Metallorganic Cheamcal Vapor Deposition (Mocvd) of Titanium-Based Ferroelectric Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Jie Si ◽  
Chien H. Peng
Keyword(s):  
Lead Zirconate Titanate ◽  
Vapor Deposition ◽  
Spontaneous Polarization ◽  
Coercive Field ◽  
Lead Titanate ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Transparent Films ◽  
Titanium Ethoxide

AbstractUsing hot-walled metallorganic chemical vapor deposition (MOCVD), thin fihns of lead zirconate titanate (PZT), lead titanate (PbTiO3 or PT) and bismuth titanate (Bi4Ti3O12 or BiT) were successfully prepared. For each material, titanium ethoxide (Ti(C2H5O)4) was used as the precursor for the titanium source, while lead bis-tetramethylheptadione (Pb(thd)2), zirconium tetrakistetramethylheptadione (Zr(thd)4) and triphenyl bismuth (Bi(C6H5)3) were used as sources for lead, zirconium and bismuth, respectively. Dense, specular and highly transparent films were obtained for all three materials. Deposition conditions are given for each of the materials as well as the properties of the resulting films as determined by XRD, SEM and UV-VIS-NIR spectrophotometry. Ferroelectric properties are also given for the PZT and BiT films; for PZT (%Zr = 41; %Ti = 9) annealed at 600 °C, the spontaneous polarization, Ps, was 23 μC/cm2 and the coercive field, Ec, was 65 kV/cm; for BiT annealed at 550 °C, the spontaneous polarization, Ps, was 27 μC/cm2 and the coercive field, Ec, was 240 kV/cm.

Organometallic Chemical Vapor Deposition of Lead Zirconate-Titanate Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
M. De Keuser ◽  
P.J. Van Veldhoven ◽  
G.J.M. Dorman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Lead Zirconate Titanate ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Titanium Tetra Isopropoxide ◽  
Processing Steps

AbstractIn this paper the growth of PbZrxTi1-xO3 on 10 cm platinized silicon wafers using the precursors cursors tetra-ethyl-lead, titanium-tetra-isopropoxide, or titanium-tetra-tertiarybutoxide and zirconium-tetra-tertiarybutoxide will be discussed in some detail. The composition of the films as a function of growth parameters will be treated and the accompanying change in the ferroelectric properties will be discussed. For device manufacturing, the PbZrxTi1-xO3 films are subjected to a number of processing steps. Some results for partially processed wafers will be presented. Also, preliminary results of depositions on 15 cm wafers will be given.

Preparation And Characterization Of Pzt Thin Films On Ruox/Pt Multilayered Electrode By Mocvd

1996 ◽  
Vol 446 ◽  
Author(s):  
Tae‐Young Kim ◽  
Daesig Km ◽  
Chee Won Chung ◽  
June Key Lee ◽  
Inyong Song
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Inductively Coupled Plasma ◽  
Ferroelectric Properties ◽  
Strong Dependence ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Organic Chemical ◽  
Substrate Thickness ◽  
Pzt Thin Films

AbstractFerroelectric lead zirconate titanate (PZT) thin films have been successfully prepared on a RuOx/Pt multilayered electrode by Metal Organic Chemical Vapor Deposition (MOCVD). The multilayered electrode was introduced to enhance device reliability for FRAM and DRAM applications. The variations in the microstructure and ferroelectric properties of the PZT thin films were investigated as a function of substrate thickness. The microstructure of the PZT thin films was found to have a strong dependence on the surface morphology of the substrate. The control of microstructure resulted in improved ferroelectric properties. The endurance of the Pt/RuOx/PZT/RuOx/Pt capacitor was also maintained up to 1010 cycles without any serious degradation. The ferroelectric capacitors on 4” wafer were integrated by using Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) system and the fully processed MOCVD PZT capacitors showed good ferroelectric properties (Vc=0.57V, ργ=22μC/cm2 respectively).

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