Morphology and Phase Metastability in the Al/Cu Thin Film Reaction.

1993 ◽  
Vol 311 ◽  
Author(s):  
E. D. McCarty ◽  
S. A. Hackney
Keyword(s):  
Average Diameter ◽  
Reaction Rates ◽  
Growth Interface ◽  
Plan View ◽  
Cu Films ◽  
High Reaction ◽  
Transmission Electron ◽  
Interdiffusion Process ◽  
Sputter Deposited ◽  
Cu Thin Film

ABSTRACTThe initial stages of the reaction between thin Al grains with an average diameter of 2 × 10−5mand sputter deposited, nanocrystalline Cu films has been studied in plan view using in situ transmission electron microscopy. At high reaction rates, the phase transformation in the Al grain resulting from the interdiffusion process is found to exhibit metastable growth morphologies characterized by negative curvature at the growth interface. The crystal structure of the initial phase formed in the Al grain under relatively high reaction rates is a metastable, orthorhombic distortion of the equilibrium body centered tetragonal θ phase. The distortion is found to vary with Al grain surface orientation. The degree of metastability can be experimentally correlated with the kinetics of the interdiffusion process as controlled by diffusion barrier thickness.

Microstructure of Al-Cu thin-film interconnect

1991 ◽  
Vol 49 ◽  
pp. 820-821
Author(s):  
J. H. Rose ◽  
J. R. Lloyd ◽  
A. Shepela ◽  
N. Riel
Keyword(s):  
Integrated Circuit ◽  
Present Contribution ◽  
Cu Films ◽  
Transmission Electron ◽  
History Of ◽  
Cu Interconnect ◽  
The Many ◽  
Cu Thin Film ◽  
Standard Life ◽  
Evolution Of Microstructure

The precipitate structure of bulk aluminum alloys was heavily studied with x-ray diffraction commencing in the 1930s and via direct observation with the development of transmission electron microscopy (TEM) techniques in the 1950s. In 1970, recognition of the electromigration performance benefits of Cu additions to Al interconnect in integrated circuit devices precipitated studies on Al-Cu thin films. However, the microstructure of these films remains only partially known, in part due to the many process and interconnect geometry variables. In particular, there has been minimal attempt to study films which mimic as closely as possible the environment and thermal history of real interconnect (prior studies typically have examined unpatterned or unpassivated films.) In the present work, Al-Cu films in standard life test devices have been studied. This work is directed at understanding the evolution of microstructure during device processing and life testing and application of this knowledge to a better understanding of the role of microstructure in electromigration in Al-Cu interconnect. The present contribution describes initial microstructural observations on a variety of annealed samples.

Deposition and anneal behavior of Al-1.5%Cu films: TEM characterization

1991 ◽  
Vol 49 ◽  
pp. 884-885
Author(s):  
N. David Theodore ◽  
Mike Dreyer ◽  
Charles Varker
Keyword(s):  
Integrated Circuits ◽  
Imaging Techniques ◽  
Dark Field ◽  
Time To Failure ◽  
Plan View ◽  
Cu Films ◽  
Transmission Electron ◽  
Grain Size Distributions ◽  
The Mean ◽  
Mean Time

Al-1.5%Cu materials are of interest for interconnect-metallization in semiconductor integrated-circuits. It is known from the literature that the mean-time-to-failure (MTF) due to electromigration of the Al-1.5%Cu interconnects depends on the microstructure of the materials. A correlation is seen for instance between grain-size distributions in the material and the MTF. Uniform large-grained distributions improve lifetime. The present study evaluated the microstructure of Al-1.5%Cu films deposited and annealed under different conditions.Al-1.5%Cu films had been deposited at 25°C and at 300°C; the layers had then been annealed at 300°C for 17 hours, prior to TEM investigation. Plan-view TEM specimens were prepared in the 100 substrategeometry, and cross-section TEM specimens were prepared in the 110 substrate-geometry. These were then analyzed using bright-field and dark-field TEM imaging techniques. A JEOL JEM 200CX transmission electron microscope was used for the investigation, operating at 200 kV.

A correlative study of microstructure and surface topography in Al-1.5%Cu films

1992 ◽  
Vol 50 (2) ◽  
pp. 1418-1419
Author(s):  
N. David Theodore ◽  
Bea Cao ◽  
Juan Carrejo ◽  
Peter A. Crozier
Keyword(s):  
Integrated Circuits ◽  
Surface Topography ◽  
Imaging Techniques ◽  
Dark Field ◽  
Material Surface ◽  
Silicon Dioxide Layer ◽  
Plan View ◽  
Cu Films ◽  
Transmission Electron ◽  
Multi Level

Al(Cu) is currently being used for interconnects in semiconductor integrated-circuits. Problems that arise with use of the material are electromigration, stress-migration, and corrosion. Electromigration and stress-migration behaviors of the films are known to depend on grain-sizes and distributions in the material. Surface topography of the films could possibly affect stress-migration as well as use of the material in multi-level metallization schemes. The present study investigates the extent of correlation between microstructure and surface topography in Al-1.5%Cu films.Substrates used for this study consisted of (100) silicon wafers with a 200 nm silicon-dioxide layer on top. Al(1.5%Cu) was sputtered onto the substrates; substrates were held at a temperature of 450°C during sputtering. Layer thicknesses were ∼740 nm. Scanning electron-microscopy was performed using a Cambridge 250-MK III SEM equipped with a heating stage. Plan-view TEM specimens were prepared in the 100 substrate-geometry. These were then analyzed using bright-field and dark-field TEM imaging techniques. A JEOL JEM 200CX transmission electron microscope was used for the investigation, operating at 200 kV.

The Effect of Deposition and Annealing Conditions on the Microstructure of Al-Cu and Al-Cu-Si Thin Films

1991 ◽  
Vol 229 ◽  
Author(s):  
M. Park ◽  
S. J. Krause ◽  
S. R. Wilson
Keyword(s):  
Single Phase ◽  
Alloy Composition ◽  
Phase Region ◽  
Annealed Condition ◽  
Two Phase ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Cu Thin Film

AbstractThe effect of deposition temperature and the addition of Si to sputter deposited Al-Cu thin-film microstructure was studied with transmission electron microscopy. Films were studied in the as-deposited and annealed condition. The effects of thermal treatment were studied with in-situ hot stage microscopy. Al2Cu (θ) precipitated at the grain boundaries and the sublayer interface. At higher deposition temperatures, with alloy composition in single phase region (Al-1.5 wt.%Cu), Al2Cu precipitated during cooldown. At lower temperatures, in the two phase Al-0 region, Al2Cu precipitated during deposition. The addition of Si caused formation of Si precipitates and retarded Al2Cu precipitation during deposition or cooldown.

A Comparison of AFM, SEM, and TEM Analysis of AL/SI/CU Thin Films

1992 ◽  
Vol 260 ◽  
Author(s):  
K. L. Westra ◽  
D. J. Thomson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Finite Size ◽  
Sem Analysis ◽  
Tem Analysis ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Sputter Deposited

ABSTRACTAtomic Force microscopy, scanning electron microscopy, and transmission electron microscopy was used to study Al/Si/Cu films sputter deposited at 2 and 45 mTorr. AFM and SEM analysis shows the films to consist of columnar structures commonly seen in PVD deposited thin films, while the TEM analysis showed the films be polycrystalline. Comparing the columnar structures seen in the AFM and SEM study to the grains found in the TEM study, we conclude that the columns consist of single grains. Thus for these films AFM or SEM analysis can be used to determine the grain size. Finally, an AFM scan of a Al/Si/Cu deposited via was performed. The AFM image clearly shows the high resolution of the AFM, while it also illustrates the problems caused by the finite size of the AFM tip.

scholarly journals The Application of Minimally Invasive Devices with Nanostructured Surface Functionalization: Antisticking Behavior on Devices and Liver Tissue Interface in Rat

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Li-Hsiang Lin ◽  
Ya-Ju Hsu ◽  
Hsi-Jen Chiang ◽  
Han-Yi Cheng ◽  
Che-Shun Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Injury ◽  
Cu Films ◽  
Transmission Electron ◽  
Temperature Transformation ◽  
Tissue Interface ◽  
Magnetic Resonance Imaging Mri ◽  
Cu Thin Film ◽  
Surface Morphologies ◽  
Homogeneous Temperature

This study investigated the thermal injury and adhesion property of a novel electrosurgery of liver using copper-doped diamond-like carbon (DLC-Cu) surface treatment. It is necessary to reduce the thermal damage of surrounding tissues for clinical electrosurgeries. The surface morphologies of stainless steel (SS) coated with DLC (DLC-Cu-SS) films were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Bionic liver models were reconstructed using magnetic resonance imaging (MRI) to simulate electrosurgery. Cell cytotoxicity assays showed that the DLC-Cu thin film was nontoxic. The temperature of tissue decreased significantly with use of the electrosurgical device with nanostructured DLC-Cu films and increased with increasing thickness of the films. Thermography revealed that the surgical temperature in the DLC-Cu-SS electrosurgical device was significantly lower than that in the untreated device in the animal model. Moreover, compared to the SS electrosurgical device, the DLC-Cu-SS electrosurgical device caused a relatively small injury area and lateral thermal effect. The results indicate that the DLC-Cu-SS electrosurgical device decreases excessive thermal injury and ensures homogeneous temperature transformation in the tissues.

Characterization of Transparent Conductors in Indium Zinc Oxide and Their Application to Thin-Film Transistor Liquid-Crystal Displays

1998 ◽  
Vol 508 ◽  
Author(s):  
H. Takatsuji ◽  
T. Hiromori ◽  
K. Tsujimoto ◽  
S. Tsuji ◽  
K. Kurodac ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Indium Tin Oxide ◽  
Amorphous Material ◽  
Thin Film Transistor ◽  
Amorphous Region ◽  
Transparent Conductors ◽  
Plan View ◽  
Indium Zinc Oxide ◽  
Transmission Electron ◽  
Sputter Deposited

AbstractInvestigation of the properties of indium zinc oxide (IZO) thin films sputter-deposited on LCD-grade glass substrate showed that the resistivity of an IZO film decreases markedly as the substrate temperature is increased from room-temperature to 120°C. This phenomenon can be attributed to the growth of In-Zn intermetallic compounds in the amorphous region as a result of annealing. The compound growth was observed by plan-view transmission electron microscopy.Although the transmittance and resistivity of IZO are inferior to those of indium-tin oxide, these disadvantages do not present any difficulties in the practical use of IZO for designing TFT-LCDs. Since IZO is an amorphous material, we propose a five-mask process with this characteristic.

Transmission electron microscopy study of the structure of radio frequency sputter-deposited yttria-stabilized zirconia thin films

2003 ◽  
Vol 18 (1) ◽  
pp. 195-200 ◽  
Author(s):  
David E. Ruddell ◽  
Brian R. Stoner ◽  
Jeffrey Y. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Cross Sectional ◽  
Plan View ◽  
Oxygen Levels ◽  
Transmission Electron ◽  
Sputter Deposited

Transmission electron microscopy (TEM) was used to investigate the structural properties of sputter-deposited yttria-stabilized zirconia (YSZ) thin films. YSZ films were deposited over a range of temperatures and background oxygen levels. Additionally, a multilayered structure was produced by cyclic application of a substrate bias. Plan-view TEM showed that temperature and oxygen levels did not have a significant effect on grain size but did alter the phases present in the thin films. Cross-sectional TEM showed the development of texture in the multilayer film, both within the individual layers and in the entire film.

Reactively sputtered WOxNy films

2000 ◽  
Vol 15 (11) ◽  
pp. 2437-2445 ◽  
Author(s):  
Y. G. Shen ◽  
Y. W. Mai
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Lattice Parameter ◽  
Grain Structure ◽  
Ex Situ ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited

A combined investigation of stress relaxation in WOxNy thin films sputter deposited on silicon wafers in an Ar–N2–O2 gas mixture by in situ substrate curvature measurements and of structural properties by ex situ x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy (TEM), electron energy loss spectroscopy, and transmission electron diffraction is reported. It was found that the W2N films deposited under oxygen-free conditions had a high compressive stress of 1.45 GPa. As the oxygen concentration was increased, the stress became smaller and reached almost zero for films near 10–15 at.% oxygen. These results can be understood in terms of the decrease in the lattice parameter caused by substituting nitrogen atoms with oxygen in the lattice sites and the development of an amorphous network in the WOxNy films as the incorporation of oxygen was increased. Plan view and cross-sectional TEM analyses showed that 150-nm-thick oxygen-free crystalline W2N films had a columnar microstructure with an average column width of 15–20 nm near the film surface, whereas oxygen imbedded in the films provided a finer grain structure. The effect of oxygen in stabilizing the W2N structure was also elucidated and explained on the basis of structural and thermodynamic stability.

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