Triethyllead tert-butoxide, a new precursor for organometallic chemical vapor deposition of lead zirconate titanate thin films

1993 ◽  
Vol 5 (4) ◽  
pp. 448-451 ◽  
Author(s):  
G. J. M. Dormans ◽  
M. de Keijser ◽  
P. J. van Veldhoven ◽  
D. M. Frigo ◽  
J. E. Holewijn ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Lead Zirconate Titanate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Organometallic Chemical Vapor Deposition

Organometallic Chemical Vapor Deposition of Lead Zirconate-Titanate Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
M. De Keuser ◽  
P.J. Van Veldhoven ◽  
G.J.M. Dorman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Lead Zirconate Titanate ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Titanium Tetra Isopropoxide ◽  
Processing Steps

AbstractIn this paper the growth of PbZrxTi1-xO3 on 10 cm platinized silicon wafers using the precursors cursors tetra-ethyl-lead, titanium-tetra-isopropoxide, or titanium-tetra-tertiarybutoxide and zirconium-tetra-tertiarybutoxide will be discussed in some detail. The composition of the films as a function of growth parameters will be treated and the accompanying change in the ferroelectric properties will be discussed. For device manufacturing, the PbZrxTi1-xO3 films are subjected to a number of processing steps. Some results for partially processed wafers will be presented. Also, preliminary results of depositions on 15 cm wafers will be given.

High‐Tc Undoped and Pb‐Doped BI‐SR‐CA‐CU‐O thin Films Prepared by Organometallic Chemical Vapor Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
J. M. Zhang ◽  
H. O Marcy ◽  
L .M. Tonge ◽  
B. W. Wessels ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Tc ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractFilms of the high‐Tc undoped and Pb‐doped Bi‐Sr‐Ca‐Cu‐O (BSCCO) superconductors have been prepared by low pressure organometallic chemical vapor deposition (OMCVD) using the volatile metal‐organic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, and triphenyl bismuth. Factors which influence texture and morphology of the OMCVD‐derived films have been investigated, including the effects of annealing, doping, and substrates.

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