanted silicon where only slight changes in temperature can dramatically affect the levels of residual damage. In this regime decreases of only 5° C are sufficient to induce a crystalline-to-amorphous transformation in material which only exhibited the build-up of extended defects at higher temperatures. Traditional models of damage accumulation and amorphization have proven inapplicable to this regime which exists whenever dynamic defect annealing and damage production are closely balanced. Irradiating ion flux, mass and fluence have all been shown to influence the temperature— which varies over a range of 300° C for ion species ranging from C to Xe—at which the anomalous behaviour occurs. The influence of ion fluence suggests that complex defect accumulation plays an important role in amorphization. Results are presented which further suggest that the process is nucleation limited in this critical regime.

Defect annealing investigation in ion implanted Si by CESR technique

1976 ◽  
Vol 31 (1) ◽  
pp. 37-40 ◽  
Author(s):  
A. V. Dvurechensky ◽  
N. N. Cerasimenko ◽  
V. B. Glazman
Keyword(s):  
Defect Annealing ◽  
Ion Implanted

scholarly journals Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure

1997 ◽  
Vol 2 ◽  
Author(s):  
A. Pelzmann ◽  
S. Strite ◽  
A. Dommann ◽  
C. Kirchner ◽  
Markus Kamp ◽  
...  
Keyword(s):  
Optical Quality ◽  
X Ray Diffraction ◽  
High Optical Quality ◽  
X Ray ◽  
Mocvd Reactor ◽  
Defect Annealing ◽  
Optical Activation ◽  
Gan Crystal ◽  
Ion Implanted

We investigated the properties of ion-implanted GaN:Zn annealed under various conditions using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD). Epitaxial GaN/sapphire of high optical quality was ion-implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV. The sample was capped with 200 Å of SiNx and then diced into numerous pieces which were annealed under varied conditions in an attempt to optically activate the Zn. Annealing was performed in a tube furnace under flowing N2, an atmospheric pressure MOCVD reactor under flowing NH3 or N2, and under an N2 overpressure of 190 atm. The observed improvement in the optical quality of GaN:Zn annealed under N2 overpressure yields further insights into the trade-off between defect annealing and N loss from the GaN crystal.

Concentration and ion-energy-independent annealing kinetics during ion-implanted-defect annealing

2005 ◽  
Vol 86 (3) ◽  
pp. 031912 ◽  
Author(s):  
R. Karmouch ◽  
J.-F. Mercure ◽  
Y. Anahory ◽  
F. Schiettekatte
Keyword(s):  
Ion Energy ◽  
Defect Annealing ◽  
Ion Implanted

Defect annealing in ion implanted silicon carbide

1997 ◽  
Vol 12 (7) ◽  
pp. 1727-1733 ◽  
Author(s):  
L. Calcagno ◽  
M. G. Grimaldi ◽  
P. Musumeci
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Optical Measurements ◽  
Temperature Range ◽  
Damage Degree ◽  
Defect Annealing ◽  
Initial Damage ◽  
Lattice Damage ◽  
Amorphous States ◽  
Ion Implanted

The recovery of lattice damage in ion implanted 6H-SiC single crystals by thermal annealing has been investigated in the temperature range 200–1000 °C by Rutherford backscattering spectrometry-channeling and by optical measurements in the UV-visible wavelength. The damage was produced by implantation at room temperature of 60 keV N+ at fluences between 1014 and 5 × 1015 ions/cm2. At low fluences a partially damaged layer with defects distributed over a depth comparable to the projected ion range was obtained. At higher fluences a continuous amorphous layer was formed. The defect annealing behavior depended on the initial damage morphology: an almost total defect recovery occurred in partially damaged layers with kinetics depending on the initial damage degree. If the defect concentration is smaller than 20 at.% the annealing rate is independent of temperature. Amorphous layers were stable in the investigated temperature range and no epitaxial regrowth occurred. After annealing, a strong change in the optical properties of the amorphous phase was observed indicating a recovery of the electronic properties of the material, suggesting the existence of several amorphous states and the relaxation of the amorphous that evolves toward thermodynamic states characterized by lower free energy values.

A Critical Regime for AMorphization of Ion Implanted Silicon

1993 ◽  
Vol 321 ◽  
Author(s):  
R. D. Goldberg ◽  
J. S. Williams ◽  
R. G. Elliman
Keyword(s):  
Damage Accumulation ◽  
Anomalous Behaviour ◽  
Critical Regime ◽  
Extended Defects ◽  
Complex Defect ◽  
Defect Annealing ◽  
Defect Accumulation ◽  
Residual Damage ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTA critical regime has been identified for ion implanted silicon where only slight changes in temperature can dramatically affect the levels of residual damage. In this regime decreases of only 5° C aie sufficient to induce a crystalline-to-amorphous transformation in material which only exhibited the build-up of extended defects at higher temperatures. Traditional Models of damage accumulation and amorphization have proven inapplicable to this regime which exists whenever dynamic defect annealing and damage production are closely balanced. Irradiating ion flux, Mass and fluence have all been shown to influence the temperature—which varies over a range of 300° C for ion species ranging from C to Xe—at which the anomalous behaviour occurs. The influence of ion fluence suggests that complex defect accumulation plays an important role in amorphization. Results are presented which further suggest that the process is nucleation limited in this critical regime.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

Preparation of Backthinned Ceramic Specimens

1985 ◽  
Vol 43 ◽  
pp. 182-183
Author(s):  
A. T. Fisher ◽  
P. Angelini
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Vacuum System ◽  
Back Surface ◽  
Surface Microstructure ◽  
Ion Milling ◽  
Near Surface ◽  
Depth Profiles ◽  
Analytical Electron ◽  
Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

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