scholarly journals The Application of Minimally Invasive Devices with Nanostructured Surface Functionalization: Antisticking Behavior on Devices and Liver Tissue Interface in Rat

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Li-Hsiang Lin ◽  
Ya-Ju Hsu ◽  
Hsi-Jen Chiang ◽  
Han-Yi Cheng ◽  
Che-Shun Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Injury ◽  
Cu Films ◽  
Transmission Electron ◽  
Temperature Transformation ◽  
Tissue Interface ◽  
Magnetic Resonance Imaging Mri ◽  
Cu Thin Film ◽  
Surface Morphologies ◽  
Homogeneous Temperature

This study investigated the thermal injury and adhesion property of a novel electrosurgery of liver using copper-doped diamond-like carbon (DLC-Cu) surface treatment. It is necessary to reduce the thermal damage of surrounding tissues for clinical electrosurgeries. The surface morphologies of stainless steel (SS) coated with DLC (DLC-Cu-SS) films were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Bionic liver models were reconstructed using magnetic resonance imaging (MRI) to simulate electrosurgery. Cell cytotoxicity assays showed that the DLC-Cu thin film was nontoxic. The temperature of tissue decreased significantly with use of the electrosurgical device with nanostructured DLC-Cu films and increased with increasing thickness of the films. Thermography revealed that the surgical temperature in the DLC-Cu-SS electrosurgical device was significantly lower than that in the untreated device in the animal model. Moreover, compared to the SS electrosurgical device, the DLC-Cu-SS electrosurgical device caused a relatively small injury area and lateral thermal effect. The results indicate that the DLC-Cu-SS electrosurgical device decreases excessive thermal injury and ensures homogeneous temperature transformation in the tissues.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

Effect of the Substrate Temperature on the Properties of SnO2 Thin Films Prepared by Ultrasonic Spray for Solar Cells Applications

2019 ◽  
Vol 59 ◽  
pp. 126-136
Author(s):  
Radia Kalai ◽  
Amara Otmani ◽  
Lakhdar Bechiri ◽  
Noureddine Benslim ◽  
Abdelaziz Amara ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Substrate Temperature ◽  
Optical Measurements ◽  
Force Microscopy ◽  
Ultrasonic Spray ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
High Absorption Coefficient ◽  
Surface Morphologies

Structural, optical and electrical properties of SnO2 thin films deposited by spray ultrasonic technique were investigated by varying substrate temperature. The structural characterization of the films was analyzed via X-ray diffraction (XRD) technique and transmission electron microscopy (TEM). Films surface morphologies were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Optical absorption spectrum was recorded using the UV–Vis spectroscopy and the films were found to be transparent. Optical measurements showed that the layers had a relatively high absorption coefficient of 105 cm−1. A shift in the absorption edge was observed and the films exhibited direct transitions with band gap energies ranging from 3.85 to 3.94 eV.

Morphology and Phase Metastability in the Al/Cu Thin Film Reaction.

1993 ◽  
Vol 311 ◽  
Author(s):  
E. D. McCarty ◽  
S. A. Hackney
Keyword(s):  
Average Diameter ◽  
Reaction Rates ◽  
Growth Interface ◽  
Plan View ◽  
Cu Films ◽  
High Reaction ◽  
Transmission Electron ◽  
Interdiffusion Process ◽  
Sputter Deposited ◽  
Cu Thin Film

ABSTRACTThe initial stages of the reaction between thin Al grains with an average diameter of 2 × 10−5mand sputter deposited, nanocrystalline Cu films has been studied in plan view using in situ transmission electron microscopy. At high reaction rates, the phase transformation in the Al grain resulting from the interdiffusion process is found to exhibit metastable growth morphologies characterized by negative curvature at the growth interface. The crystal structure of the initial phase formed in the Al grain under relatively high reaction rates is a metastable, orthorhombic distortion of the equilibrium body centered tetragonal θ phase. The distortion is found to vary with Al grain surface orientation. The degree of metastability can be experimentally correlated with the kinetics of the interdiffusion process as controlled by diffusion barrier thickness.

Microstructure of Al-Cu thin-film interconnect

1991 ◽  
Vol 49 ◽  
pp. 820-821
Author(s):  
J. H. Rose ◽  
J. R. Lloyd ◽  
A. Shepela ◽  
N. Riel
Keyword(s):  
Integrated Circuit ◽  
Present Contribution ◽  
Cu Films ◽  
Transmission Electron ◽  
History Of ◽  
Cu Interconnect ◽  
The Many ◽  
Cu Thin Film ◽  
Standard Life ◽  
Evolution Of Microstructure

The precipitate structure of bulk aluminum alloys was heavily studied with x-ray diffraction commencing in the 1930s and via direct observation with the development of transmission electron microscopy (TEM) techniques in the 1950s. In 1970, recognition of the electromigration performance benefits of Cu additions to Al interconnect in integrated circuit devices precipitated studies on Al-Cu thin films. However, the microstructure of these films remains only partially known, in part due to the many process and interconnect geometry variables. In particular, there has been minimal attempt to study films which mimic as closely as possible the environment and thermal history of real interconnect (prior studies typically have examined unpatterned or unpassivated films.) In the present work, Al-Cu films in standard life test devices have been studied. This work is directed at understanding the evolution of microstructure during device processing and life testing and application of this knowledge to a better understanding of the role of microstructure in electromigration in Al-Cu interconnect. The present contribution describes initial microstructural observations on a variety of annealed samples.

Development of Morphology Dependent Titania Nanomaterial for Photo Degradation of Dyes

2014 ◽  
Vol 625 ◽  
pp. 349-352
Author(s):  
Nor Hazwani Amir Hamzah ◽  
Sujan Chowdhury ◽  
Suriati Sufian ◽  
Abdul Aziz Omar ◽  
Abrar Inayat
Keyword(s):  
Electron Microscopy ◽  
Sem Analysis ◽  
Particle Sizes ◽  
X Ray Diffraction ◽  
Flower Structure ◽  
Photo Degradation ◽  
Photo Catalysis ◽  
Degradation Of Dyes ◽  
Transmission Electron ◽  
Surface Morphologies

Titania nanomaterial flower structure is synthesized through the ionothermal route and is used for the degradation of sulfan blue (SB) through the photo catalysis process. The ionic liquid used is 1-butyl-3-methypyridium dicyanamide ([Bmpm]DCN). The particle sizes and surface morphologies are characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Brunauer–Emmett–Teller (BET). Three types of titania have been compared for their degradation performance, namely commercial titania (TP), titania nanotube (TN), and titania flower (TF). The size of the particle is found to be approximately 33 nm from the FE–SEM analysis. The BET measures the highest surface area of 220 m2 g-1 and pore volume of 0.15 cm3 g-1 for the TF. The degradation of binary dye is more favorable in alkaline solution with pH 14 while varying the dosage of the commercial TiO2 from 0.025–0.2 g reveals an increase in the rate of degradation with optimum dosage is found to be 0.2 g. Results show that TF degradation rate is higher as compared to TP and TN.

UV-Durable Superhydrophobic Textiles with UV-Shielding Property by Coating Fibers with ZnO/SiO2 Core/Shell Particles

2012 ◽  
Vol 441 ◽  
pp. 351-355 ◽  
Author(s):  
Chao Hua Xue ◽  
Wei Yin ◽  
Shun Tian Jia ◽  
Jian Zhong Ma
Keyword(s):  
Electron Microscopy ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Core Shell ◽  
Uv Shielding ◽  
Transmission Electron ◽  
Blocking Property ◽  
Poly Ethylene ◽  
Shell Particles ◽  
Surface Morphologies

ZnO/SiO2 core/shell particles were fabricated and coated on poly (ethylene terephthalate) (PET) textiles, followed by hydrophobization with hexadecyltrimethoxysilane, to achieve superdrophobic surfaces with UV-shielding property. Transmission electron microscopy (TEM) was employed to reveal the fabrication of ZnO/SiO2 core/shell particles. Scanning electron microscopy (SEM) was conducted to investigate the surface morphologies of the textile and the coating of the fibers. UV-Vis spectrophotometry and contact angle measurement indicated that the incorporation of ZnO onto fibers imparted UV-blocking property to the textile surface, while the coating of SiO2 shell on ZnO made the superhydrophobicity of the as-treated PET textile surface UV-durable.

A Comparison of AFM, SEM, and TEM Analysis of AL/SI/CU Thin Films

1992 ◽  
Vol 260 ◽  
Author(s):  
K. L. Westra ◽  
D. J. Thomson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Finite Size ◽  
Sem Analysis ◽  
Tem Analysis ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Sputter Deposited

ABSTRACTAtomic Force microscopy, scanning electron microscopy, and transmission electron microscopy was used to study Al/Si/Cu films sputter deposited at 2 and 45 mTorr. AFM and SEM analysis shows the films to consist of columnar structures commonly seen in PVD deposited thin films, while the TEM analysis showed the films be polycrystalline. Comparing the columnar structures seen in the AFM and SEM study to the grains found in the TEM study, we conclude that the columns consist of single grains. Thus for these films AFM or SEM analysis can be used to determine the grain size. Finally, an AFM scan of a Al/Si/Cu deposited via was performed. The AFM image clearly shows the high resolution of the AFM, while it also illustrates the problems caused by the finite size of the AFM tip.

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