On the Interface Properties and Deep Level Defects in Ta2O5 Grown on Si by Plasma Enhanced Liquid Source-Cvd

1993 ◽  
Vol 309 ◽  
Author(s):  
P.A. Murawala ◽  
N. Sawai ◽  
T. Tatsuta ◽  
O. Tsuji ◽  
Sz. Fujita ◽  
...  
Keyword(s):  
Deep Level ◽  
High Stress ◽  
Chemical Vapor ◽  
Interface State ◽  
Vital Role ◽  
Deep Levels ◽  
Flat Band ◽  
Interface Properties ◽  
Flat Band Voltage ◽  
Liquid Source

AbstractWe report, for the first time, on interface properties of the Ta2O5-Si system and on the deep level defects in Ta2O5 grown by plasma enhanced liquid source chemical vapor deposition (PE-LS-CVD) using Ta(OC2Hs)5. The capacitance voltage (C–V) measurement performed on Au/Ta2O5/n, p-Si MOS diodes resulted in very well defined C-V charactristics which compares well with the ideal C-V curve. The flat band voltage is as low as 0.15 V and the minimum density of the interface state is about 2.7 × 1011 cm−2 ev−1. In order to examine deep level defects in Ta2O5, we investigated variations of flat band voltage under application of high stress electric field (10MV/cm), by which hot carriers are injected in to deep levels. This charge transfer process results in increase of charges in Ta2O5 oxide which is attributed to the equivalent deep level defect densities, which is found to be of the order of 2 × 1011 cm−2 in the Ta2O5-Si system. These results strongly suggest low interface states and deep levels in the PE-LS-CVD grown Ta2O5-Si system, which may be brought about by low decomposed-carbon impurities in the film, confirmed by AES in our previous reports. These films can play a vital role as thin capacitors in I.C. technology.

Deep Level Centers in Carbon-Doped High Resistivity GaN

2014 ◽  
Vol 997 ◽  
pp. 492-495
Author(s):  
Huan Cui ◽  
Li Wu Lu ◽  
Ling Sang ◽  
Bai He Chen ◽  
Zhi Wei He ◽  
...  
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Hall Measurement ◽  
High Resistivity ◽  
Organic Chemical ◽  
Carbon Doped ◽  
Metal Organic ◽  
High Level ◽  
Organic Chemical Vapor Deposition

The deep levels of carbon doped high resistivity (HR) GaN samples grown by metal-organic chemical vapor deposition (MOCVD) has been investigated using thermally stimulated current (TSC) spectroscopy and high temperature (HT) Hall measurement. Two different thickness of 100 and 300 nm were used to be compared. It was found that four distinct deep levels by TSC and one deep level by HT Hall measurement were observed in both samples, which means great help for the decrease of leakage current and lifetime limitations of device utilizing the structure. The activation energy of these levels was calculated and their possible origins were also proposed. The low temperature traps, might be related to VN, 0.50 and 0.52eV related to incorporate a high level carbon, 0.57eV related to VGa, 0.59eV related to CGaor NGa, 0.91 and 0.97eV related to interstitial N1.

Electrical Performances of Low Temperature Annealed Hafnium Oxide Deposited at Room Temperature

2006 ◽  
Vol 514-516 ◽  
pp. 58-62 ◽  
Author(s):  
Luís Pereira ◽  
Pedro Barquinha ◽  
Elvira Fortunato ◽  
Rodrigo Martins
Keyword(s):  
Dielectric Constant ◽  
Charge Density ◽  
Hafnium Oxide ◽  
Room Temperature ◽  
Flat Band ◽  
Interface Properties ◽  
Flat Band Voltage ◽  
Fixed Charge Density ◽  
Gas Atmosphere ◽  
Deposited Film

In this work, HfO2 was deposited by r.f. sputtering at room temperature and then annealed for different times at 200°C in a forming gas atmosphere. After annealing for 2 hours the HfO2 layers present a reduction on the flat band voltage of about 1 V, relatively to the as deposited film, decreasing from -2.23V down to -1.28 V. This means an improvement of the interface properties and a reduction on the oxide charge density from 1.33×1012 cm-2 to 7.62×1011 cm-2. The dielectric constant reaches a maximum of 18.3 after 5h annealing due to film’s densification. When annealing for longer times such as 10h a small degradation of the electrical properties is observed. After 10h annealing the dielectric constant, flat band voltage and fixed charge density are respectively, 14.9, -2.96 V and 1.64 ×1012 cm-2 and the leakage current also increases due to film’s crystallization.

Very Low Deep Level AlxGa1−xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 378 ◽  
Author(s):  
Z. C. Huang ◽  
Bing Yang ◽  
H. K. Chen ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Se Doping ◽  
Transient Spectroscopy ◽  
Low Selenium ◽  
Metalorganic Chemical

ABSTRACTWe have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se)-doping (8.4 × l016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep level transient spectroscopy (DLTS). We have found that the commonly observed oxygen contamination-related deep levels at EC-0.53 and 0.70 eV and germanium-related level at EC-0.30 eV in MOCVD-grown Al0.22Ga0.78 As can be eliminated by low Se-doping. In addition, a deep hole level located at Ev+0.65 eV was found for the first time in highly Se-doped Al0.22Ga0.78 As epilayers. We suggest that low Se-doping (<2 × 1017 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As.

Low Deep Impurity InxGa1-xP Grown by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 378 ◽  
Author(s):  
Z. C. Huang ◽  
Bing Yang ◽  
H. K. Chen ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Electron Trap ◽  
Deep Impurity ◽  
Metalorganic Chemical

AbstractInxGai-xP (x=0.49) layers lattice-matched to GaAs have been grown by metalorganic chemical vapor deposition (MOCVD). We did not observe any deep levels in the temperature range of 30-380K by deep level transient spectroscopy (DLTS) in undoped In0.49Ga0.51P layers which have a background concentration of 3.1×1015 cm−3. The deep levels, if they exist, have a concentration of less than 5×1011 cm−3, which is the lowest deep level concentration found so far in InxGa1-xP materials. Moreover, lattice-mismatched InxGa1-xP/GaAs heterojunctions were deliberately grown by varying the In-composition ranging from 0.43 to 0.57. No deep levels were created in 1-μm-thick InxGa1-xP layers due to lattice mismatch when 0.469 < x < 0.532. However, we have observed a shallow electron trap at EC - 60 meV in InxGa1-xP layers with x < 469, and a deep electron trap located at Ec - 0.85 eV in the samples with x > 0.532. We suggest that the lattice-mismatch-induced-defects in InxGa1-xP are either electrically inactive or resided outside the bandgap when In content ranging from 0.469 to 0.532.

Preparation and Characterization of Low Temperature Silicon Dioxide Thin Films Using Tetramethylsilane (TMS) for Microfabrication Applications

2001 ◽  
Vol 685 ◽  
Author(s):  
Xin Lin ◽  
Stephen J. Fonash
Keyword(s):  
Low Temperature ◽  
Silicon Dioxide ◽  
Gas Flow ◽  
Oxide Films ◽  
Annealing Treatment ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Gas Dilution

AbstractLow temperature silicon dioxide depositions have been carried out by plasma enhanced chemical vapor deposition (PECVD) using TMS as the Si precursor at 100-200°C at the pressure of 2-8 Torr. An RF power of 40 W and a TMS:O2 gas flow rate ratio of 1:500 without inert gas dilution were used in the depositions. It was found that the current-voltage (I-V) characteristics of as-deposited oxide films improved as the substrate temperature increased or deposition pressure decreased. Oxide films deposited at 2-3 Torr exhibited typical Fowler-Nordheim (F-N) tunneling characteristics and breakdown voltages greater than 8 MV/cm. The best capacitance-voltage (C-V) characteristics, giving a small flat band voltage shift, a small amount of positive oxide charge, a small hysteresis in bi-directional C-V sweep, and a low interface trap density, were obtained at 3 Torr. Post-deposition annealing in forming gas at the deposition temperature was performed and proved to be an effective approach for improving the electrical properties of the deposited oxide films without compromising the low temperature aspect of the process. By annealing at 200°C, the F-N tunneling barrier height increased by as much as 0.6 eV, the flat-band voltage and the hysteresis in C-V sweep were reduced by 0.74 V and 0.08 V, respectively. In addition, hydrogen was found to play a key role in the annealing treatment and its mechanisms were discussed.

Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face

2008 ◽  
Vol 600-603 ◽  
pp. 597-602 ◽  
Author(s):  
Michael Grieb ◽  
Dethard Peters ◽  
Anton J. Bauer ◽  
Peter Friedrichs ◽  
Heiner Ryssel
Keyword(s):  
Interface State ◽  
Interface States ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Gate Oxides ◽  
Order Of Magnitude ◽  
State Densities ◽  
Density Of Interface States

The reliability of thermal oxides grown on n-type 4H-SiC C(000-1) face wafer has been investigated. In order to examine the influence of different oxidation atmospheres and temperatures on the reliability, metal-oxide-semiconductor capacitors were manufactured and the different oxides were characterized by C-V measurements and constant-current-stress. The N2O-oxides show the smallest flat band voltage shift compared to the ideal C-V curve and so the lowest number of effective oxide charges. They reveal also the lowest density of interface states in comparison to the other oxides grown on the C(000-1) face, but it is still higher than the best oxides on the Si(000-1) face. Higher oxidation temperatures result in smaller flat band voltage shifts and lower interface state densities. Time to breakdown measurements show that the charge-to-breakdown value of 63% cumulative failure for the N2O-oxide on the C(000-1) face is more than one order of magnitude higher than the highest values measured on the Si(000-1) face. Therefore it can be concluded that a smaller density of interface states results in a higher reliability of the oxide.

The Characteristics of Silicon Dioxide Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at 150°C

2003 ◽  
Vol 769 ◽  
Author(s):  
Su-hyuk Kang ◽  
Min-Cheol Lee ◽  
Kook-Chul Moon ◽  
Min-koo Han
Keyword(s):  
Silicon Dioxide ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Plasma Chemical ◽  
Silicon Dioxide Film ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Dioxide Film

AbstractAn ultra-low temperature processed silicon dioxide film has been fabricated by inductively coupled plasma chemical vapor deposition at 150°C using He/N2O/SiH4 mixture. The deposited silicon dioxide film exhibits a high breakdown field larger than 6MV/cm in case of high ICP plasma condition while the flat band voltage of the oxide film significantly shifted in the negative direction with increasing ICP power. In order to obtain both high electrical breakdown filed and the low flat-band voltage, excimer laser irradiation with the energy density of 430mJ/cm2 is employed. The oxide film irradiated by excimer laser exhibited considerably shifted in the positive direction without scarifying the breakdown characteristics.

Activation of Implanted Poly Gates by Short Cycle Time Annealing

2000 ◽  
Vol 610 ◽  
Author(s):  
A. T. Fiory ◽  
K. K. Bourdelle
Keyword(s):  
Chemical Vapor ◽  
Maximum Temperature ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Thermal Oxide ◽  
Van Der Pauw ◽  
P Type ◽  
Temperature Time ◽  
And Diffusion ◽  
Secondary Ion

AbstractAmorphous silicon films with B, P, and As implants were activated with thermal anneals that include spiking to the maximum temperature. Films were grown over thermal oxide by chemical vapor deposition as two separately implanted 50-nm layers for manipulating dopant placement and diffusion. Electrical activation was determined by Hall van der Pauw and MOS C-V, and dopant diffusion was profiled by secondary ion mass spectroscopy (SIMS). Flat-band voltage was used to benchmark relative thermal budgets for p-type poly. Temperature-time relationships are used to deduce effective activation energies.

Deep Levels in Multilayer Structures of Si/Si0.8Ge0.2 Grown by Low-Pressure Chemical Vapor Deposition

2003 ◽  
Vol 799 ◽  
Author(s):  
Yutaka Tokuda ◽  
Kenichi Shirai
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Deep Levels ◽  
Multilayer Structures ◽  
Pressure Chemical ◽  
Transient Spectroscopy ◽  
A Minor

ABSTRACTDeep levels in multilayer structures of ten periods Si/Si0.8Ge0.2 (16/5 nm) grown by low-pressure chemical vapor deposition have been characterized by deep level transient spectroscopy (DLTS). DLTS measurements reveal one dominant peak (E1) at around 130 K with a minor peak (E2) at around 240 K. The dominant trap E1 (Ec – 0.19 eV) is ascribed to the dislocation-related defect. The increase of the E1 concentration by a factor of 2 to 3 and the change of its energy level to Ec – 0.22 eV are observed with annealing up to 120°C. It is speculated that hydrogen incorporated during growth associates with E1 and the behavior of E1 upon annealing is caused by the release of hydrogen from E1.

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