Characterization of interstitial defect clusters in ion-implanted Si

1997 ◽  
Vol 469 ◽  
Author(s):  
J. L. Benton ◽  
S. Libertino ◽  
S. Coffa ◽  
D. J. Eaglesham
Keyword(s):  
Deep Level ◽  
Extended Defects ◽  
Enhanced Diffusion ◽  
Si Substrates ◽  
Interstitial Defect ◽  
Defect Growth ◽  
Diffusion Phenomena ◽  
Residual Damage ◽  
Transient Spectroscopy ◽  
Ion Implanted

ABSTRACTWe have investigated the properties of Si interstitial clusters in ion implanted crystalline Si. Deep Level Transient Spectroscopy measurements have been used to characterize the residual damage in Si samples implanted with Si ions at fluence in the range 1×109-1×1012/cm2 and annealed at temperatures of 100–700 °C. We have found that, in the fluence and annealing temperature range where extended defects are not formed, the residual damage is dominated by Si interstitial clusters which introduce deep levels at Ev+0.36 eV and at Ev+O-53 eV. By using Si substrates with a different impurity and dopant content, we have found that C, O and B play a role in determining the defect growth kinetics but are not the main constituents of these clusters. We estimate that 40 to 125 Si self intersti-tials are stored in these clusters and believe that they are the main source of Si self-inter-stitials in transient enhanced diffusion phenomena occurring in the absence of {311} or extended defects.

The effect of the extra ion on residual damage in MeV implanted Si

1997 ◽  
Vol 469 ◽  
Author(s):  
S. Libertino ◽  
J. L. Benton ◽  
S. Coffa ◽  
D. C. Jacobson ◽  
D. J. Eaglesham ◽  
...  
Keyword(s):  
Defect Structure ◽  
Deep Level ◽  
Sample Surface ◽  
Residual Concentration ◽  
Defect Complexes ◽  
Concomitant Reduction ◽  
Residual Damage ◽  
Transient Spectroscopy ◽  
Kinetics Of ◽  
Ion Implanted

AbstractWe have investigated the defect structure of ion-implanted and electron irradiated crystalline Si using deep level transient spectroscopy measurements to characterize both vacancy-(V) and interstitial- (I) type defects and to monitor their evolution upon annealing at temperatures ≤ 600 °C. It is found that only 4% of the Frenkel pairs generated by the energetic particles escape direct recombination and are stored into an equal number of room temperature stable V- and I-type defect complexes. No difference is found in the defect structure and annealing kinetics of ion implanted (1.2 MeV Si to fluences between 1×109 to 1010/cm2) and electron irradiated (9.2 MeV to fluences between 1 and 3×1015/cm2) samples in spite of the fact that denser collision cascades are produced by the ions. Annealing treatments result in a concomitant reduction in the concentration of I and V-type defects, demonstrating that defect recombination occurs preferentially in the bulk and not at the sample surface. Finally, at temperature above 300 °C, when most of the vacancy-type defects have been recombined, a residual concentration of I-type defects is found in ion implanted samples. This interstitial excess, not detected in electron irradiated samples, provides a direct evidence of the imbalance between I and V concentration produced by the extra incorporated ion.

scholarly journals Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 279-284 ◽  
Author(s):  
O.F. Vyvenko ◽  
N.V. Bazlov ◽  
M.V. Trushin ◽  
A.A. Nadolinski ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Hydrogen ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Extended Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
Plasma Hydrogenation ◽  
Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique

1989 ◽  
Vol 158 ◽  
Author(s):  
Zheng Xu ◽  
Toshihiko Kosugi ◽  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Low Energy ◽  
Deposition Technique ◽  
Film Properties ◽  
Ion Beam Assisted Deposition ◽  
Current Voltage ◽  
Residual Damage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTW films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O−5 ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

1999 ◽  
Vol 564 ◽  
Author(s):  
Guo-Ping Ru ◽  
C. Detavernier ◽  
R. A. Donaton ◽  
A. Blondeel ◽  
P. Clauws ◽  
...  
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Milling Process ◽  
Schottky Contacts ◽  
Ion Beam Sputtering ◽  
Ion Milling ◽  
Si Substrates ◽  
Ballistic Electron ◽  
Beam Sputtering ◽  
Transient Spectroscopy

AbstractBallistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

On the Influence of Illumination During Ion Damage Defect Anneal of Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Tanabe ◽  
S. Ashok
Keyword(s):  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Minor Role ◽  
Extended Defects ◽  
Rapid Thermal Anneal ◽  
Thermal Generation ◽  
Ion Damage ◽  
Transient Spectroscopy ◽  
A Minor

AbstractAn exploratory deep level transient spectroscopy (DLTS) study on the possible role of illumination during thermal annealing has been carried out on Si with extended defects generated by Ar implantation and electron cyclotron resonance (ECR) hydrogen plasma. Experiments with rapid thermal anneal (RTA) using quartz-halogen lamps show only a minor role for illumination on anneal of defects generated by Ar ion damage as well as thermal generation of defects under post-hydrogenation anneal. However, significant differences are evident relative to conventional furnace anneal and it appears likely that recombination-assisted defect reactions may be quite significant in Si processing when high intensity sources such as arc lamps are adapted in RTA systems.

Electrical Properties of Clustered and Precipitated Iron in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 109-114
Author(s):  
R. Khalil ◽  
Vitaly V. Kveder ◽  
Wolfgang Schröter ◽  
Michael Seibt
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Iron Silicide ◽  
Electronic States ◽  
Moderate Temperature ◽  
Extended Defects ◽  
Characteristic Features ◽  
Transient Spectroscopy ◽  
The Stability

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

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