Organometallic Chemical Vapor Deposition of Lead Zirconate-Titanate Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
M. De Keuser ◽  
P.J. Van Veldhoven ◽  
G.J.M. Dorman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Lead Zirconate Titanate ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Titanium Tetra Isopropoxide ◽  
Processing Steps

AbstractIn this paper the growth of PbZrxTi1-xO3 on 10 cm platinized silicon wafers using the precursors cursors tetra-ethyl-lead, titanium-tetra-isopropoxide, or titanium-tetra-tertiarybutoxide and zirconium-tetra-tertiarybutoxide will be discussed in some detail. The composition of the films as a function of growth parameters will be treated and the accompanying change in the ferroelectric properties will be discussed. For device manufacturing, the PbZrxTi1-xO3 films are subjected to a number of processing steps. Some results for partially processed wafers will be presented. Also, preliminary results of depositions on 15 cm wafers will be given.

Metallorganic Cheamcal Vapor Deposition (Mocvd) of Titanium-Based Ferroelectric Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Jie Si ◽  
Chien H. Peng
Keyword(s):  
Lead Zirconate Titanate ◽  
Vapor Deposition ◽  
Spontaneous Polarization ◽  
Coercive Field ◽  
Lead Titanate ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Transparent Films ◽  
Titanium Ethoxide

AbstractUsing hot-walled metallorganic chemical vapor deposition (MOCVD), thin fihns of lead zirconate titanate (PZT), lead titanate (PbTiO3 or PT) and bismuth titanate (Bi4Ti3O12 or BiT) were successfully prepared. For each material, titanium ethoxide (Ti(C2H5O)4) was used as the precursor for the titanium source, while lead bis-tetramethylheptadione (Pb(thd)2), zirconium tetrakistetramethylheptadione (Zr(thd)4) and triphenyl bismuth (Bi(C6H5)3) were used as sources for lead, zirconium and bismuth, respectively. Dense, specular and highly transparent films were obtained for all three materials. Deposition conditions are given for each of the materials as well as the properties of the resulting films as determined by XRD, SEM and UV-VIS-NIR spectrophotometry. Ferroelectric properties are also given for the PZT and BiT films; for PZT (%Zr = 41; %Ti = 9) annealed at 600 °C, the spontaneous polarization, Ps, was 23 μC/cm2 and the coercive field, Ec, was 65 kV/cm; for BiT annealed at 550 °C, the spontaneous polarization, Ps, was 27 μC/cm2 and the coercive field, Ec, was 240 kV/cm.

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