Two-step epitaxial growth of NbON (100) thin films on rutile-type TiO2 (101) substrates and reduction of residual carrier concentration by RF reactive sputtering

CrystEngComm ◽  
2019 ◽  
Vol 21 (23) ◽  
pp. 3552-3556 ◽  
Author(s):  
Ryosuke Kikuchi ◽  
Toru Nakamura ◽  
Yasushi Kaneko ◽  
Kazuhito Hato
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Reactive Sputtering ◽  
Epitaxial Films ◽  
Step Growth

Two-step growth makes it possible to grow NbON epitaxial films and minimize anion-related defects in the NbON films.

Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies

2006 ◽  
Vol 297 (1) ◽  
pp. 80-86 ◽  
Author(s):  
Hideto Yanagisawa ◽  
Satoko Shinkai ◽  
Katsutaka Sasaki ◽  
Junpei Sakurai ◽  
Yoshio Abe ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Reactive Sputtering ◽  
Si Substrate ◽  
Surface Morphologies

Novel epitaxial growth of barium titanate thin films by electrodeposition

2000 ◽  
Vol 15 (12) ◽  
pp. 2583-2586 ◽  
Author(s):  
Jun Tamaki ◽  
Gregory K. L. Goh ◽  
Fred F. Lange
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Counter Electrode ◽  
Epitaxial Films ◽  
Buffer Layers

Electrodeposition was used to grow epitaxially BaTiO3 thin films on SrTiO3 single-crystal substrates with La0.7Sr0.3MnO3 (LSMO) conducting buffer layers. The epitaxial films appeared to consist of very small (ø10 nm) particles. The film completely covered the substrate when the reaction was performed at temperatures between 60 and 90 °C with LSMO potentials of –0.5 to –1.0 V against a Pt counter-electrode. It appeared that an electrophoretic force, acting on BaTiO3 nuclei within the solution, facilitated the deposition of the film.

Epitaxial growth of Cu2O films on MgO by sputtering

1992 ◽  
Vol 7 (10) ◽  
pp. 2828-2832 ◽  
Author(s):  
Dean J. Miller ◽  
Jeffrey D. Hettinger ◽  
Ronald P. Chiarello ◽  
Hyung K. Kim
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Epitaxial Films ◽  
Epitaxial Thin Films ◽  
Continuous Film ◽  
Significant Interest ◽  
Deposition By Sputtering ◽  
Cu2o Films ◽  
Unique Potential

The epitaxial growth of Cu2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the growth mechanism in which islands coalesce to form a continuous film.

scholarly journals Low-Temperature Epitaxial Growth of AlN Thin Films on a Mo Electrode/Sapphire Substrate Using Reactive Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 443
Author(s):  
Jihong Kim
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Sapphire Substrate ◽  
Reactive Sputtering ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Si Substrate ◽  
Polycrystalline Structure

High-crystalline aluminum nitride (AlN) thin films are essential for device applications, and epitaxial growth is a promising approach to improve their crystalline quality. However, a high substrate temperature is usually required for the epitaxial growth, which is not compatible with the complementary metal-oxide-semiconductor (CMOS) process. Furthermore, it is very difficult to obtain epitaxial AlN thin films on the deposited metal layers that are sometimes necessary for the bottom electrodes. In this work, epitaxial AlN thin films were successfully prepared on a molybdenum (Mo) electrode/sapphire substrate using reactive sputtering at a low substrate temperature. The structural properties, including the out-of-plane and in-plane relationships between the AlN thin film and the substrate, were investigated using X-ray diffraction (XRD) 2θ-ω, rocking curve, and pole figure scans. Additional analyses using scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) were also carried out. It was shown that highly c-axis-oriented AlN thin films were grown epitaxially on the Mo/sapphire substrate with an in-plane relationship of AlN [112¯0]//sapphire [101¯0]. This epitaxial growth was attributed to the highly ordered and oriented Mo electrode layer grown on the sapphire substrate. In contrast, the AlN deposition on the Mo/SiO2/Si substrate under the same conditions caused poorly oriented films with a polycrystalline structure. There coexisted two different low-crystalline phases of Mo (110) and Mo (211) in the Mo layer on the SiO2/Si substrate, which led to the high mosaicity and polycrystalline structure of the AlN thin films.

Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool

2019 ◽  
Vol 963 ◽  
pp. 101-104 ◽  
Author(s):  
Yoshiaki Daigo ◽  
Akio Ishiguro ◽  
Shigeaki Ishii ◽  
Yoshikazu Moriyama ◽  
Kunihiko Suzuki ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Carrier Concentration ◽  
High Speed ◽  
Epitaxial Films ◽  
Short Term ◽  
Gas Nozzle ◽  
Sic Films ◽  
Growth Experiments ◽  
Nozzle Structure

N-type 4H-SiC homo-epitaxial films were grown by high speed wafer rotation vertical CVD tool, and both short term repeatability and long term repeatability of epitaxial growth were investigated. In the short term repeatability investigated by 6 epitaxial wafers chosen from successively grown 12 epitaxial wafers using same recipe, it was found that total variation of thickness and carrier concentration for all measurement points of 6 wafers is 1.44 and 4.64 % respectively, which indicates excellent repeatability as well as high uniform thickness and carrier concentration. In the long term repeatability investigated by a very large number of growth experiments, probability achieving target uniformity of thickness and carrier concentration of the SiC films was increased up to 1.32 times by optimizing gas nozzle structure in gas inlet compared with in the case of conventional gas nozzles. Moreover, adjustment range of C/Si ratio necessary to achieve target uniformity of thickness and carrier concentration of the films was considerably reduced to 22 % by optimized gas nozzles.

Epitaxial Growth of Pt(001) Thin Films on MgO(001) Under Oxidizing Conditions

1993 ◽  
Vol 310 ◽  
Author(s):  
G. Cui ◽  
P. C. Van Buskirk ◽  
J. Zhang ◽  
C. P. Beetz ◽  
J. Steinbeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Cross Section ◽  
Film Surface ◽  
Epitaxial Films ◽  
Grain Structure ◽  
Dc Magnetron Sputtering ◽  
Oriented Growth ◽  
Rocking Curve ◽  
Ferroelectric Capacitors

AbstractEpitaxial Pt(001) thin films have been grown on MgO(001) substrates using dc magnetron sputtering with an Ar/O2 mixture at 700°C. The width (FWHM) of the rocking curve of the Pt(002) peak is between 0.16° and 0.20°, which is only 0.05° wider than that of the MgO (002) peak of the cleaved substrate. The film surface roughness is about 1 nm (rms) for a 240 nm thick Pt film. No grain structure could be observed using SEM. In contrast, the films deposited at 700 °C with pure Ar, have both Pt(111) and Pt(001) oriented growth, as shown by XRD Θ - 2 Θ scans, with the Pt(111) peak having the largest intensity. BaTiO3 epitaxial films have also been deposited on Pt(001)/MgO(001). The width (FWHM) of the rocking curve of the BaTiO3(200) peak is 0.4°. The surface morphology of the epitaxial BaTiO3(100) thin films on Pt(001)/MgO(001) is featureless. XRD pole figure measurements on Pt/BaTiO3/Pt trilayer shown a very good in-plane alignment of all layers. The epitaxial growth relationship was also confirmed by TEM electron diffraction and cross-section imaging. The Pt/BaTiO3/Pt epitaxial trilayer could serve as a prototype for ferroelectric capacitors and may be able to improve the electrical properties of the capacitors.

Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source

2013 ◽  
Vol 740-742 ◽  
pp. 247-250 ◽  
Author(s):  
Hun Hee Lee ◽  
Han Seok Seo ◽  
Do Hyun Lee ◽  
Chang Hyun Kim ◽  
Hyun Woo Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Epitaxial Films ◽  
Cold Wall ◽  
Homoepitaxial Growth

Homoepitaxial 4H-SiC thin films were grown on (0 0 0 -1) C-face substrate by cold-wall chemical vapor deposition (CVD) using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor. Because of the polarity difference of C-face and (0 0 0 1) Si-face, epitaxial growth conditions of C-face was quite different from those of Si-face. To improve the quality of C-face epitaxial films, effects of epitaxial growth conditions on surface morphology and crystallinity of epitaxial films were investigated.

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Preparation of CdS Thin Films by Reactive Sputtering Method

Shinku ◽  
1974 ◽  
Vol 17 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Hiroharu HIRABAYASHI ◽  
Minoru NOGAMI
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Cds Thin Films
Sign in / Sign up

Export Citation Format

Share Document